International Rectifier MBRS360TR Datasheet
Bulletin PD-20586 rev. C 03/03
MBRS360TR
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics MBRS360TR Units
I
Rectangular 3.0 A
F(AV)
waveform
V
RRM
I
@ t p= 5 µs sine 790 A
FSM
VF@ 3.0 Apk, TJ = 125°C 0.61 V
TJrange - 55 to 150 °C
Device Marking: IR36
60 V
3 Amp
SMC
Description/Features
The MBRS360TR surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and small
foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
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2.75 (.108)
3.15 (.124)
6.60 (.260)
7.11 (.280)
2.00 (.079)
2.62 (.103)
0.76 (.030)
1.52 (.060)
For recommended footprint and soldering techniques refer to Application Note # AN-994
7.75 (.305)
8.13 (.320)
Outline SMC
Dimensions in millimeters and (inches)
5.59 (.220)
6.22 (.245)
.152 (.006)
.305 (.012)
.102 (.004)
.203 (.008)
CATHODE ANODE
1 2
POLARITY PART NUMBER
1
2
1
MBRS360TR
Bulletin PD-20586 rev. C 03/03
Voltage Ratings
Part number MBRS360TR
VRMax. DC Reverse Voltage (V) 60
V
Max. Working Peak Reverse Voltage (V)
RWM
Absolute Maximum Ratings
Parameters Value Units Conditions
I
Max. Average Forward Current 3.0 A 50% duty cycle @ TL = 118 °C, rectangular wave form
F(AV)
4.0 50% duty cycle @ TL = 105 °C, rectangular wave form
I
Max. Peak One Cycle Non-Repetitive 790 A 5µs Sine or 3µs Rect. pulse
FSM
Surge Current 80 10ms Sine or 6ms Rect. pulse
EASNon Repetitive Avalanche Energy 5.0 mJ TJ = 25 °C, IAS = 1.0A, L = 10mH
IARRepetitive Avalanche Current 1.0 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Following any rated
load condition and
with rated V
RRM
applied
Electrical Specifications
Parameters Typ Max Units Conditions
VFMMax. Forward Voltage Drop (1) 0.57 0.74 V @ 3A
0.72 0.9 V @ 6A
0.51 0.61 V @ 3A
0.62 0.77 V @ 6A
IRMMax. Reverse Leakage (1) - 0.5 mA TJ = 25 °C
Current - 20 mA TJ = 100°C
-30mAT
= 125 °C
J
CTMax. Junction Capacitance - 180 pF VR = 5VDC(test signal range 100KHz to 1Mhz) 25°C
LSTypical Series Inductance - 3.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change - 10000 V/µs (Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
Thermal-Mechanical Specifications
Parameters Value Units Conditions
TJMax. Junction Temperature Range (*) - 55 to 150 °C
T
Max. Storage Temperature Range - 55 to 150 °C
stg
R
Max. Thermal Resistance 12 °C/W DC operation
thJL
Junction to Lead (**)
R
Max. Thermal Resistance 46 °C/W DC operation
thJA
Junction to Ambient
wt Approximate Weight 0.24 (0.008) g (oz.)
Case Style SMC Similar to DO-214AB
Device Marking IR36
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
(**) Mounted 1 inch square PCB
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