International Rectifier IRLZ44NS, IRLZ44NL Datasheet
PD - 91347D
IRLZ44NS/L
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRLZ44NS)
l Low-profile through-hole (IRLZ44NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
G
HEXFET® Power MOSFET
D
R
DS(on)
V
DSS
= 55V
= 0.022Ω
ID = 47A
S
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
Pak is a surface mount power package capable of
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
2
D Pak
TO-262
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ44NL) is available for lowprofile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 47
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 33 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 110 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 160
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ±16 V
Single Pulse Avalanche Energy 210 mJ
Avalanche Current 25 A
Repetitive Avalanche Energy 11 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 1.4
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
°C/W
°C
5/11/98
IRLZ44NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.070 ––– V/°C Reference to 25°C, ID = 1mA
J
––– ––– 0.022 VGS = 10V, ID = 25A
Static Drain-to-Source On-Resistance
––– ––– 0.025 Ω VGS = 5.0V, ID = 25A
––– ––– 0.035 VGS = 4.0V, ID = 21A
Gate Threshold Voltage 1. 0 ––– 2 .0 V VDS = VGS, ID = 250µA
Forward Transconductance 21 ––– ––– S VDS = 25V, ID = 25A
Drain-to-Source Leakage Current
––– ––– 25 VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
µA
nA
VGS = 16V
Total Gate Charge ––– ––– 48 ID = 25A
Gate-to-Source Charge ––– ––– 8.6 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 25 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time ––– 11 ––– VDD = 28V
Rise Time ––– 84 ––– ID = 25A
Turn-Off Delay Time ––– 26 ––– RG = 3.4Ω, VGS = 5.0V
ns
Fall Time ––– 15 ––– RD = 1.1Ω, See Fig. 10
Internal Source Inductance 7.5
––– –––
Between lead,
nH
and center of die contact
Input Capacitance ––– 1700 ––– VGS = 0V
Output Capacitance ––– 400 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 150 ––– ƒ = 1.0MHz, See Fig. 5
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
47
160
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V
Reverse Recovery Time ––– 80 120 ns TJ = 25°C, IF = 25A
Reverse Recovery Charge ––– 210 320 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
G
S
Notes:
I
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L =470µH
DD
RG = 25Ω, I
= 25A. (See Figure 12)
AS
≤ 25A, di/dt ≤ 270A/µs, V
SD
DD
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRLZ44N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
≤ V
(BR)DSS
,
IRLZ44NS/L
)
A
)
A
A
A
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
D
I , Drain-to-Source Current (A)
2.5V
20µs PULSE WIDTH
T = 25°C
1
0.1 1 10 100
V , Dra in-t o-So u rc e V o ltage (V
DS
J
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
D
I , Drain-to-Source Current (A)
2.5V
20µs PULSE WIDTH
T = 175°C
1
0.1 1 10 100
V , Dra in-t o-So u rc e V o ltage (V
DS
J
Fig 2. Typical Output Characteristics
3.0
I = 41 A
D
T = 25°C
GS
J
T = 175°C
J
V = 25 V
DS
20µs PU LSE W IDTH
100
10
D
I , Dra in-to -S o urc e C u rre nt (A )
1
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
V , Ga te -to-Source Voltage (V )
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Norm alized)
1.0
0.5
DS(on)
R , D r ain -to- S ou r c e On Resi s tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = 10 V
GS
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