International Rectifier ST330C16C0L, ST330C16C0, ST330C16C3L, ST330C16C3, ST330C16C2L Datasheet
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D-358
Bulletin I25155/B
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ST330C..C SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters ST330C..C Units
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
2
I
t @ 50Hz 405 KA2s
@ 50Hz 9000 A
@ 60Hz 9420 A
@ 60Hz 370 KA
720 A
55 °C
1420 A
25 °C
720A
case style TO-200AB (E-PUK)
2
s
V
DRM/VRRM
t
q
T
J
400 to 1600 V
typical 100 µs
- 40 to 125 °C
D-359
ST330C..C Series
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage repetitive peak voltage
04 400 500
08 800 900
ST330C..C 12 1200 1300 50
14 1400 1500
16 1600 1700
On-state Conduction
Parameter ST330C..C Units Conditions
I
Max. average on-state current 720 (350) A 180° conduction, half sine wave
T(AV)
@ Heatsink temperature 55 (75) °C double side (single side) cooled
I
Max. RMS on-state current 1420 DC @ 25°C heatsink temperature double side cooled
T(RMS)
I
Max. peak, one-cycle 9000 t = 10ms No voltage
TSM
non-repetitive surge current 9420 A t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 405 t = 10ms No voltage Initial TJ = TJ max.
2
I
√t Maximum I2√t for fusing 4050 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
Low level value of threshold
T(TO)
1
voltage
V
High level value of threshold
T(TO)
2
voltage
r
Low level value of on-state
t1
slope resistance
r
High level value of on-state
t2
slope resistance
V
Max. on-state voltage 1.96 V Ipk= 1810A, TJ = TJ max, tp = 10ms sine pulse
TM
I
Maximum holding current 600
H
I
Typical latching current 1000
L
, max. repetitive V
, maximum non- I
RSM
DRM/IRRM
@ TJ = TJ max
V V mA
7570 t = 10ms 100% V
7920 t = 8.3ms reapplied Sinusoidal half wave,
370 t = 8.3ms reapplied
287 t = 10ms 100% V
KA2s
262 t = 8.3ms reapplied
0.91 (16.7% x π x I
V
0.92 (I > π x I
T(AV)
0.58 (16.7% x π x I
mΩ
0.57 (I > π x I
mA
T(AV)
T
= 25°C, anode supply 12V resistive load
J
RRM
RRM
< I < π x I
T(AV)
),TJ = TJ max.
< I < π x I
T(AV)
),TJ = TJ max.
), TJ = TJ max.
T(AV)
), TJ = TJ max.
T(AV)
2222222222222
max.
12
Switching
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
t
d
t
q
Parameter ST330C..C Units Conditions
of turned-on current T
1000 A/µs
Typical delay time 1.0
Typical turn-off time 100
= TJ max, anode voltage ≤ 80% V
J
Gate current 1A, dig/dt = 1A/µs
= 0.67% V
V
d
µs
= 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
I
TM
= 20V/µs, Gate 0V 100Ω, tp = 500µs
dv/dt
D-360
DRM, TJ
DRM
= 25°C
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