International Rectifier IRLI640G Datasheet
HEXFET® Power MOSFET
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Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
R
Fast Switching
Ease of paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
Specified at V
DS(ON)
= 4V & 5V
GS
PD - 9.1237
IRLI640G
V
= 200V
DSS
R
ID = 9.9A
DS(on)
= 0.18Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 5.0V 9.9
ID @ TC = 100°C Continuous Drain Current, VGS @ 5.0V 6.3 A
I
DM
PD @TC = 25°C Power Dissipation 40 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 40
Linear Derating Factor 0.32 W/°C
Gate-to-Source Voltage ±10 V
Single Pulse Avalanche Energy 290 mJ
Avalanche Current 9.9 A
Repetitive Avalanche Energy 4.0 mJ
Operating Junction and -55 to + 150
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case –––– –––– 3.1
Junction-to-Ambient –––– –––– 65
°C/W
Revision 0
IRLI640G
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.27 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.18 VGS = 5.0V, ID = 5.9A
––– ––– 0.27 VGS = 4.0V, ID = 5.0A
Ω
Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 16 ––– ––– S VDS = 50V, ID = 10A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 10V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
––– ––– 25 VDS = 200V, VGS = 0V
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 160°C
µA
nA
Total Gate Charge ––– ––– 66 ID = 17A
Gate-to-Source Charge ––– ––– 9.0 nC VDS = 160V
Gate-to-Drain ("Miller") Charge ––– ––– 38 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 8.0 ––– VDD = 100V
Rise Time ––– 83 ––– ID = 17A
ns
Turn-Off Delay Time ––– 44 ––– RG = 4.6Ω
Fall Time ––– 52 ––– RD = 5.7Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1800 ––– VGS = 0V
Output Capacitance ––– 400 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 120 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 9.9A, VGS = 0V
Reverse Recovery Time ––– 310 470 ns TJ = 25°C, IF = 17A
Reverse RecoveryCharge ––– 3.2 4.8 µC di/dt = 100A/µs
Forward Turn-On Time
= 25V, starting TJ = 25°C, L = 4.4mH
AS
Parameter Min. Typ. Max. Units Conditions
= 9.9A. (See Figure 12)
––– ––– 9.9
A
––– ––– 40
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 17A, di/dt ≤ 150A/µs, V
SD
DD
≤ V
(BR)DSS
,
t=60s, ƒ=60Hz
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRLI640G
A
A
A
A
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100
VG S
TOP 7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
10
BOTTOM 2.2 5V
1
0.1
D
I , Drain-to-Source Current (A)
2.25V
20µs PULSE WIDTH
T = 25°C
0.01
0.01 0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
C
Fig 1. Typical Output Characteristics,
TC = 25oC
100
100
VGS
TOP 7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
10
BOTTOM 2.2 5 V
2.25V
1
0.1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
0.01
0.01 0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
C
Fig 2. Typical Output Characteristics,
TC = 150oC
2.5
I = 17A
D
10
T = 150° C
J
1
D
I , Drain-to-Source Current (A)
0.1
2.0 2.5 3.0 3.5 4.0 4.5 5.0
V , Gate-to-Source Volta ge (V)
GS
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
T = 25°C
J
V = 50V
DS
20µs PULSE WIDTH
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
Vs. Temperature
V = 5.0V
GS
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