International Rectifier ST380CH04C2L, ST380CH04C2, ST380CH04C1L, ST380CH04C1, ST380CH04C0L Datasheet
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DISCRETE POWER DIODES and THYRISTORS
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D-374
Bulletin I25169/B
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ST380CH..C SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
Low profile hockey-puk to increase current-carrying capability
Extended temperature range
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
960A
Major Ratings and Characteristics
Parameters ST380CH..C Units
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
2
I
t @ 50Hz 782 KA2s
V
DRM/VRRM
t
q
T
J
@ 50Hz 12500 A
@ 60Hz 13000 A
@ 60Hz 713 KA
typical 100 µs
960 A
80 °C
2220 A
25 °C
400 to 600 V
- 40 to 150 °C
case style TO-200AB (E-PUK)
2
s
D-375
ST380CH..C Series
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage repetitive peak voltage
ST380CH..C 100
04 400 500
06 600 700
On-state Conduction
Parameter ST380CH..C Units Conditions
I
Max. average on-state current 960 (440) A 180° conduction, half sine wave
T(AV)
@ Heatsink temperature 80 (110) °C double side (single side) cooled
I
Max. RMS on-state current 2220 DC @ 25°C heatsink temperature double side cooled
T(RMS)
I
Max. peak, one-cycle 12500 t = 10ms No voltage
TSM
non-repetitive surge current 13000 A t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 782 t = 10ms No voltage Initial TJ = TJ max.
2
I
√t Maximum I2√t for fusing 7820 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
Low level value of threshold
T(TO)
1
voltage
V
High level value of threshold
T(TO)
2
voltage
r
Low level value of on-state
t1
slope resistance
r
High level value of on-state
t2
slope resistance
V
Max. on-state voltage 1.58 V Ipk= 2900A, TJ = TJ max, tp = 10ms sine pulse
TM
I
Maximum holding current 600
H
I
Typical latching current 1000
L
, max. repetitive V
, maximum non- I
RSM
DRM/IRRM
@ TJ = TJ max
V V mA
10500 t = 10ms 100% V
11000 t = 8.3ms reapplied Sinusoidal half wave,
713 t = 8.3ms reapplied
553 t = 10ms 100% V
KA2s
505 t = 8.3ms reapplied
0.85 (16.7% x π x I
V
0.88 (π x I
< I < 20 x π x I
T(AV)
0.25 (16.7% x π x I
mΩ
0.24 (π x I
< I < 20 x π x I
T(AV)
T(AV)
T(AV)
RRM
RRM
< I < π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
T(AV)
),TJ = TJ max.
), TJ = TJ max.
T(AV)
),TJ = TJ max.
2222222222222
mA TJ = 25°C, anode supply 12V resistive load
max.
12
Switching
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, t
t
d
t
q
Parameter ST380CH..C Units Conditions
of turned-on current T
1000 A/µs
Typical delay time 1.0
Typical turn-off time 100
= TJ max, anode voltage ≤ 80% V
J
Gate current 1A, dig/dt = 1A/µs
= 0.67% V
V
d
µs
= 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
I
TM
= 20V/µs, Gate 0V 100Ω, tp = 500µs
dv/dt
D-376
DRM, TJ
≤ 1µs
r
= 25°C
DRM
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