International Rectifier IRSF3021, IRSF3021L Datasheet
Provisional Data Sheet No. PD 6.068B
Description
The IRSF3021 Lamp and DC Motor Driver is a fully protected three
terminal monolithic SMART POWER MOSFET that features current
limiting, over-temperature protection, gate-to-source ESD protection
and gate-to-drain clamp for over-voltage protection.
The on-chip protection circuit limits the drain current in the on-state.
The over-temperature circuitry turns off the POWER MOSFET when
the junction temperature exceeds 165°C. The device restarts automatically once it has cooled down below the reset temperature.
The IRSF3021 is specifically designed for driving loads that require
overload protection and in-rush current control while operating in automotive and industrial environments. Targeted applications include
resistive loads such as lamps or capacitive loads such as airbag squibs
and DC motor drives.
V
ds(clamp)
50 V
R
ds(on)
200 m
Ω
I
lim
3.0 A
T
j(sd)
165
o
C
E
AS
200 mJ
FULLY PROTECTED POWER MOSFET SWITCH
Features
■ Controlled Slew Rate Reduces EMI
■ Over Temperature Protection with Auto-Restart
■ Linear Current-Limit Protection
■ Active Drain-to-Source Clamp
■ ESD Protection
■ Compatible with Standard Power MOSFET
■ Low Operating Input Current
■ Monolithic Construction
■ Logic Level Input Threshold
Applications
■ Cabin Lighting
■ Airbag System
■ Programmable Logic Controller
■ DC Motor Drive
Available Packages
IRSF3021L
(SOT-223)
IRSF3021
(TO-220AB)
IRSF3021
IRSF3021 Block Diagram
Drain
Source
Input
IRSF3021
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25°C unless
otherwise specified.)
Minimum Maximum Units Test Conditions
V
ds, max
Continuous Drain to Source Voltage 50
V
V
in, max
Continuous Input Voltage -0.3 8
I
ds
Continuous Drain Current self limited
P
d
Power Dissipation 30 W T
c
≤ 25°C
E
AS
Unclamped Single Pulse Inductive Energy 200 mJ
V
esd1
Electrostatic Discharge Voltage (Human Body Model) 4000
V
1000pF. 1.5kΩ
V
esd2
Electrostatic Discharge Voltage (Machine Model) 1000 200pF, 0Ω
T
Jop
Operating Junction Temperature Range -40
self-limited
T
Stg
Storage Temperature Range -40 175 °C
T
L
Lead Temperature (Soldering, 10 seconds) 300
Switching ElectricalCharacteristics
(VCC = 14V, Resistive Load (RL) = 10Ω, Rin= 100Ω. Specifications measured at TC= 25°C unless otherwise specified.)
Minimum Typical Maximum Units Test Conditions
t
don
Turn-On Delay Time 10 50 Vin = 0V to 5V, 50% to 90%
t
r
Rise Time 30 80
µs
Vin = 0V to 5V, 90% to 10%
t
doff
Turn-Off Delay Time 20 60 Vin = 0V to 5V, 50% to 10%
t
f
Fall Time 15 50 Vin = 0V to 5V, 10% to 90%
SR Output Positive Slew Rate -4 4
V/µs
Vin = 0V to 5V, +dVds/dt
SR Output Positive Slew Rate -4 4 Vin = 0V to 5V, -dVds/dt
Minimum Typical Maximum Units Test Conditions
V
ds,clamp
Drain to Source Clamp Voltage 50 56 65
V
Ids = 6A, tp = 700 µS
R
ds(on)
Drain to Source On Resistance 155 200 mΩ V
in
= 5V, Ids = 2A
I
dss
Drain to Source Leakage Current 250 µA Vds = 40V, Vin = 0V
V
th
Input Threshold Voltage 1.0 2.0 3.0 V V
ds
= Vin, Ids + Iin= 10mA
I
i,on
Input Supply Current (Normal Operation) 100 300 µ A Vin = 5V
I
i,off
Input Supply Current (Protection Mode) 500 µ A Vin = 5V
V
in, clamp
Input Clamp Voltage 9 10 V Iin = 1mA
V
sd
Body-Drain Diode Forward Drop➂ 1.5 V I
ds
= -2A, R
in
= 1kΩ
Static Electrical Characteristics
(Tc = 25°C unless otherwise specified.)
Minimum Typical Maximum Units Test Conditions
RΘ
jc
Junction to Case 4
°C/W TO-220AB
RΘ
jA
Junction to Ambient 60
RΘ
jc
Junction to PCB 40
°C/W SOT-223
RΘ
jA
Junction to PCB ➀ 60
Thermal Characteristics
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