International Rectifier SD263C30S50L, SD263C36S50L, SD263C40S50L Datasheet
DISCRETE POWER DIODES and THYRISTORS
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D-670
Bulletin I2071/A
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SD263C..S50L SERIES
FAST RECOVERY DIODES
Features
High power FAST recovery diode series
4.5 µs recovery time
High voltage ratings up to 4500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC DO-200AB (B-PUK)
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters SD263C..S50L Units
I
F(AV)
I
F(RMS)
I
FSM
@ T
hs
@ 50Hz 5500 A
@ 60Hz 5760 A
375 A
55 °C
408 A
Hockey Puk Version
375A
case style DO-200AB (B-PUK)
V
range 3000 to 4500 V
RRM
t
rr
T
J
@ T
4.5 µs
J
125 °C
- 40 to 125 °C
D-671
SD263C..S50L Series
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
Type number Code peak reverse voltage repetitive peak rev. voltage
30 3000 3100
SD263C..S50L 50
36 3600 3700
40 4000 4100
45 4500 4600
Forward Conduction
Parameter SD263C..S50L Units Conditions
I
Max. average forward current 375 (150) A 180° conduction, half sine wave
F(AV)
@ Heatsink temperature 55 (85) °C Double side (single side) cooled
I
Max. RMS forward current 725 A @ 25°C heatsink temperature double side cooled
F(RMS)
I
Max. peak, one-cycle forward, 5500 t = 10ms No voltage
FSM
non-repetitive surge current 5760 t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 151 t = 10ms No voltage Initial TJ = TJ max.
2
I
√t Maximum I2√t for fusing 1510 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
Low level value of threshold
F(TO)1
voltage
V
High level value of threshold
F(TO)2
voltage
r
Low level value of forward
1
f
slope resistance
r
High level value of forward
2
f
slope resistance
V
Max. forward voltage drop 3.20 V Ipk= 1000A, TJ = TJ max, tp = 10ms sinusoidal wave
FM
, maximum repetitive V
RRM
V V mA
4630 t = 10ms 50% V
4850 t = 8.3ms reapplied Sinusoidal half wave,
138 t = 8.3ms reapplied
107 t = 10ms 50% V
98 t = 8.3ms reapplied
1.56 (16.7% x π x I
1.71 (I > π x I
1.64 (16.7% x π x I
1.53 (I > π x I
A
KA2s
V
mΩ
, maximum non- I
RSM
RRM
RRM
< I < π x I
F(AV)
),TJ = TJ max.
F(AV)
F(AV)
),TJ = TJ max.
F(AV)
< I < π x I
F(AV)
@ TJ = TJ max.
), TJ = TJ max.
), TJ = TJ max.
F(AV)
RRM
max.
Recovery Characteristics
Code
S50 5.0 1000 100 - 50 4.5 680 240
(*) di/dt = 25A/us @ TJ = 25°C
T
= 25 oC
J
typical t
@ 25% I
rr
RRM
Test conditions Max. values @ T
I
di/dt (*) V
pk
Square Pulse @ 25% I
r
t
rr
RRM
(µs) (A) (A/µs) (V) (µs) (µC) (A)
D-672
= 125 °C
J
QrrI
rr
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