International Rectifier IRLR 8113, IRLU 8113 Service Manual
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Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l Very Low R
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
(on) at 4.5V V
DS
GS
and Current
Absolute Maximum Ratings
Parameter Units
V
DS
V
GS
@ TC = 25°C
I
D
@ TC = 100°C
I
D
I
DM
PD @TC = 25°C
@TC = 100°C
P
D
T
J
T
STG
Drain-to-Sour ce Voltage V
Gate-to-Source Volt age
Conti n uous Drai n Cur r e nt, V
Conti n uous Drai n Cur r e nt, V
Pulsed Drain Curre nt
Maximum Power Dissipation W
Maximum Power Dissipation
Linear D er ating Factor W/°C
Operating Junction and °C
Stor ag e Temperat ur e Ra ng e
Soldering Temperature, for 10 seconds
Mount ing torque, 6-32 or M 3 s crew
c
@ 10V
GS
@ 10V
GS
HEXFET® Power MOSFET
V
DSS
R
DS(on)
30V
D-Pak
IRLR8113
Max.
30
± 20
f
94
f
67
380
89
44
0.59
-55 to + 175
300 (1. 6m m fr o m case)
x
in (1.1 Nxm)
10 lbf
IRLR8113
IRLU8113
max
6.0m
:
PD - 94621
Qg
22nC
I-Pak
IRLU8113
A
Thermal Resistance
Parameter Typ. Max. Units
R
JC
θ
R
JA
θ
R
JA
θ
Junction-to-Case ––– 1.69
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient ––– 110
g
––– 50 °C/W
Notes through are on page 11
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02/14/03
IRLR/U8113
/
/
gy
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
∆ΒV
DSS
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs Forwa r d Transconductance 74 ––– ––– S
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Sou r c e Br e akdown V ol t a ge 30 ––– ––– V
∆T
Breakdown Voltag e Temp. Coefficient ––– 21 ––– mV/°C
J
Stat ic D r ai n- to-Sou rce On-Res i s tance ––– 4.8 6.0
––– 5.8 7.4
Gate Thr es hold Voltage 1.35 ––– 2.25 V
∆T
Gate Thr es hold Voltage Coef ficien t ––– -5.6 ––– mV /°C
J
Drain-to-Sou r c e Le akage Cur rent ––– ––– 1.0 µA
––– ––– 150
Gate-to-Sour c e Forward Lea k age ––– ––– 100 nA
Gate-to-Sou rce Rever s e Le akage ––– ––– -100
Total Gate Charge ––– 22 32
Pre-Vth Gate-to-Source Charge ––– 6.1 –––
Post-Vth Gate-to-Source Charge ––– 1.7 ––– nC
Gate-to-Drain Charge ––– 6.8 –––
Gate Cha r ge Ov e r drive ––– 7.4 ––– See Fig. 16
Switch Charge (Q
gs2
+ Qgd)
––– 8.5 –––
Output Charge ––– 14 ––– nC
Turn- O n Delay Time ––– 9.2 –––
Rise Time ––– 3.8 –– –
Turn-Off Delay Time ––– 15 – –– n s
Fall Time ––– 10 –––
Input Capacitance ––– 2920 –––
Outpu t C ap ac itance ––– 610 ––– pF
Reverse Transfer Capacitance ––– 260 –––
VGS = 0V, ID = 250µA
Referen ce to 25°C, I
Ω
m
V
= 10V, ID = 15A
GS
= 4.5V, ID = 12A
V
GS
VDS = VGS, ID = 250µA
V
= 24V, VGS = 0V
DS
V
= 24V, VGS = 0V, TJ = 175°C
DS
VGS = 20V
V
= -20V
GS
V
= 15V, ID = 12A
DS
V
= 15V
DS
= 4.5V
V
GS
= 12A
I
D
= 16V, VGS = 0V
V
DS
V
= 15V, VGS = 4.5V
DD
ID = 12A
Clampe d I n ductiv e Load
V
= 0V
GS
= 15V
V
DS
ƒ = 1.0MHz
Conditions
= 1mA
D
e
e
e
Avalanche Characteristics
Parameter Units
E
AS
I
AR
E
AR
Single Pulse Avala nche Ener
Avalanche Current
c
Repeti ti ve Avalanche Energy
d
c
Typ.
–––
–––
–––
Max.
145
13
8.9
mJ
A
mJ
Diode Characterist ics
Paramet er Min. Typ . Max. Units
f
I
S
Contin uous Source Current ––– –––
(Body Diode) A
I
SM
V
SD
t
rr
Q
rr
t
on
Pulsed Source Current ––– ––– 380
(Body Diode)
c
Diode Forward Voltage ––– ––– 1 .0 V
Reverse Recovery Time ––– 33 49 ns
Reverse Recovery Charge ––– 30 45 nC
Forward Turn-On Time In trinsic turn-on time is negligible (turn-on is dominated by LS+LD)
94
MOSFET symbol
showing the
integral reverse
p-n junct ion diode.
TJ = 25°C, IS = 12A, VGS = 0V
T
= 25°C, IF = 12A, VDD = 15V
J
di/dt = 100A/µs
Conditions
G
e
2 www.irf.com
D
S
e
IRLR/U8113
1000
TOP 10V
)
A
(
t
100
n
e
r
r
u
C
e
c
r
10
u
o
S
-
o
t
-
n
i
a
r
1
D
,
D
I
2.5V
BOTTOM 2.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
1000
)
Α
(
t
n
e
r
100
r
u
C
e
c
r
u
o
S
-
o
t
-
n
10
i
a
r
D
,
D
I
TJ = 25°C
V
DS
TJ = 175°C
= 15V
20µs PULSE WIDTH
1
2 3 4 5 6 7 8
VGS, Gate-t o-Source Vol tage (V)
VGS
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
I
D
1000
100
TOP 10V
BOTTOM 2.5V
2.5V
10
20µs PULSE WIDTH
VGS
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
Tj = 175°C
1
0.1 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
e
c
n
a
t
s
i
s
e
R
n
O
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
)
n
o
(
S
D
R
ID = 30A
V
= 10V
GS
1.5
)
d
e
z
i
1.0
l
a
m
r
o
N
(
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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IRLR/U8113
100000
)
F
10000
p
(
e
c
n
a
t
i
c
a
p
a
C
,
1000
C
100
V
= 0V, f = 1 MHZ
GS
C
= C
iss
rss
oss
= C
= C
gs
gd
ds
C
C
C
iss
C
oss
C
rss
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1000.00
)
A
(
t
100.00
n
e
r
r
u
C
n
i
a
r
D
e
s
r
e
v
e
R
,
D
S
I
10.00
TJ = 175°C
TJ = 25°C
1.00
0.10
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
+ Cgd, C
+ C
gd
SHORTED
ds
V
GS
= 0V
)
V
(
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
e
t
a
G
,
S
G
V
6.0
ID= 12A
5.0
4.0
3.0
2.0
1.0
0.0
0 5 10 15 20 25 30
VDS= 24V
VDS= 15V
Q
Total G ate Charge (nC)
G
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
)
A
(
t
n
e
r
r
100
u
C
e
c
r
u
o
S
-
o
t
-
n
10
i
a
r
D
,
Tc = 25°C
D
I
Tj = 175°C
Single Pulse
1
1 10 100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
VDS, Drain-to-Source Voltage (V)
100µsec
1msec
10msec
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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