International Rectifier IRLI2203G Datasheet

HEXFET® Power MOSFET

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Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Logic-Level Gate Drive

R

Description

Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.

Specified at VGS=5.0V & 10V

DS(on)

PD - 9.1092A

IRLI2203G

V

= 30V

DSS

R

DS(on)

ID = 52A

= 0.010Ω

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 52
ID @ TC = 100°C Continuous Collector Current, VGS @ 10V 37 A
I

DM

PD @TC = 25°C Power Dissipation 48 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
T

J

T

STG

Pulsed Drain Current 210

Linear Derating Factor 0.32 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 90 mJ
Avalanche Current 31 A
Repetitive Avalanche Energy 4.8 mJ

Operating Junction and -55 to + 175
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJA

Junction-to-Case –––– –––– 3.1
Junction-to-Ambient –––– –––– 65

Revision 1

°C/W

IRLI2203G

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C Drain to Sink Capacitance ––– 12 ––– pF ƒ = 1.0MHz

Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA, TJ >-40°C

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.039 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.010 VGS = 10V, ID = 31A
––– ––– 0.015 VGS = 5.0V, ID = 26A

Ω

Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 44 ––– ––– S VDS = 25V, ID = 55A

Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 10V

Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V

Total Gate Charge

Gate-to-Source Charge ––– ––– 23 VDS = 24V

––– ––– 25 VDS = 30V, VGS = 0V
––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C

µA

nA

––– ––– 85 ID= 46A, VDS= 24V, VGS= 5.0V
––– ––– 150 ID= 55A

nC

Gate-to-Drain ("Miller") Charge ––– ––– 36 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 9.1 ––– VDD = 15V
Rise Time ––– 110 ––– ID = 55A
Turn-Off Delay Time ––– 110 ––– RG = 5.0Ω

ns

Fall Time ––– 100 ––– RD = 0.26Ω, See Fig. 10

Internal Drain Inductance ––– 4.5 –––

Internal Source Inductance ––– 7.5 –––

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 3700 ––– VGS = 0V
Output Capacitance ––– 1700 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 310 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

V

= 25V, starting TJ = 25°C, L = 20µH

DD

RG = 25Ω, I

Caculated continuous current based on maximum allowable junction temperature;

for recomended current-handling of the package refer to Design Tip # 93-4

Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.

––– ––– 52

A

––– ––– 210

Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 31A, VGS = 0V
Reverse Recovery Time ––– 59 89 ns TJ = 25°C, IF = 55A
Reverse RecoveryCharge ––– 0.11 0.17 µC di/dt = 100A/µs
Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

I

≤ 55A, di/dt ≤ 100A/µs, V

SD

DD

≤ V

(BR)DSS

,

t=60s, ƒ=60Hz

TJ ≤ 175°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 55A. (See Figure 12)

AS

IRLI2203G

A

A

A

A

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10000

VGS
TOP 10.00V

5.0 0V

4.0 0V

3.5 0V

3.0 0V

1000

2.7 5V

2.5 0V
BO TTOM 2.25V

100

10

1

D

I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

2.25V
20µs PULSE WIDTH
T = 25°C

c

Fig 1. Typical Output Characteristics,

T

= 25oC

C

1000

1000

VGS
TOP 10.00V

5.00V

4.00V

3.50V

3.00V

2.75V

2.50V

100

BOTTOM 2.25V

10

2.25V

1

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH
T = 175°C

0.1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

C

Fig 2. Typical Output Characteristics,

TC = 175oC

2.5

I = 52A

D

100

10

D

I , Drain-to-Source Current (A)

1

2 3 4 5 6 7 8 9 10

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

T = 25°C

J

V , Gate -to-Source Voltage (V)

GS

T = 1 7 5°C

J

V = 1 5 V

DS

20µs PULSE WIDTH

2.0

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature (°C)

J

Vs. Temperature

V = 5.0V

GS