International Rectifier PVDZ172N, PVDZ172NS Datasheet

HEXFET® POWER MOSFET PHOTOVOLTAIC RELAY

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Data Sheet No. 1.039

PVDZ172N

Microelectronic

Power IC Relay

Single Pole, Normally Open

0-60V DC, 1.5A

General Description

The PVDZ172N Photovoltaic Relay is a single­pole, normally open solid state relay that can
replace electromechanical relays used for gen­eral purpose switching of DC loads. It utilizes
International Rectifier’s HEXFET power MOS­FET as the output switch, driven by an integrated
circuit photovoltaic generator of novel construc­tion. The output switch is controlled by radiation
from a GaAlAs light emitting diode (LED) which
is optically isolated from the photovoltaic gen­erator.

These units overcome the limitations of both
electromechanical and reed relays by offering
the solid-state advantages of high sensitivity,
miniaturization, no contact bounce, long opera­tional life, insensitivity to external magnetic fields,
shock and vibration, and high reliability inherent
with solid state technology. They are ideally
suited for switching high currents or low level
signals without distortion or injection of electri­cal noise.

PVDZ172N Features

250mW On-Resistance

Bounce-free Operation

1.5 Amp capacity

4000 V

Solid-State reliability

UL recognition and CSA certification pending

I/O isolation

RMS

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These relays are packaged in 8-pin, molded
DIP packages and available with thru-hole and
SMT (gull-wing) leads, in plastic shipping tubes.

Applications

Portable Electronics

Programmable Logic Controllers

Computers and Peripheral Devices

Audio Equipment

Power Supplies and Power Distribution

(HEXFET is the registered trademark for International Rectifier Power MOSFETs)

Instrumentation

Part Identification

PVDZ172N thru-hole

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PVDZ172NS SMT (gull-wing)

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INTERNATIONAL RECTIFIER

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PVDZ172N Photovoltaic Relay

Electrical Specifications (-40°C ≤ TA ≤ =+85°C unless otherwise specified)

INPUT CHARACTERISTICS Limits Units

Min. Control Current (see Figures 1 and 2) 10 mA
Max. Control Current for Off-State Resistance

Control Current Range (Caution: Current limit input LED, see Fig.6) 5.0 to 25 mA
Max. Reverse Voltage 7.0 V

@ TA=+25°C

OUTPUT CHARACTERISTICS

Operating Voltage Range 0 to 60 V(DC)
Max. Load Current 40° C (See Fig. 1 and 2) 1.5 A(DC)

Max. Pulsed Load Current @TA=+25°C (100 ms @ 10% duty Cycle) 4.0 A(DC)
Max. Turn-On Time @T

For 500mA, 50VDC Load, 10mA Control

Max. Turn-Off Time @TA=+25°C (see Fig. 7) 0.5 ms

For 500mA, 50VDC Load, 10mA Control

Max. On State Resistance @TA=+25°C(pulsed) (See Fig. 4) 250 mΩ

1.0A Load, 10mA Control

Min. Off State Resistance @TA=+25°C @ 48 VDC (see Fig. 5) 10
Min. Off-State dv/dt 1000 V/µs

Output Capacitance (See Fig. 9) 150 pF @ 50 VDC

A=+25°C (see Fig. 7) 2.0 ms

0.4 mA

8

Ohms

GENERAL CHARACTERISTICS Limits Units

Dielectric Strength, Input-Output 4000 V
Insulation Resistance, Input-Output , 90 V
Capacitance, Input-Output 1.0 pF
Lead Temperature (1.6mm below seating plane) for 10 sec. +260 °C

Ambient Temperature Range: Operating -40 to +85 °C

Wiring Diagrams

(HEXFET is the registered trademark for International Rectifier Power MOSFETs)

DC

Schematic

Electromechanical

Analogy

Cathode

Anode

(RMS)

12

10

@TA=+25°C - 50% RH Ω

Storage -40 to +100 °C

Source

8

DC

5

Drain