International Rectifier PVD2352, PVD3354 Datasheet

BOSFET® Photovoltaic Relay

Next Data SheetIndex

Previous Datasheet

To Order

PD 1.025D

Series PVD33

Microelectronic

Power IC Relay

Single-Pole, 220mA, 0-300V DC

General Description

The Photovoltaic DC Relay (PVD) is a single-pole, nor­mally open solid state replacement for electro-me­chanical relays used for general purpose switching of
analog signals. It utilizes as an output switch a unique
bidirectional (AC or DC) MOSFET power IC termed a
BOSFET. The BOSFET is controlled by a photovoltaic
generator of novel construction, which is energized by
radiation from a dielectrically isolated light emitting di­ode (LED).

The PVD overcomes the limitations of both conven­tional and reed electromechanical relays by offering
the solid state advantages of long life, high operating
speed, low pick-up power, bounce-free operation, low
thermal voltages and miniaturization. These advan­tages allow product improvement and design innova­tions in many applications such as process control,
multiplexing, telecommunications, automatic test
equipment and data acquisition.

The PVD can switch analog signals from thermocouple
level to 300 volts peak DC. Signal frequencies into the
RF range are easily controlled and switching rates up
to 6kHz are achievable. The extremely small thermally
generated offset voltages allow increased measure­ment accuracies.

Unique silicon technology developed by International
Rectifier forms the hear t of the PVD. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power IC
chip has input circuitry for fast turn-off and gate protec­tion functions. This section of the BOSFET chip utilizes
both bipolar and MOS technology to for m NPN transis­tors, P-channel MOSFETs, resistors, diodes and ca­pacitors.

The photovoltaic generator similarly utilizes a unique
International Rectifier alloyed multijunction structure.
The excellent current conversion efficiency of this tech­nique results in the ver y fast response of the PVD mi­croelectronic power IC relay.

This advanced semiconductor technology has created
a radically new control device. Designers can now de­velop switching systems to new standards of electrical
perfor mance and mechanical compactness.

PVD33 Features

BOSFET Power IC

10

10

Operations

100µsec Operating Time

3 milliwatts Pick-Up Power

1000V/µsec dv/dt

Bounce-Free

8-pin DIP Package

-40°C to 85°C

UL recognized

Part Identification

Part Number Operating Sensitivity Off-State

Voltage (DC) Resistance

PVD2352 200V 10

5 mA

PVD3354 300V 1010 Ohms

(BOSFET is a trademark of International Rectifier)

8

Ohms

■■

■

■■

■■

■

■■

■■

■

■■

■■

■

■■

■■

■

■■

■■

■

■■

■■

■

■■

■■

■

■■

■■

■

■■

Series PVD33  BOSFET® Photovoltaic Relay

Next Data SheetIndex

Previous Datasheet

To Order

Electrical Specifications (-40°C ≤ TA ≤ +85°C unless otherwise specified)

INPUT CHARACTERISTICS PVD2352 PVD3354 Units

Minimum Control Current (see figures 1 and 2) DC

For 160mA Continuous Load Current 2.0 mA@25°C
For 200mA Continuous Load Current 5.0 mA@40°C

For 90mA Continuous Load Current 5.0 mA@85°C

Maximum Control Current for Off-State Resistance at 25°C 10 µA(DC)
Control Current Range (Caution: current limit input LED. See figure 6) 2.0 to 25 mA(DC)
Maximum Reverse Voltage 7.0 V(DC)

OUTPUT CHARACTERISTICS PVD2352 PVD3354 Units

Operating Voltage Range 200 300 V
Maxiumum Load Current 40°C (see figures 1and 2) 220
Response Time @25°C (see figures 7 and 8)

Max. T

Max. T
Max. On-state Resistance 25°C (Pulsed) (fig. 4) 50 mA Load, 5mA Control 6 Ω
Min. Off-state Resistance 25°C (see figure 5) 108 @ 160VDC 1010 @ 240VDC Ω
Max. Thermal Offset Voltage @ 5.0mA Control 0.2 µvolts
Min. Off-State dv/dt 1000 V/µs
Output Capacitance (see figure 9) 20 pF @ 50VDC

@ 12mA Control, 50 mA Load, 100 VDC 100 µs

(on)

@ 12mA Control, 50 mA Load, 100 VDC 50 µs

(off)

(peak)

mA(DC)

GENERAL CHARACTERISTICS (PVD2352 and PVD3354) Units

Dielectric Strength: Input-Output 2500 V
Insulation Resistance: Input-Output @ 90V
Maximum Capacitance: Input-Output 1.0 pF
Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.) +260
Ambient Temperature Range: Operating -40 to +85 °C

DC

Storage -40 to +100

12

10

@ 25°C - 50% RH Ω

RMS