ST3230C..R Series
2222222222222
12
D-426
Voltage V
DRM/VRRM
, max. repetitive V
RSM
, maximum non- I
DRM/IRRM
max.
Type number Code peak and off-state voltage repetitive peak voltage
@ TC = 125°C
V V mA
10 1000 1100
12 1200 1300
14 1400 1500
16 1600 1700
18 1800 1900
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
T(AV)
Max. average on-state current 2785 (1720) A
@ Case temperature 80 °C
I
T(AV)
Max. average on-state current 3360 (1360) A
@ Heatsink temperature 55 (85) °C
I
T(RMS)
Max. RMS on-state current 5970 A DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle No voltage
non-repetitive surge current reapplied
50% V
RRM
reapplied Sinusoidal half wave,
I
2
t Maximum I2t for fusing No voltage Initial TC = 125°C
reapplied
50% V
RRM
reapplied
V
T(TO)
Max. value of threshold voltage 0.92 V TJ = TJ max.
r
t
Max. value of on-state slope
resistance
V
TM
Max. on-state voltage 1.3 V Ipk= 2900A, TC = 25°C
I
L
Typical latching current 300 mA TJ = 25°C, VD = 5V
Parameter ST3230C..R Units Conditions
On-state Conduction
A
KA2s
0.09 TJ = TJ max.
mΩ
180° conduction, half sine wave
double side (single side [anode side]) cooled
Parameter ST3230C..R Units Conditions
di/dt Max. repetitive 50Hz (no repetitive) From 67% V
DRM
to 1000A gate drive 10V, 5Ω, tr = 0.5µs
rate of rise of turned-on current to 1A, T
J
= TJ max.
Gate drive 30V, 15Ω,
Vd = 67% V
DRM, TJ
= 25°C
Rise time 0.5µs
I
T
= 1000A, tp = 1ms, TJ = TJ max, V
RM
= 50V,
dI
RR
/dt = 2A/µs, V
DR =
67% V
DRM, dvDR
/dt = 8V/µs linear
150 (300) A/µs
µs
t
q
Typical turn-off time 500
t
d
Maximum delay time 4.5
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
61200
64000
49000
51300
18730
17000
12000
10920
ST3230C..R 250
Switching