International Rectifier IRLR 8103 V Service Manual

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• N-Channel Application-Specific MOSFETs

S

D

G

DS(on)

7.9 m

SW

Absolute Maximum Ratings

V

Continuous Drain or Source Current

I

Thermal Resistance

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Minimizes Parallel MOSFETs for high current
applications

•

100% RG Tested

Description

This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.

The IRLR8103V has been optimized for all parameters
that are critical in synchronous buck converters including
R

, gate charge and Cdv/dt-induced turn-on immunity.

DS(on)

The IRLR8103V offers an extremely low combination of
Qsw & R
synchronous FET applications.

for reduced losses in both control and

DS(on)

The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.

PD-94021C

IRLR8103V

D-Pak

DEVICE CHARACTERISTICS

IRLR8103V

R

Q

G

Q

Q

OSS

Ω

27 nC
12 nC

29nC

Parameter

Drain-Source Volt age
Gate-Source Voltage

(V

> 10V)

GS

Pulsed Drain Current
Power Dissip ation
Junction & Storage Temperature Range

Continuous Source Current (Body Diode)
Pulsed Source Current

c

e

c

Parameter

Maximum Ju nct ion-to -Am bie nt
Maximum Ju nct ion-to-Case

eh

h

TC = 25°C

TC= 90°C

TC = 25°C
TC = 90°C

Symbol Units

DS

V

GS

I

D

I

DM

P

D

T

, T

J

STG

I

S

SM

Symbol Typ. Max. Units

R

θJA

R

θJC

IRLR8103V

30

±20

91
63

363
115

60

-55 to 150
91

363

––– 50
––– 1.09

V

A

W

°C

A

°C/W

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10/22/04

IRLR8103V

Electrical Charact eristics

Source-Drain Rating & Characteristics

–––

0.9

1.3

V

Reverse Recovery Charge

Parameter Symbol Min Typ Max Units

Drain-to-Source Breakdown Voltage
Static Drain-Source

On-Resistance ––– 7.9 10.5
Gate Threshold Voltage

Drain-to-Source Leakage Current

Gate-Source Leakage Current
Total Gate Charge, Control FET
Total Gate Charge, Synch FET
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate to Drain Charge
Switch Charge (Q

+ Qgd)Q

gs2

Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

BV
R

V
I

DSS

I

GSS

Q
Q
Q
Q
Q

Q
R
t

d(on)

t

r

t

d(off)

t

f

C
C
C

DSS

DS(on)

GS(th)

G
G
GS1
GS2
GD
SW
OSS
G

iss
oss
rss

30 ––– ––– V

––– 6.9 9.0

1.0 ––– 3.0 V

––– ––– 50 µA
––– ––– 20

––– ––– 100
––– ––– ±100 nA

––– 27 –––
––– 23 –––
––– 4.7 –––
––– 2.0 –––
––– 9.7 –––
––– 12 –––
––– 29 –––

0.8 ––– 3.1
––– 10 –––
––– 9 –––
––– 24 –––
––– 18 –––
––– 2672 –––
––– 1064 –––
––– 109 –––

Conditions

VGS = 0V, ID = 250µA

= 10V, ID = 15A

V

GS

Ω

m

V

= 4.5V, ID = 15A

GS

V

= VGS, ID = 250µA

DS

= 30V, VGS = 0V

V

DS

= 24V, VGS = 0

V

DS

µA

V

= 24V, VGS = 0, TJ = 100°C

DS

V

= ± 20V

GS

VGS = 5V, ID = 15A, VDS = 16V
V

= 5V, VDS < 100mV

GS

nC

V

= 16V, ID = 15A

DS

= 16V, VGS = 0

V

DS

Ω

V

= 16V

DD

= 15A

I

D

ns

pF

= 5.0V

V

GS

Clamped Inductive Load

= 16V, VGS=0

V

GS

d

d

Parameter Symbol Min Typ Max Units

Diode Forward Voltage

Reverse Recovery Charge
(with Parallel Schottky)

f

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ≤ 400 µs; duty cycle ≤ 2%.
 When mounted on 1 inch square copper board, t < 10 sec.
 Typ = measured - Q
 Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q

 R

is measured at TJ approximately 90°C

θ

Conditions

d

, V

V

SD

f

oss

Q

rr

Q

rr(s)

––– 103 ––– nC

––– 96 ––– nC

measured at VGS = 5.0V, IF = 15A.

OSS

IS = 15A
di/dt ~ 700A/µs

= 16V, VGS = 0V, IF = 15A

V

DS

di/dt = 700A/µs , (with 10BQ040)

= 16V, VGS = 0V, IF = 15A

V

DS

GS

= 0V

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IRLR8103V

1000

100

TOP

BOTTOM

VGS
15V
10V

7.0V

5.5V

4.5V

4.0V

3.5V

2.7V

2.7V

10

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

1

0.1 1 10 100

V , Drain-to-Sou rce Voltage (V)

DS

1000

J

1000

100

TOP

BOTTOM

VGS
15V
10V

7.0V

5.5V

4.5V

4.0V

3.5V

2.7V

2.7V

10

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 150 C

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

I =

D

15A

1.5

1.0

100

°

T = 25 C

J

°

T = 150 C

J

(Normalized)

0.5

D

I , Drain-to-Source Current (A)

V = 15V

DS

10

2.0 3.0 4.0 5.0 6.0 7.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Te m peratur e ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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