International Rectifier IRL630 Datasheet
HEXFET® Power MOSFET
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Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
150°C Operating Temperature
Fast Switching
Ease of paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Specified at V
DS(ON)
= 4V & 5V
GS
PD -9.1255
IRL630
V
= 200V
DSS
R
ID = 9.0A
DS(on)
= 0.40 Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 5.0V 9.0
ID @ TC = 100°C Continuous Drain Current, VGS @ 5.0V 5.7 A
I
DM
PD @TC = 25°C Power Dissipation 74 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 36
Linear Derating Factor 0.59 W/°C
Gate-to-Source Voltage ±10 V
Single Pulse Avalanche Energy 250 mJ
Avalanche Current 9.0 A
Repetitive Avalanche Energy 7.4 mJ
Operating Junction and -55 to + 150
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case –––– –––– 1.7
Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
Junction-to-Ambient –––– –––– 62
Revision 0
IRL630
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.27 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.40 VGS = 5.0V, ID = 5.4A
––– ––– 0.50 VGS = 4.0V, ID = 4.5A
Ω
Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 4.8 ––– ––– S VDS = 50V, ID = 5.4A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 10V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
––– ––– 25 VDS = 200V , VGS = 0V
––– ––– 250 VDS = 160V , VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– ––– 40 ID = 9.0A
Gate-to-Source Charge ––– ––– 5.5 nC VDS = 160V
Gate-to-Drain ("Miller") Charge ––– ––– 24 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 8.0 ––– VDD = 100V
Rise Time ––– 57 ––– ID = 9.0A
ns
Turn-Off Delay Time ––– 38 ––– RG = 6.0Ω
Fall Time ––– 33 ––– RD = 11Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1100 ––– VGS = 0V
Output Capacitance ––– 220 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 70 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L = 4.6mH
DD
RG = 25Ω, I
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 9.0
A
––– ––– 36
Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 9.0A, VGS = 0V
Reverse Recovery Time ––– 230 350 ns TJ = 25°C, IF = 9.0A
Reverse Recovery Charge ––– 1.7 2.6 µC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 9.0A, di/dt ≤ 120A/µs, V
SD
DD
≤ V
(BR)DSS
,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 9.0A. (See Figure 12)
AS
100
A
A
A
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VGS
TOP 7 .50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
BOTTOM 2.25 V
10
1
IRL630
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
2.25V
20µs PULSE WIDTH
T = 25°C
c
Fig 1. Typical Output Characteristics,
TC = 25oC
100
10
T = 150° C
J
1
T = 25 °C
J
0.1
D
I , Drain-to-Source Current (A)
0.01
2.0 2.5 3.0 3.5 4.0 4.5 5.0
V , Gate-to-Source Voltage (V)
GS
V = 50V
DS
20µs PULSE WIDTH
D
I , Drain-to-Source Current (A)
Fig 2. Typical Output Characteristics,
TC = 150oC
2.5
I = 9.0A
D
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
V = 5.0V
GS
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
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