ST2600C..R Series
2222222222222
12
D-420
Voltage V
DRM/VRRM
, max. repetitive V
RSM
, maximum non- I
DRM/IRRM
max.
Type number Code peak and off-state voltage repetitive peak voltage
@ TC = 125°C
V V mA
20 2000 2100
22 2200 2300
24 2400 2500
26 2600 2700
28 2800 2900
30 3000 3100
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameter ST2600C..R Units Conditions
Switching
di/dt Max. repetitive 50Hz (no repetitive) From 67% V
DRM
gate drive 20V, 20Ω, tr = 1µs
rate of rise of turned-on current T
J
= TJ max.
Gate drive 30V, 15Ω,
Vd = 67% V
DRM, TJ
= 25°C
Rise time 0.5µs
I
T
= 800A, tp = 1ms, TJ = TJ max, V
RM
= 50V,
dI
RR
/dt = 20A/µs, V
DR =
67% V
DRM,
dV/dt = 20V/µs linear
150 (300) A/µs
µs
t
q
Typical turn-off time 400
t
d
Maximum delay time 2.0
I
T(AV)
Max. average on-state current 2220 (1440) A
@ Case temperature 80 °C
I
T(AV)
Max. average on-state current 2630 (1160) A
@ Heatsink temperature 55 (85) °C
I
T(RMS)
Max. RMS on-state current 4800 A DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle No voltage
non-repetitive surge current reapplied
50% V
RRM
reapplied Sinusoidal half wave,
I
2
t Maximum I2t for fusing No voltage Initial TC = 125°C
reapplied
50% V
RRM
reapplied
V
T(TO)
Max. value of threshold voltage 0.89 V TJ = TJ max.
r
t
Max. value of on-state slope
resistance
V
TM
Max. on-state voltage 1.45 V Ipk= 2900A, TC = 25°C
I
L
Max. (typical) latching current 300 (100) mA TJ = 25°C, VD = 5V
Parameter ST2600C..R Units Conditions
On-state Conduction
A
KA2s
mΩ
180° conduction, half sine wave
double side (single side [anode side]) cooled
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
46000
48200
36800
38500
10580
9640
6770
6150
ST2600C..R 250
0.19 T
J
= TJ max.