International Rectifier PVO402P, PVO402P-T Datasheet
Data Sheet No. 1.036B
PVO402P
Microelectronic
Power IC Relay
Dual Pole, Normally Open + Ring Detector
0-400V, 120mA AC/DC
HEXFET® POWER MOSFET PHOTOVOLTAIC RELAY
(HEXFET is the registered trademark for International Rectifier Power MOSFETs)
General Description
The PVO402P Photovoltaic Relay is a dual-pole,
normally open solid-state relay plus ring detector. By integrating these two functions in one
package it can replace two discrete components,
i.e., a relay and an AC-input opto-coupler. The
relay portion of PVO402P utilizes International
Rectifier’s HEXFET power MOSFET as the output switch, driven by an integrated circuit
photovoltaic generator of novel construction. The
output switch is controlled by radiation from a
GaAlAs light emitting diode (LED) which is optically isolated from the photovoltaic generator.
The ring detector portion of PVO402P has two
LEDs in inverse parallel connection as the input
sensing element and a silicon NPN photo-transistor as the output switch.
PVO402P is ideally suited for PCMCIA fax/modem cards. Its extremely low profile allows it to
be used in Type II cards whose outer shells are
only 5mm thick.
PVO402P Relays are packaged in an 8-pin,
molded ‘Thin-Pak’ DIP package with ‘gull-wing’
surface mount terminals. It is available in plastic
shipping tubes or on tape-and-reel. Please refer
to Part Identification (opposite) for details.
Applications
On/Off Hook switch
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Dial pulsing
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Ringer injection
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Ring detection
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Loop current detection
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PVO402P Features
HEXFET Power MOSFET output
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Bounce-free operation
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3,750 V
RMS
I/O isolation
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Linear AC/DC operation
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Solid-State reliability
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UL recognized
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Part Identification
PVO402P SMT, plastic shipping tube
PVO402P-T SMT, T&R
PVO402P
‘Thin-Pak’
GENERAL CHARACTERISTICS Limits Units
Min. Dielectric Strength, Input-Output 3750 V
RMS
Min. Dielectric Strength, Relay-Detector 1000 V
DC
Min. Insulation Resistance, Input-Output
@TA=+25°C, 50%RH, 100V
DC
10
12
Ω
Max. Capacitance, Input-Output 3.0 pF
Max. Pin Soldering T emperature (10 seconds max.) +260
Ambient T emperature Range: Operating -40 to +85 °C
Storage -40 to +100
PVO402P
Electrical Specifications (-40°C ≤ TA ≤ +85°C unless otherwise specified)
INPUT CHARACTERISTICS Limits Units
Min. Control Current @ IC = 2mA, VCE = 0.5V 6.0 mA
Max. Control Current for Off-State Leakage IC=1µA, VCE=5V @TA=+25°C5 µA
Control Current Range (Caution: current limit input LED, see Fig.6) 6.0 to 25 mA
DETECTOR
INPUT CHARACTERISTICS Limits Units
Min. Control Current (See Fig.1) 3.0 mA
Max. Control Current for Off-State Resistance @TA=+25°C 0.4 mA
Control Current Range (Caution: current limit input LED, see Fig.6) 3.0 to 25 mA
Max. Reverse Voltage 7.0 V
RELA Y
OUTPUT CHARACTERISTICS Limits Units
Operating Voltage Range 0 to ±400 V
(DC or AC peak)
Max. Load Current @ TA=+40°C
5mA Control (See Fig.1) 120 mA
Max. On-State Resistance @T
A
=+25°C
For 50mA Pulsed Load, 5mA Control (See Fig.4) 35 Ω
Max. Off-State Leakage @TA=+25°C, ±400V (See Fig.5) 1.0 µA
Max. Turn-On Time @T
A
=+25°C (See Fig. 7)
For 50mA, 100 VDC Load, 5mA Control 2.0 m s
Max. Turn-Off T ime @T
A
=+25°C (See Fig. 7)
For 50mA, 100 VDC Load, 5mA Control 0.5 m s
Max. Output Capacitance @ 50V
DC
12 pF
OUTPUT CHARACTERISTICS Limits Units
Min. Collector-Emitter Breakdown Voltage @ IC = 10µA 20 V
DC
Min.Current Transfer Ratio @ I
LED
= 6mA, V
CE
= 5V (see Fig. 9) 33 %
Max. Saturation Voltage @ I
LED
= 16mA, IC = 2mA 0.5 V
Max. Leakage Current @ I
LED
=0mA, V
CE
= 5V 500 nA
Max. Power Dissipation @T
A
=+25°C (derate linearly 2.0mW/°C) 150 mW
COMBINED
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