International Rectifier PVD1352, PVD1354 Datasheet
BOSFET® Photovoltaic Relay
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PD 1.024D
Series PVD13
Microelectronic
Power IC Relay
Single-Pole, 500mA, 0-100V DC
General Description
The Photovoltaic DC Relay (PVD) is a single-pole, normally open solid state replacement for electro-mechanical relays used for general purpose switching of
analog signals. It utilizes as an output switch a unique
bidirectional (AC or DC) MOSFET power IC termed a
BOSFET. The BOSFET is controlled by a photovoltaic
generator of novel construction, which is energized by
radiation from a dielectrically isolated light emitting diode (LED).
The PVD overcomes the limitations of both conventional and reed electromechanical relays by offering
the solid state advantages of long life, high operating
speed, low pick-up power, bounce-free operation, low
thermal voltages and miniaturization. These advantages allow product improvement and design innovations in many applications such as process control,
multiplexing, telecommunications, automatic test
equipment and data acquisition.
The PVD can switch analog signals from thermocouple
level to 100 volts peak DC. Signal frequencies into the
RF range are easily controlled and switching rates up
to 2kHz are achievable. The extremely small thermally
generated offset voltages allow increased measurement accuracies.
Unique silicon technology developed by International
Rectifier forms the hear t of the PVD. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power IC
chip has input circuitry for fast turn-off and gate protection functions. This section of the BOSFET chip utilizes
both bipolar and MOS technology to for m NPN transistors, P-channel MOSFETs, resistors, diodes and capacitors.
The photovoltaic generator similarly utilizes a unique
International Rectifier alloyed multijunction structure.
The excellent current conversion efficiency of this technique results in the ver y fast response of the PVD microelectronic power IC relay.
This advanced semiconductor technology has created
a radically new control device. Designers can now develop switching systems to new standards of electrical
perfor mance and mechanical compactness.
PVD13 Features
BOSFET Power IC
10
10
Operations
300µsec Operating Time
3 milliwatts Pick-Up Power
1000V/µsec dv/dt
Bounce-Free
8-pin DIP Package
-40°C to 85°C
UL recognized
Part Identification
Part Number Operating Sensitivity Off-State
Voltage (DC) Resistance
PVD1352 10
0 – 100V 5 mA
PVD1354 1010 Ohms
(BOSFET is a trademark of International Rectifier)
8
Ohms
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Series PVD13 BOSFET® Photovoltaic Relay
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Electrical Specifications (-40°C ≤ TA ≤ +85°C unless otherwise specified)
INPUT CHARACTERISTICS PVD1352 PVD1354 Units
Minimum Control Current (see figures 1 and 2) DC
For 300mA Continuous Load Current 2.0 mA@25°C
For 400mA Continuous Load Current 5.0 mA@40°C
For 150mA Continuous Load Current 5.0 mA@85°C
Maximum Control Current for Off-State Resistance at 25°C 10 µA(DC)
Control Current Range (Caution: current limit input LED. See figure 6) 2.0 to 25 mA(DC)
Maximum Reverse Voltage 7.0 V(DC)
OUTPUT CHARACTERISTICS PVD1352 PVD1354 Units
Operating Voltage Range 0 to + 100 V
Maxiumum Load Current 40°C (see figures 1and 2) 500
Response Time @25°C (see figures 7 and 8)
Max. T
Max. T
Max. On-state Resistance 25°C (Pulsed) (fig. 4) 200 mA Load, 5mA Control 1.5 Ω
Min. Off-state Resistance 25°C @ 80 VDC (see figure 5) 10
Max. Thermal Offset Voltage @ 5.0mA Control 0.2 µvolts
Min. Off-State dv/dt 1000 V/µs
Output Capacitance 12 pF @ 50VDC
@ 12mA Control, 50 mA Load, 100 VDC 300 µs
(on)
@ 12mA Control, 50 mA Load, 100 VDC 50 µs
(off)
8
10
10
(PEAK)
mA(DC)
Ω
GENERAL CHARACTERISTICS (PVD1352 and PVD1354) Units
Dielectric Strength: Input-Output 2500 V
Insulation Resistance: Input-Output @ 90V
Maximum Capacitance: Input-Output 1.0 pF
Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.) +260
Ambient Temperature Range: Operating -40 to +85 °C
DC
Storage -40 to +100
12
10
@ 25°C - 50% RH Ω
RMS
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