International Rectifier IRSF3031L, IRSF3031 Datasheet
Provisional Data Sheet No. PD 6.069A
Description
The IRSF3031 is a three-terminal monolithic SMART POWER MOSFET with built-in short circuit, over-temperature, ESD and over-voltage
protections and dual set/reset threshold input.
The on-chip protection circuit latches off the power MOSFET in case
the drain current exceeds 4A (typical) or the junction temperature exceeds 165°C (typical) and keeps it off until the input is driven below the
Reset Threshold voltage. The drain-to-source voltage is actively
clamped at 55V (typical) prior to the avalanche of the power MOSFET,
thus improving its performance during turn-off with inductive loads.
The input requirements are very low (100µA typical) which makes the
IRSF3031 compatible with most existing designs based on standard
power MOSFETs.
V
ds(clamp)
50 V
R
ds(on)
200 m
Ω
I
ds(sd)
1.8 A
T
j(sd)
165
o
C
E
AS
200 mJ
FULLY PROTECTED DMOS POWER SWITCH
Features
■ Extremely Rugged for Harsh Operating Environments
■ Over Temperature Protection
■ Over Current Protection
■ Active Drain-to-Source Clamp
■ ESD Protection
■ Compatible with Standard Power MOSFET
■ Low Operating Input Current
■ Monolithic Construction
■ Dual Set/Reset Threshold Input
Applications
■ Solenoid Driver
■ DC Motor Driver
Available Packages
IRSF3031L
(SOT-223)
IRSF3031
(TO-220AB)
IRSF3031
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25°C unless
otherwise specified.)
Minimum Maximum Units Test Conditions
V
ds, max
Continuous Drain to Source Voltage 50
V
V
in, max
Continuous Input Voltage 0 8
I
ds
Continuous Drain Current self limited
P
d
Power Dissipation 30 W T
c
≤ 25°C
E
AS
Unclamped Single Pulse Inductive Energy 200 mJ
V
esd1
Electrostatic Discharge Voltage (Human Body Model) 4000
V
1000pF. 1.5kΩ
V
esd2
Electrostatic Discharge Voltage (Machine Model) 1000 200pF, 0Ω
T
Jop
Operating Junction Temperature Range -40 150
T
Stg
Storage Temperature Range -40 150 °C
T
L
Lead Temperature (Soldering, 10 seconds) 300
IRSF3031
Minimum Typical Maximum Units Test Conditions
V
ds,clamp
Drain to Source Clamp Voltage 50 56 65 V Ids = 2A
R
ds(on)
Drain to Source On Resistance 155 200 mΩ V
in
= 5V, Ids = 2A
I
dss
Drain to Source Leakage Current 250 µA Vds = 40V, Vin = 0V
V
set
Input Threshold Voltage 2.5 3.2 4.0 V V
ds
= 5V, Ids > 10mA
V
reset
Input Protection Reset Threshold Voltage 0.5 1.0 1.5 V V
ds
= 5V, Ids < 10µA
I
i,on
Input Supply Current (Normal Operation) 100 300 µ A Vin = 5V
I
i,off
Input Supply Current (Protection Mode) 120 400 µ A Vin = 5V
V
in, clamp
Input Clamp Voltage 9 10 V Iin = 10mA
V
sd
Body-Drain Diode Forward Drop 1.5 V Ids = -2A, R
in
= 1kΩ
Static Electrical Characteristics
(Tc = 25°C unless otherwise specified.)
Minimum Typical Maximum Units Test Conditions
RΘ
jc
Thermal Resistance, Junction-to-Case 4
°C/W
RΘ
jA
Thermal Resistance, Junction-to-Ambient 62
Thermal Characteristics
Switching ElectricalCharacteristics
(VCC = 14V, Resistive Load (RL) = 10Ω, Rin= 100Ω. Typical specifications measured at TC= 25°C. Min/max specifications are for T
C
= -40°C to TC=125°C unless otherwise specified.)
Minimum Typical Maximum Units Test Conditions
t
don
Turn-On Delay Time 30 Vin = 2V to 5V, 50% to 90%
t
r
Rise Time 30
µs
Vin = 2V to 5V, 90% to 10%
t
doff
Turn-Off Delay Time 30 Vin = 2V to 5V, 50% to 10%
t
f
Fall Time 30 Vin = 2V to 5V, 10% to 90%
SR Output Positive Slew Rate -5 5
V/µs
Vin = 2V to 5V, +dVds/dt
SR Output Positive Slew Rate -5 5 Vin = 2V to 5V, -dVds/dt
Minimum Typical Maximum Units Test Conditions
I
ds(sd)
Current Limit 1.8 4 6 A Vin = 5V
T
j(sd)
Over Temperature Shutdown Threshold 155 165 °C Vin = 5V, Ids = 2A
V
protect
Min. Input Voltage for Over-temp function 3 V
t
Iresp
Over Current Response Time TBD µs
I
peak
Peak Short Circuit Current TBD A
t
reset
Protection Reset Time TBD
µs
t
Tresp
Over-Temperature Response Time TBD
Protection Characteristics
(TC= 25 °C unless otherwise specified. Min/Max specifications are for TC= -40°C to TC = +125°C unless otherwise
specified.)
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