International Rectifier PhotoSmart 335, IRF1104 Specifications

IRF1104

PRELIMINARY

HEXFET® Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.

The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

S

D

G

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 100 
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 71 A
I

DM

Pulsed Drain Current  400

PD @TC = 25°C Power Dissipation 170 W

Linear Derating Factor 1.11 W/°C

V

GS

Gate-to-Source Voltage ± 20 V

E

AS

Single Pulse Avalanche Energy 350 mJ

I

AR

Avalanche Current 60 A

E

AR

Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

Operating Junction and -55 to + 175
T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter Typ. Max. Units

R

θJC

Junction-to-Case ––– 0.90
R

θCS

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R

θJA

Junction-to-Ambient ––– 62

Thermal Resistance

V

DSS

= 40V

R

DS(on)

= 0.009Ω

ID = 100A

TO-220AB

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

Description

4/24/98

www.irf.com 1

PD- 9.1724A

IRF1104

2 www.irf.com

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient ––– 0.038 ––– V/°C Reference to 25°C, ID = 1mA

R

DS(on)

Static Drain-to-Source On-Resistance –– – ––– 0.009 Ω VGS = 10V, ID = 60A 

V

GS(th)

Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA

g

fs

Forward Transconductance 37 ––– –– – S VDS = 25V, ID = 60A

––– ––– 25

µA

VDS = 40V, VGS = 0V

––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100

nA

VGS = -20V

Q

g

Total Gate Charge ––– ––– 93 ID = 60A

Q

gs

Gate-to-Source Charge ––– ––– 29 nC VDS = 32V

Q

gd

Gate-to-Drain ("Miller") Charge ––– ––– 30 VGS = 10V, See Fig. 6 and 13 

t

d(on)

Turn-On Delay Time ––– 15 ––– VDD = 20V

t

r

Rise Time ––– 114 ––– ID = 60A

t

d(off)

Turn-Off Delay Time ––– 28 ––– RG = 3.6Ω

t

f

Fall Time ––– 19 ––– RD = 0.33Ω, See Fig. 10 

Between lead,

––– –––

6mm (0.25in.)
from package
and center of die contact

C

iss

Input Capacitance ––– 2900 ––– VGS = 0V

C

oss

Output Capacitance ––– 1100 ––– pF VDS = 25V

C

rss

Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5

nH

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

L

D

Internal Drain Inductance

L

S

Internal Source Inductance ––– –––

S

D

G

I

GSS

ns

4.5

7.5

I

DSS

Drain-to-Source Leakage Current

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 I

SD

≤ 60A, di/dt ≤ 304A/µs, V

DD

≤ V

(BR)DSS

,

TJ ≤ 175°C

Notes:

 Starting T

J

= 25°C, L = 194µH

RG = 25Ω, I

AS

= 60A. (See Figure 12)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

S

D

G

Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current MOSFET symbol
(Body Diode)

––– –––

showing the

I

SM

Pulsed Source Current integral reverse
(Body Diode) 

––– –––

p-n junction diode.

V

SD

Diode Forward Voltage ––– –– – 1.3 V TJ = 25°C, IS = 60A, VGS = 0V 

t

rr

Reverse Recovery Time ––– 74 110 ns TJ = 25°C, IF = 60A

Q

rr

Reverse RecoveryCharge ––– 188 280 nC di/dt = 100A/µs



t

on

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

100

400

A

 Caculated continuous current based on maximum allowable

junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4

IRF1104

www.irf.com 3

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH
T = 175 C

J

°

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.5V

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH
T = 25 C

J

°

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.5V

0.1

1

10

100

1000

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V = 50V
20µs PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

GS

D

T = 175 C

J

°

T = 25 C

J

°

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

10V

100A