Page 1
www.DataSheet4U.com
PD - 95555A
SMPS MOSFET
IRLR3715PbF
IRLU3715PbF
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
V
DSS
20V 14mΩ 54A
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
DS(on)
at 4.5V V
GS
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 54
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 38 A
I
DM
PD @TC = 25°C Maximum Power Dissipation 71 W
PD @TA = 25°C Maximum Power Dissipation 3.8 W
Linear Derating Factor 0.48 W/°C
TJ , T
STG
Drain-Source Voltage 20 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 210
Junction and Storage Temperature Range -55 to + 175 °C
R
DS(on)
D-Pak I-Pak
IRLR3715 IRLU3715
max I
D
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
Junction-to-Case ––– 2.1
Junction-to-Ambient ––– 110 °C/W
Junction-to-Ambient (PCB mount) ––– 50
Notes through are on page 10
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12/6/04
Page 2
IRLR/U3715PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
––– 11 14 V
––– 15 20 VGS = 4.5V, ID = 21A
mΩ
= 10V, ID = 26A
GS
Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 16V, VGS = 0V
µA
= 16V
GS
nA
V
GS
= -16V
Forward Transconductance 26 ––– ––– S VDS = 10V, ID = 21A
Total Gate Charge ––– 11 17 ID = 21A
Gate-to-Source Charge ––– 3.8 ––– nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 4.4 ––– VGS = 4.5V
Output Gate Charge ––– 11 17 VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 6.4 ––– VDD = 10V
Rise Time ––– 73 ––– ID = 21A
Turn-Off Delay Time ––– 12 ––– RG = 1.8Ω
ns
Fall Time ––– 5.1 ––– VGS = 4.5V
Input Capacitance ––– 1060 ––– VGS = 0V
Output Capacitance ––– 700 ––– VDS = 10V
Reverse Transfer Capacitance ––– 120 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 110 mJ
Avalanche Current ––– 21 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
54
210
showing the
A
p-n junction diode.
G
––– 0.9 1.3 V TJ = 25°C, IS = 21A, VGS = 0V
––– 0.8 ––– TJ = 125°C, IS = 21A, VGS = 0V
Reverse Recovery Time ––– 37 56 ns TJ = 25°C, IF = 21A, VR=20V
Reverse Recovery Charge ––– 28 42 nC di/dt = 100A/µs
Reverse Recovery Time ––– 38 57 ns TJ = 125°C, IF = 21A, VR=20V
Reverse Recovery Charge ––– 30 45 nC di/dt = 100A/µs
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D
S
Page 3
IRLR/U3715PbF
1000
100
10
TOP
BOTTOM
VGS
15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
2.5V
2.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 25 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
1000
J
1000
100
10
D
I , Drain-to-Source Current (A)
°
1
0.1 1 10 100
VGS
TOP
15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
BOTTOM
2.5V
2.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
I =
D
52A
2.0
°
T = 25 C
J
100
D
I , Drain-to-Source Current (A)
10
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V , Gate-to-Source Voltage (V)
GS
T = 175 C
J
V = 15V
DS
20µs PULSE WIDT H
Fig 3. Typical Transfer Characteristics
°
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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Page 4
IRLR/U3715PbF
10000
)
F
p
1000
(
e
c
n
a
t
i
c
a
p
a
C
,
100
C
10
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
C
C
iss
rss
oss
Ciss
Coss
Crss
ds
gd
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
10
1
SD
I , Reverse Drain Current (A)
0.1
0.0 0.4 0.8 1.2 1.6 2.0 2.4
°
T = 175 C
J
°
T = 25 C
J
V ,Source-to-Drain Voltage (V)
SD
V = 0 V
SHORTED
GS
14
I =
21A
D
12
10
8
6
4
GS
V , Gate-to-Source Voltage (V)
2
0
0 5 10 15 20 25
Q , Total Gate Charge (nC)
G
V = 16V
DS
V = 10V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
)
A
(
t
n
e
r
r
100
u
C
e
c
r
u
o
S
o
t
n
10
i
a
r
D
,
D
Tc = 25°C
I
Tj = 175°C
Single Pulse
1
1 10 100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
V
, Drain-toSource Voltage (V)
DS
100µsec
1msec
10msec
13
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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Page 5
IRLR/U3715PbF
R
D.U.T.
D
+
V
DD
-
60
LIMITED BY PACKAGE
50
R
40
V
DS
V
GS
G
4.5V
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
D
I , Drain Current (A)
10
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
thJC
D = 0.50
1
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 6
IRLR/U3715PbF
A
15V
DRIVER
+
V
DD
-
R
V
20V
V
DS
G
GS
L
D.U.T
I
AS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
240
TOP
200
160
120
80
40
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
D
8.5A
15A
21A
°
Current Regulator
Same Type as D.U.T.
Q
G
4.5 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
V
GS
Fig 13b. Gate Charge Test Circuit
50KΩ
.2µF
.3µF
3mA
Current Sampling Resistors
+
V
D.U.T.
I
G
DS
-
I
D
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Page 7
IRLR/U3715PbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P. W .
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFET® Power MOSFETs
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Page 8
IRLR/U3715PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE:
Note: "P" in ass embly line position
8 www.irf.com
T HIS IS AN IRF R120
WIT H AS S EMB LY
LOT CODE 1234
ASS EMBL ED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
i ndicates "L ead- F r ee"
OR
INTERNAT IONAL
RECT IFIER
LOGO
ASSEMBLY
LOT CODE
INTERNATIONAL
RECT IFIER
LOGO
ASSEMBLY
LOT CODE
IRFU120
12 34
PART NUMBER
IRF U120
916A
12
34
PART NUMBER
DATE CODE
P = DE S IGNAT E S L E AD- F RE E
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WE E K 1 6
A = ASSEMBLY SITE CODE
DATE CODE
YEAR 9 = 1999
WE E K 1 6
LINE A
Page 9
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
IRLR/U3715PbF
I-Pak (TO-251AA) Part Marking Information
EXAMPLE:
THIS IS AN IR FU120
WITH ASSEMBLY
LOT CODE 5678
ASS EMBL ED ON WW 19, 1999
IN THE ASSEMBLY LINE "A"
Note: "P" in assembly line
position indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
IRF U120
56
919A
OR
INTE RNAT IONAL
RECT IFIER
LOGO
ASSEMBLY
LOT CODE
IRFU 120
56 78
www.irf.com 9
PART NUMBER
DAT E CODE
P = D ES IGN AT ES LE AD- F RE E
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WE E K 19
A = ASSEMBLY SITE CODE
PAR T NUMBE R
DATE CODE
78
YEAR 9 = 1999
WEEK 19
LINE A
Page 10
IRLR/U3715PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TRL
12.1 ( .47 6 )
11.9 ( .46 9 )
NOTES :
1. CONTROLL ING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OU TLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
NOTES :
1. OUTLINE CONF ORMS TO EIA-481.
FEED DIRECTION
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 0.51mH
J
= 21A,VGS=10V
AS
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 30A.
This product has been designed and qualified for the Industrial market.
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
16 mm
16.3 ( .641 )
15.7 ( .619 )
FEED DIRECTION
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer
to application note #AN-994
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/04
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