International Rectifier IRLR 3715, IRLU 3715 Service Manual
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PD - 95555A
SMPS MOSFET
IRLR3715PbF
IRLU3715PbF
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
V
DSS
20V 14mΩ 54A
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
DS(on)
at 4.5V V
GS
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 54
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 38 A
I
DM
PD @TC = 25°C Maximum Power Dissipation 71 W
PD @TA = 25°C Maximum Power Dissipation 3.8 W
Linear Derating Factor 0.48 W/°C
TJ , T
STG
Drain-Source Voltage 20 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 210
Junction and Storage Temperature Range -55 to + 175 °C
R
DS(on)
D-Pak I-Pak
IRLR3715 IRLU3715
max I
D
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
Junction-to-Case ––– 2.1
Junction-to-Ambient ––– 110 °C/W
Junction-to-Ambient (PCB mount) ––– 50
Notes through are on page 10
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12/6/04
IRLR/U3715PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
––– 11 14 V
––– 15 20 VGS = 4.5V, ID = 21A
mΩ
= 10V, ID = 26A
GS
Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 16V, VGS = 0V
µA
= 16V
GS
nA
V
GS
= -16V
Forward Transconductance 26 ––– ––– S VDS = 10V, ID = 21A
Total Gate Charge ––– 11 17 ID = 21A
Gate-to-Source Charge ––– 3.8 ––– nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 4.4 ––– VGS = 4.5V
Output Gate Charge ––– 11 17 VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 6.4 ––– VDD = 10V
Rise Time ––– 73 ––– ID = 21A
Turn-Off Delay Time ––– 12 ––– RG = 1.8Ω
ns
Fall Time ––– 5.1 ––– VGS = 4.5V
Input Capacitance ––– 1060 ––– VGS = 0V
Output Capacitance ––– 700 ––– VDS = 10V
Reverse Transfer Capacitance ––– 120 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 110 mJ
Avalanche Current ––– 21 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
54
210
showing the
A
p-n junction diode.
G
––– 0.9 1.3 V TJ = 25°C, IS = 21A, VGS = 0V
––– 0.8 ––– TJ = 125°C, IS = 21A, VGS = 0V
Reverse Recovery Time ––– 37 56 ns TJ = 25°C, IF = 21A, VR=20V
Reverse Recovery Charge ––– 28 42 nC di/dt = 100A/µs
Reverse Recovery Time ––– 38 57 ns TJ = 125°C, IF = 21A, VR=20V
Reverse Recovery Charge ––– 30 45 nC di/dt = 100A/µs
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D
S
IRLR/U3715PbF
1000
100
10
TOP
BOTTOM
VGS
15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
2.5V
2.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 25 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
1000
J
1000
100
10
D
I , Drain-to-Source Current (A)
°
1
0.1 1 10 100
VGS
TOP
15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
BOTTOM
2.5V
2.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
I =
D
52A
2.0
°
T = 25 C
J
100
D
I , Drain-to-Source Current (A)
10
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V , Gate-to-Source Voltage (V)
GS
T = 175 C
J
V = 15V
DS
20µs PULSE WIDT H
Fig 3. Typical Transfer Characteristics
°
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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