International Rectifier IRL630S Datasheet
HEXFET® Power MOSFET
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Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
150°C Operating Temperature
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The SMD-220 is suitable
for high current applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
Specified at VGS = 4V & 5V
DS(ON)
PD - 9.1254
IRL630S
V
= 200V
DSS
R
ID = 9.0A
= 0.40Ω
DS(on)
SMD-220
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 5.0V 9.0
ID @ TC = 100°C Continuous Drain Current, VGS @ 5.0V 5.7 A
I
DM
PD @TC = 25°C Power Dissipation 74
PD @TC = 25°C Power Dissipation (PCB Mount)** 3.1
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J, TSTG
Pulsed Drain Current 36
Linear Derating Factor 0.59
Linear Derating Factor (PCB Mount)** 0.025
Gate-to-Source Voltage ±10 V
Single Pulse Avalanche Energy 250 mJ
Avalanche Current 9.0 A
Repetitive Avalanche Energy 7.4 mJ
Junction and Storage Temperature Range -55 to + 150
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
W/°C
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJA
R
θJA
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Junction-to-Case –––– –––– 1.7
Junction-to-Ambient (PCB Mount)** –––– –––– 40 °C/W
Junction-to-Ambient –––– –––– 62
W
°C
Revision 0
IRL630S
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.27 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.40 VGS = 5.0V, ID = 5.4A
––– ––– 0.50 VGS = 4.0V, ID = 4.5A
Ω
Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 4.8 ––– ––– S VDS = 50V, ID = 5.4A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 10V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
––– ––– 25 VDS = 200V, VGS = 0V
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– ––– 40 ID = 9.0A
Gate-to-Source Charge ––– ––– 5.5 nC VDS = 160V
Gate-to-Drain ("Miller") Charge ––– ––– 24 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 8.0 ––– VDD = 100V
Rise Time ––– 57 ––– ID = 9.0A
ns
Turn-Off Delay Time ––– 38 ––– RG = 6.0Ω
Fall Time ––– 33 ––– RD = 11Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1100 ––– VGS = 0V
Output Capacitance ––– 220 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 70 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L = 4.6mH
DD
RG = 25Ω, I
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 9.0
A
––– ––– 36
Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 9.0A, VGS = 0V
Reverse Recovery Time ––– 230 350 ns TJ = 25°C, IF = 9.0A
Reverse RecoveryCharge ––– 1.7 2.6 µC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 9.0A, di/dt ≤ 120A/µs, V
SD
DD
≤ V
(BR)DSS
,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 9.0A. (See Figure 12)
AS
IRL630S
A
A
A
A
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100
VG S
TOP 7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
BOTTOM 2.25V
10
1
D
I , Drain-to-Source Current (A)
2.25V
20µs PULSE WIDTH
T = 25°C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
c
Fig 1. Typical Output Characteristics,
TC = 25oC
100
100
VG S
TOP 7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
BOTTOM 2.25V
10
2.25V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
0.1
0.1 1 10 100
V , D rain-to-Source Voltage (V)
DS
C
Fig 2. Typical Output Characteristics,
TC = 150oC
2.5
I = 9.0A
D
10
T = 150°C
J
1
0.1
D
I , Drain-to-Source Current (A)
0.01
2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
T = 25°C
J
V = 50V
DS
20µs PULSE WIDTH
V , Ga te -to-Sou rc e Voltag e (V)
GS
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
Vs. Temperature
V = 5.0V
GS
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