International Rectifier SD153N04S10MBV, SD153N04S10MSV, SD153N04S10PBV, SD153N04S10PSV, SD153N04S10PV Datasheet
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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
150A
FAST RECOVERY DIODES Stud Version
SD153N/R SERIES
Bulletin I2063/A
Features
High power FAST recovery diode series
1.0 to 1.5 µs recovery time
High voltage ratings up to 1600V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version JEDEC DO-30
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
I
F(AV)
150 A
@ T
C
85 °C
I
F(RMS)
235 A
I
FSM
@ 50Hz 4280 A
@ 60Hz 4480 A
I
2
t @ 50Hz 92 KA2s
@ 60Hz 84 KA
2
s
V
RRM
range 400 to 1600 V
t
rr
range 1.0 to 1.5 µs
@ T
J
25 °C
T
J
- 40 to 125 °C
Parameters SD153N/R Units
Major Ratings and Characteristics
case style
DO-205AC (DO-30)
SD153N/R Series
2222222222222
12
Code
(µs) (A) (A/µs) (V) (µs) (µC) (A)
Test conditions Max. values @ T
J
= 125 °C
Recovery Characteristics
typical t
rr
I
pk
di/dt V
r
t
rr
Q
rr
I
rr
@ 25% I
RRM
Square Pulse @ 25% I
RRM
T
J
= 25 oC
350 25 - 30
S10 1.0 1.6 21 27
S15 1.5 2.3 61 37
Voltage V
RRM
max. repetitive V
RSM
, maximum non- I
RRM
max.
Type number Code peak and off-state voltage repetitive peak voltage T
J
= 125°C
V V mA
04 400 500
SD153N/R..S10 08 800 900
10 1000 1100
12 1200 1300
SD153N/R..S15 14 1400 1500
16 1600 1700
ELECTRICAL SPECIFICATIONS
Voltage Ratings
35
I
F(AV)
Max. average forward current 150 A 180° conduction, half sine wave.
@ Case temperature 85 °C
I
F(RMS)
Max. RMS current 235 A DC @ 74°C case temperature
I
FSM
Max. peak, one-cycle 4280 t = 10ms No voltage
non-repetitive forward current 4480 t = 8.3ms reapplied
3600 t = 10ms 100% V
RRM
3770 t = 8.3ms reapplied Sinusoidal half wave,
I
2
t Maximum I2t for fusing 92 t = 10ms No voltage Initial TJ = TJ max.
84 t = 8.3ms reapplied
65 t = 10ms 100% V
RRM
59 t = 8.3ms reapplied
I
2
√t Maximum I2√t for fusing 916 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level of threshold voltage 1.00 (16.7% x π x I
F(AV)
< I < π x I
F(AV)
), TJ = TJ max.
V
F(TO)
2
High level of threshold voltage 1.46 (I > π x I
F(AV)
), TJ = TJ max.
r
f1
Low level of forward slope resistance 1.35 (16.7% x π x I
F(AV)
< I < π x I
F(AV)
), TJ = TJ max.
r
f2
High level of forward slope resistance 0.52 (I > π x I
F(AV)
), TJ = TJ max.
V
FM
Max. forward voltage 1.55 V Ipk= 470 A, TJ = 25°C, tp = 400 µs square pulse
Parameter SD153N/R Units Conditions
Forward Conduction
KA2s
A
mΩ
V
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