International Rectifier IRLZ14S, IRLZ14L Datasheet
PD - 9.903A
IRLZ14S/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRLZ14S)
l Low-profile through-hole (IRLZ14L)
l 175°C Operating Temperature
l Fast Switching
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
The D
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
2
D
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ14L) is available for lowprofile applications.
G
2
D Pa k
D
S
V
DSS
R
DS(on)
I
TO-262
= 60V
= 0.20Ω
= 10A
D
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10
@ TC = 100°C Continuous Drain Current, VGS @ 10V 7.2 A
I
D
I
DM
PD @TA = 25°C Power Dissipation 3.7 W
PD @TC = 25°C Power Dissipation 43 W
V
GS
E
AS
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
T
J
T
STG
Pulsed Drain Current 40
Linear Derating Factor 0.29 W/°C
Gate-to-Source Voltage ± 10 V
Single Pulse Avalanche Energy 68 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
°C
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case ––– 3.5
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40
Parameter Typ. Max. Units
°C/W
8/25/97
IRLZ14S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 60 –– – ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.2 V
––– – –– 0.28
Ω
= 5.0V, ID = 6.0A
GS
VGS = 4.0V, ID = 5.0A
Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 3.5 ––– ––– S VDS = 25V, ID = 6.0A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– – –– 10 0 V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 60V, VGS = 0V
µA
= 10V
GS
nA
VGS = -10V
Total Gate Charge ––– ––– 8.4 ID = 10A
Gate-to-Source Charge ––– ––– 3.5 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– –– – 6.0 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time –– – 9.3 ––– VDD = 30V
Rise Time ––– 110 ––– ID = 10A
Turn-Off Delay Time –– – 1 7 ––– RG = 12Ω
Fall Time ––– 26 ––– RD = 2.8Ω, See Fig. 10
Internal Source Inductance 7.5
––– –––
Between lead,
nH
and center of die contact
Input Capacitance ––– 400 ––– VGS = 0V
Output Capacitance ––– 170 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 42 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
I
SD
TJ ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 10A, VGS = 0V
Reverse Recovery Time – – – 93 130 ns TJ = 25°C, IF = 10A
Reverse Recovery Charge ––– 340 650 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
= 25V, starting TJ = 25°C, L = 790µH
= 10A. (See Figure 12)
AS
≤ 10A, di/dt ≤ 90A/µs, V
DD
≤ V
(BR)DSS
––– –––
––– –––
10
40
showing the
A
p-n junction diode.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRLZ14 data and test conditions
,
D
G
S
IRLZ14S/L
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