International Rectifier SD600N25PSC, SD600N25PTC, SD600N28MC, SD600N28MSC, SD600N28MTC Datasheet
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Typical Applications
Converters
Power supplies
Machine tool controls
High power drives
Medium traction applications
Parameters Units
SD600N/R
04 to 20 25 to 32
I
F(AV)
600 600 A
@ T
C
92 54 °C
I
F(RMS)
940 940 A
I
FSM
@ 50Hz 13000 10500 A
@ 60Hz 13600 11000 A
I2t@
50Hz 845 551 K A2s
@ 60Hz 772 503 K A2s
V
RRM
range 400 t o 2000 2500 to 3200 V
T
J
- 40 to 180 - 40 to 150 °C
Major Ratings and Characteristics
case style
B-8
SD600N/R SERIES
STANDARD RECOVERY DIODES
600A
Stud V ersion
Bulletin I2070/B
Features
Wide current range
High voltage ratings up to 3200V
High surge current capabilities
Stud cathode and stud anode version
Standard JEDEC types
SD600N/R Series
SD600N/R 35
Voltage V
RRM
, maximum repetitive V
RSM
, maximum non- I
RRM
max.
Type number Cod e peak reverse voltage repetitive peak rev. voltage @ T
J
= TJ max.
VVmA
04 400 500
08 800 900
12 1200 1300
16 1600 1700
20 2000 2100
25 2500 2600
28 2800 2900
32 3200 3300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
F(AV)
Max. average forward current 600 600 A 180° conduction, half sine wave
@ Case temperature 92 54 °C
I
F(AV)
Max. average forward current 570 375 A 180° conduction, half sine wave
@ Case temperature 100 100 °C
I
F(RMS)
Max. RMS forward current 940 940 A DC @ TC = 75°C (04 to 20), TC = 36°C (25 to 32)
I
FSM
Max. peak, one-cycle forward, 13000 10500 t = 10ms No voltage
non-repetitive surge current 13600 11000 t = 8.3ms reapplied
10900 8830 t = 10ms 100% V
RRM
11450 9250 t = 8.3ms reapplied Sinusoidal half wave,
I
2
t Maximum I2t for fusing 845 551 t = 10ms No voltage Initial TJ = TJ max.
772 503 t = 8.3ms reapplied
598 390 t = 10ms 100% V
RRM
546 356 t = 8.3ms reapplied
I
2
√t Maximum I2√t for fusing 8450 5510 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level value of threshold
voltage
V
F(TO)2
High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop 1.31 1.44 V Ipk= 1500A, TJ = TJ max, tp = 10ms sinusoidal wave
SD600N/R
04 to 20 25 to 32
Parameter Units Conditions
0.31 0.38 (I > π x I
F(AV)
),TJ = TJ max.
0.35 0.40 (16.7% x π x I
F(AV)
< I < π x I
F(AV)
), TJ = TJ max.
mΩ
0.87 0.88 (I > π x I
F(AV)
),TJ = TJ max.
0.78 0.84 (16.7% x π x I
F(AV)
< I < π x I
F(AV)
), TJ = TJ max.
V
KA2s
A
Forward Conduction
SD600N/R Series
Parameter U n i ts Conditions
SD600N/R
04 to 20 25 to 32
T
J
Max. junction operating temperature range -40 to 180 -40 to 150
T
stg
Max. storage temperature range -55 to 200 -55 to 200
R
thJC
Max. thermal resistance, junction to case 0.1 DC operation
R
thCS
Max. thermal resistance, case Mounting surface, smooth, flat and
to heatsink greased
T Max. allowed mounting torque ±10% 50 Nm Not lubricated threads
wt Approximate weight 454 g
Case style B - 8 See Outline Table
°C
0.04
K/W
Thermal and Mechanical Specifications
180° 0.012 0.008 TJ = TJ max.
120° 0.014 0.014
90° 0.017 0.019
60° 0.025 0.026
30° 0.042 0.042
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
K/W
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Ordering Information Table
1 2
3
4 5
6
Device Code
SD 60 0 N 32 P S C
8
7
1 - Diode
2 - Essential part number
3 - 0 = Standard recovery
4 - N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5 - Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
6 - P = Stud base B-8 3/4" 16UNF-2A
M = Stud base B-8 M24 X 1.5
7 - S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
T = Threaded Top Terminal 3/8" 24UNF-2A
None = Non isolated lead
8 - C = Ceramic Housing
NOTE: Available for rotating applications (Contact factory)
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