International Rectifier LA7670Z4 Diagram

PD-97251

2N7633M2
IRHLA7670Z4

RADIATION HARDENED

60V, Combination 2N-2P-CHANNEL

LOGIC LEVEL POWER MOSFET
THRU-HOLE (14-LEAD FLAT PACK)

Product Summary

Part Number Radiation Level

IRHLA7670Z4

IRHLA7630Z4

100K Rads (Si)

300K Rads (Si)

International Rectifier’s R7

TM

Logic Level Power

R

DS(on)

0.60Ω

1.36Ω

0.60Ω

1.36Ω

MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.

These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.

I

D

0.8A

-0.56A

0.8A

-0.56A

TECHNOLOGY



CHANNEL

N
P
N
P

14-Lead Flat Pack

Features:

n 5V CMOS and TTL Compatible
n Low RDS(on)
n Fast Switching

n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight

Absolute Maximum Ratings (Per Die)

Pre-Irradiation

Parameter N-Channel P-Channel Units

ID@ VGS = ±4.5V, TC= 25°C Continuous Drain Current 0.8 -0.56

ID@ VGS = ±4.5V, TC=100°C Continuous Drain Current 0.5 -0.35

I

DM

PD @ TC = 25°C Max. Power Dissipation 0.6 0.6 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt 10.2 Â -5.79 ³

T

J

T

STG

For footnotes refer to the last page

Pulsed Drain Current À 3.2 -2.24

Linear Derating Factor 0.005 0.005 W/°C

Gate-to-Source Voltage ±10 ±10 V

Single Pulse Avalanche Energy 16 Á 26 ² mJ

Avalanche Current À 0.8 -0.56 A

Repetitive Avalanche Energy À 0.06 0.06 mJ

Operating Junction -55 to 150

Storage Temperature Range

Lead Temperature 300 (0.63 in./1.6 mm from case for 10s)
Weight 0.52 (Typical) g

A

V/ns

o

C

www.irf.com 1

03/17/08

IRHLA7670Z4, 2N7633M2 Pre-Irradiation

Electrical Characteristics For Each N-Channel Device @Tj = 25°C (Unless Otherwise specified)

Parameter Min Typ Max Units Test Conditions

BV

DSS

∆BV

DSS

R

DS(on)

V

GS(th)

∆V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

LS + L

D

from pack.)with Source wire internally

C

iss

C

oss

C

rss

R

g Gate Resistance

Drain-to-Source Breakdown Voltage 60 — — V VGS = 0V, ID = 250µA

/∆TJTemperature Coefficient of Breakdown — 0.067 — V/°C Reference to 25°C, ID = 1.0mA

Voltage
Static Drain-to-Source On-State — — 0.60 Ω VGS = 4.5V, ID = 0.5A
Resistance
Gate Threshold Voltage 1.0 — 2.0 V VDS = VGS, ID = 250µA

/∆TJ Gate Threshold Voltage Coefficient

Forward Transconductance 0.23 — — S VDS = 10V, IDS = 0.5A Ã
Zero Gate Voltage Drain Current — — 1.0 V

Gate-to-Source Leakage Forward — — 100 VGS = 10V
Gate-to-Source Leakage Reverse — — -100 VGS = -10V
Total Gate Charge — — 2.8 VGS = 4.5V, ID = 0.8A
Gate-to-Source Charge — — 0.6 nC VDS = 30V
Gate-to-Drain (‘Miller’) Charge — — 1.6
Turn-On Delay Time — — 6.5 VDD = 30V, ID = 0.8A,
Rise Time — — 2.5 VGS = 5.0V, RG = 24Ω
Turn-Off Delay Time — — 35
Fall Time — — 13
Total Inductance — 20 — Measured from Drain lead (6mm /0.25in

Input Capacitance — 141 — VGS = 0V, VDS = 25V
Output Capacitance — 38 — pF f = 1.0MHz
Reverse Transfer Capacitance — 1.4 —

— 8.0 — Ω f = 1.0MHz, open drain

— -4.7 — mV/°C

= 48V ,V

——10 VDS = 48V,

bonded from Source pin to Drain pad

µA

VGS = 0V, TJ =125°C

nA

ns

nH

from pack.) to Source lead (6mm/0.25in

DS

GS

Ã

= 0V

Source-Drain Diode Ratings and Characteristics (Per Die)

Parameter Min Typ Max Units Test Conditions

I

Continuous Source Current (Body Diode) — — 0.8

S

I

Pulse Source Current (Body Diode) À — — 3.2

SM

V

Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 0.8A, VGS = 0V Ã

SD

t

Reverse Recovery Time — — 55 ns Tj = 25°C, IF = 0.8A, di/dt ≤ 100A/µs

rr

Q

Reverse Recovery Charge — — 63 nC VDD ≤ 25V Ã

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

A

Thermal Resistance (Per Die)

Parameter Min Typ Max Units Test Conditions

R

thJA

Note: Corresponding Spice and Saber models are available on International Rectifier Website.

For footnotes refer to the last page

Junction-to-Ambient — — 210 Typical socket mount

°C/W

2 www.irf.com

+ LD.

S

Pre-Irradiation IRHLA7670Z4, 2N7633M2

Electrical Characteristics For Each P-Channel Device @Tj = 25°C (Unless Otherwise specified)

Parameter Min Typ Max Units Test Conditions

BV

DSS

∆BV

DSS

R

DS(on)

V

GS(th)

∆V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

LS + L

D

from pack.)with Source wire internally

C

iss

C

oss

C

rss

R

g Gate Resistance

Drain-to-Source Breakdown Voltage -60 — — V VGS = 0V, ID = -250µA

/∆TJTemperature Coefficient of Breakdown — -0.063 — V/°C Reference to 25°C, ID = -1.0mA

Voltage
Static Drain-to-Source On-State — — 1.36 Ω VGS = -4.5V, ID = -0.35A
Resistance
Gate Threshold Voltage -1.0 — -2.0 V VDS = VGS, ID = -250µA

/∆TJ Gate Threshold Voltage Coefficient

Forward Transconductance 0.7 — — S VDS = -10V, IDS = -0.35A Ã
Zero Gate Voltage Drain Current — — -1.0 V

Gate-to-Source Leakage Forward — — -100 VGS = -10V
Gate-to-Source Leakage Reverse — — 100 VGS = 10V
Total Gate Charge — — 2.8 VGS = -4.5V, ID = -0.56A
Gate-to-Source Charge — — 1.7 nC VDS = -30V
Gate-to-Drain (‘Miller’) Charge — — 1.2
Turn-On Delay Time — — 22 VDD = -30V, ID = -0.56A,
Rise Time — — 22 VGS = -5.0V, RG = 24Ω
Turn-Off Delay Time — — 40
Fall Time — — 32
Total Inductance — 20 — Measured from Drain lead (6mm /0.25in

Input Capacitance — 144 — VGS = 0V, VDS = -25V
Output Capacitance — 41 — pF f = 1.0MHz
Reverse Transfer Capacitance — 6.6 —

— 55 — Ω f = 1.0MHz, open drain

— 3.2 — mV/°C

= -48V ,V

— — -10 VDS = -48V,

bonded from Source pin to Drain pad

µA

VGS = 0V, TJ =125°C

nA

ns

nH

from pack.) to Source lead (6mm/0.25in

DS

GS

Ã

= 0V

Source-Drain Diode Ratings and Characteristics (Per Die)

Parameter Min Typ Max Units Test Conditions

I

Continuous Source Current (Body Diode) — — -0.56

S

I

Pulse Source Current (Body Diode) À — — -2.24

SM

V

Diode Forward Voltage — — -5.0 V Tj = 25°C, IS = -0.56A, VGS = 0V Ã

SD

t

Reverse Recovery Time — — 35 ns Tj = 25°C, IF = -0.56A, di/dt ≤ -100A/µs

rr

Q

Reverse Recovery Charge — — 9.6 nC VDD ≤ -25V Ã

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

A

+ LD.

S

Thermal Resistance (Per Die)

Parameter Min Typ Max Units Test Conditions

R

thJA

Note: Corresponding Spice and Saber models are available on International Rectifier Website.

For footnotes refer to the last page

Junction-to-Ambient — — 210 Typical socket mount

°C/W

www.irf.com 3

IRHLA7670Z4, 2N7633M2 Pre-Irradiation

Radiation Characteristics

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter Up to 300K Rads (Si)1Units Test Conditions

Min Max

BV

DSS

V

GS(th)

I

GSS

I

GSS

I

DSS

R

DS(on)

R

DS(on)

V

SD

1. Part numbers IRHLA7670Z4, IRHLA7630Z4

Drain-to-Source Breakdown Voltage 60 —
Gate Threshold Voltage 1.0 2.0 VGS = VDS, ID = 250µA
Gate-to-Source Leakage Forward — 100
Gate-to-Source Leakage Reverse — -100 VGS = -10V
Zero Gate Voltage Drain Current — 1.0 µA VDS= 48V, VGS= 0V
Static Drain-to-Source 
On-State Resistance (TO-39) — 0.60 Ω VGS = 4.5V, ID = 0.5A
Static Drain-to-Source On-state 

Resistance (14-Lead Flat Pack) — 0.60 Ω VGS = 4.5V, ID = 0.5A

Diode Forward Voltage  — 1.2 V VGS = 0V, ID = 0.8A

V

nA

VGS = 0V, ID = 250µA

VGS = 10V

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Typical Single Event Effect Safe Operating Area (Per Die)

Ion LET Energy Range VDS (V)

(MeV/(mg/cm2)) (MeV) (µm)

Br 37 305 39 60 60 60 60 60 35 30 20

I 60 370 34 60 60 60 60 60 20 15 -

Au 84 390 30 60 60 60 60 - - - -

70
60
50
40
30

VDS

20
10

0

@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=

0V -2V -4V -5V -6V -7V -8V -10V

Br

I

Au

-10-9-8-7-6-5-4-3-2-10

VGS

Fig a. Typical Single Event Effect, Safe Operating Area

For footnotes refer to the last page

4 www.irf.com

Radiation Characteristics

Pre-Irradiation IRHLA7670Z4, 2N7633M2

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics For Each P-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter Up to 300K Rads (Si)1Units Test Conditions

Min Max

BV

DSS

V

GS(th)

I

GSS

I

GSS

I

DSS

R

DS(on)

R

DS(on)

V

SD

1. Part numbers IRHLA7670Z4, IRHLA7630Z4

Drain-to-Source Breakdown Voltage -60 —
Gate Threshold Voltage -1.0 -2.0 VGS = VDS, ID = -250µA
Gate-to-Source Leakage Forward — -100
Gate-to-Source Leakage Reverse — 100 VGS = 10V
Zero Gate Voltage Drain Current — -1.0 µA VDS= -48V, VGS= 0V
Static Drain-to-Source 
On-State Resistance (TO-39) — 1.25 Ω VGS = -4.5V, ID = -0.35A
Static Drain-to-Source On-state 

Resistance (14-Lead Flat Pack) — 1.36 Ω VGS = -4.5V, ID = -0.35A

Diode Forward Voltage — -5.0 V VGS = 0V, ID = -0.56A

V

nA

VGS = 0V, ID = -250µA

VGS = -10V

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Typical Single Event Effect Safe Operating Area (Per Die)

Ion LET Energy Range VDS (V)

(MeV/(mg/cm2)) (MeV) (µm)

Br 37 305 39 -60 -60 -60 -60 -60 -50 -35 -25

I 60 370 34 -60 -60 -60 -60 -60 -20 - -

Au 84 390 30 -60 -60 -60 -60 - - - -

-70

-60

-50

-40

-30

VDS

-20

-10
0

@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=

0V 2V 4V 5V 6V 7V 8V 10V

Br

I

Au

012345678910

VGS

Fig a. Typical Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com 5