International Rectifier IRLML5203 Datasheet
PD - 93967
PROVISIONAL
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produce a HEXFET Power MOSFET with the industry's
smallest footprint. This package, dubbed the Micro3
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
TM
IRLML5203
HEXFET® Power MOSFET
V
DSS
-30V 98@VGS = -10V -3.0A
1
G
2
S
,
R
DS(on)
max (m
165@VGS = -4.5V -2.6A
D3
Ω)Ω)
Ω) I
Ω)Ω)
Micro3
D
TM
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.0
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -2.4 A
I
DM
PD @TA = 25°C Power Dissipation 1.25
PD @TA = 70°C Power Dissipation 0.80
V
GS
T
J, TSTG
Drain- Source Voltage -30 V
Pulsed Drain Current -24
W
Linear Derating Factor 10 mW/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 100 °C/W
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8/28/00
IRLML5203
PROVISIONAL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 98 VGS = -10V, ID = -3.0A
––– ––– 165 VGS = -4.5V, ID = -2.6A
mΩ
Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA
Forward Transconductance 3.1 ––– ––– S VDS = -10V, ID = -3.0A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– – –– 100 VGS = 20V
––– ––– -1.0 VDS = -24V, VGS = 0V
––– ––– -5.0 VDS = -24V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 9.5 14 ID = -3.0A
Gate-to-Source Charge ––– 2.3 3.5 nC VDS = -24V
Gate-to-Drain ("Miller") Charge ––– 1.6 2.4 VGS = -10V
Turn-On Delay Time ––– 12 ––– VDD = -15V
Rise Time ––– 18 ––– ID = -1.0A
Turn-Off Delay Time ––– 88 ––– RG = 6.0Ω
ns
Fall Time ––– 52 ––– VGS = -10V
Input Capacitance ––– 510 ––– VGS = 0V
Output Capacitance – –– 71 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 43 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
-1.3–––
-24
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.3A, VGS = 0V
Reverse Recovery Time ––– 17 26 ns TJ = 25°C, IF = -1.3A
Reverse Recovery Charge ––– 12 18 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
PROVISIONAL
IRLML5203
100
10
1
0.1
D
-I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
100
VGS
TOP
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM
-2.7V
-2.70V
20µs PULSE WIDTH
T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM
-2.7V
-2.70V
20µs PULSE WIDTH
-V , Drain-to-Source Voltage (V)
DS
°
T = 150 C
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
3.0A
I =
D
1.5
10
°
T = 150 C
J
1
°
T = 25 C
D
-I , Drain-to-Source Current (A)
0.1
2.0 3.0 4.0 5.0 6.0 7.0
J
V = -15V
DS
20µs PULSE WIDTH
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
-10V
GS
°
Vs. Temperature
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