International Rectifier SD553C30S50L, SD553C36S50L, SD553C40S50L, SD553C45S50L Datasheet
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D-678
Bulletin I2092/B
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SD553C..S50L SERIES
FAST RECOVERY DIODES
Features
High power FAST recovery diode series
6.0 µs recovery time
High voltage ratings up to 4500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC DO-200AB (B-PUK)
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters SD553C..S50L Units
I
F(AV)
@ T
hs
I
F(RMS)
@ T
hs
I
FSM
2
I
t @ 50Hz 721 KA2s
@ 50Hz 12000 A
@ 60Hz 12570 A
@ 60Hz 658 KA
560 A
55 °C
1120 A
25 °C
Hockey Puk Version
560A
case style DO-200AB (B-PUK)
2
s
V
RRM
t
rr
T
J
range 3000 to 4500 V
6.0 µs
@ T
J
125 °C
- 40 to 125 °C
D-679
SD553C..S50L Series
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
Type number Code peak reverse voltage repetitive peak rev. voltage
30 3000 3100
SD553C..S50L
36 3600 3700
40 4000 4100
45 4500 4600
Forward Conduction
Parameter SD553C..S50L Units Conditions
Max. average forward current 560 (210) A 180° conduction, half sine wave
I
F(AV)
@ Heatsink temperature 55 (85) °C Double side (single side) cooled
I
Max. RMS forward current 1120 A @ 25°C heatsink temperature double side cooled
F(RMS)
I
Max. peak, one-cycle forward, 12000 t = 10ms No voltage
FSM
non-repetitive surge current 12570 t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 721 t = 10ms No voltage Initial TJ = TJ max.
2
I
√t Maximum I2√t for fusing 7210 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
Low level value of threshold
F(TO)1
voltage
V
High level value of threshold
F(TO)2
voltage
r
Low level value of forward
1
f
slope resistance
r
High level value of forward
2
f
slope resistance
V
Max. forward voltage drop 3.24 V Ipk= 1500A, TJ = 125°C, tp = 10ms sinusoidal wave
FM
, maximum repetitive V
RRM
V V mA
10100 t = 10ms 50% V
10570 t = 8.3ms reapplied Sinusoidal half wave,
658 t = 8.3ms reapplied
510 t = 10ms 50% V
466 t = 8.3ms reapplied
1.77 (16.7% x π x I
1.95 (I > π x I
0.98 (16.7% x π x I
0.89 (I > π x I
A
KA2s
V
mΩ
, maximum non- I
RSM
RRM
RRM
< I < π x I
F(AV)
),TJ = TJ max.
F(AV)
F(AV)
),TJ = TJ max.
F(AV)
< I < π x I
F(AV)
), TJ = TJ max.
), TJ = TJ max.
F(AV)
@ TJ = 125°C
RRM
max.
75
Recovery Characteristics
Code
S50 5.0 1000 100 - 50 6.0 900 250
T
= 25 oC
J
Typical t
@ 25% I
rr
RRM
Test conditions Max. values @ T
I
pk
Square Pulse @ 25% I
di/dt V
r
t
rr
RRM
(µs) (A) (A/µs) (V) (µs) (µC) (A)
D-680
= 125 °C
J
QrrI
rr
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