International Rectifier IRLU120N, IRLR120N, IRLR120NTRR, IRLR120NTRL, IRLR120NTR Datasheet
IRLR/U120N
HEXFET® Power MOSFET
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.185Ω
ID = 10A
Description
5/11/98
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 7.0 A
I
DM
Pulsed Drain Current 35
PD @TC = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy 85 mJ
I
AR
Avalanche Current 6.0 A
E
AR
Repetitive Avalanche Energy 4.8 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 3.1
R
θJA
Junction-to-Ambient (PCB mount) ** ––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
Thermal Resistance
D - P AK
TO-252AA
I-PAK
TO-251AA
l Surface Mount (IRLR120N)
l Straight Lead (IRLU120N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91541B
www.irf.com 1
IRLR/U120N
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.185 VGS = 10V, ID = 6.0A
––– ––– 0.225 W VGS = 5.0V, ID = 6.0A
––– ––– 0.265 VGS = 4.0V, ID = 5.0A
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
g
fs
Forward Transconductance 3.1 ––– ––– S VDS = 25V, ID = 6.0A
––– ––– 25
µA
VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
nA
VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
Q
g
Total Gate Charge ––– ––– 20 ID = 6.0A
Q
gs
Gate-to-Source Charge ––– ––– 4.6 nC VDS = 80V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 10 VGS = 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 4.0 ––– VDD = 50V
t
r
Rise Time ––– 35 –––
ns
ID = 6.0A
t
d(off)
Turn-Off Delay Time ––– 23 ––– RG = 11Ω, VGS = 5.0V
t
f
Fall Time ––– 22 ––– RD = 8.2Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 440 ––– VGS = 0V
C
oss
Output Capacitance ––– 97 ––– pF VDS = 25V
C
rss
Reverse Transfer Capacitance ––– 50 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
I
GSS
S
D
G
L
S
Internal Source Inductance ––– 7.5 –––
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance ––– 4.5 –––
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 6.0A, VGS = 0V
t
rr
Reverse Recovery Time ––– 110 160 ns TJ = 25°C, IF =6.0A
Q
rr
Reverse RecoveryCharge ––– 410 620 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
10
35
Notes:
V
DD
= 25V, starting TJ = 25°C, L = 4.7mH
RG = 25Ω, I
AS
= 6.0A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
I
SD
≤ 6.0A, di/dt ≤ 340A/µs, V
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
Uses IRL520N data and test conditions.
This is applied for I-PAK, L
S
of D-PAK is measured between lead and
center of die contact
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRLR/U120N
www.irf.com 3
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
and
0.1
1
10
100
0.1 1 10 100
I , D ra in-to -S o u rc e C u rre nt ( A )
D
V , D rain-to-Source V oltage (V)
DS
A
20µs PU LS E WIDTH
T = 25°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
0.1
1
10
100
0.1 1 10 100
I , D ra in-to -S o u rc e C u rre nt ( A )
D
V , D rain-to-Source V oltage (V)
DS
A
20µs PU LS E WIDTH
T = 175°C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
0.1
1
10
100
246810
T = 25°C
J
GS
V , Ga te -to-S o u rc e Vo ltage (V
)
D
I , Drain-to-Source Current (A)
T = 175°C
J
A
V = 50V
20µs PULSE W IDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Tem perature (°C)
R , D ra in -to -S o u rc e On Res is ta nc e
DS(on)
(N o rmaliz e d)
V = 10 V
GS
A
I = 1 0A
D
Loading...