International Rectifier IRL620S Datasheet
HEXFET® Power MOSFET
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Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
Fast Switching
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The SMD-220 is a surface-mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface-mount application.
Specified at VGS=4V & 5V
DS(on)
PD -9.1218
IRL620S
V
= 200V
DSS
R
ID = 5.2A
DS(on)
SMD-220
= 0.80Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 5.0 V 5.2
ID @ TC = 100°C Continuous Drain Current, VGS @ 5.0 V 3.3 A
I
DM
PD @TC = 25°C Power Dissipation 50
PD @TA = 25°C Power Dissipation (PCB Mount)** 3.1
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, T
STG
Pulsed Drain Current 21
Linear Derating Factor 0.40
Linear Derating Factor (PCB Mount)** 0.025
Gate-to-Source Voltage ±10 V
Single Pulse Avalanche Energy 125 mJ
Avalanche Current 5.2 A
Repetitive Avalanche Energy 5.0 mJ
Junction and Storage Temperature Range -55 to + 150
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
A
W
W/°C
°C
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJA
R
θJA
** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques, refer
to Application Note AN-994.
Junction-to-Case — — 2.5
Junction-to-Ambient (PCB Mount)** — — 40 °C/W
Junction-to-Ambient — — 62
Revision 0
IRL620S
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient — 0.27 — V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance — — 0.80 VGS = 10.0V, ID = 3.1A
— — 1.0 VGS = 4.0V, ID = 2.6A
Ω
Gate Threshold Voltage 1.0 — 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 1.2 — — S VDS = 50V, ID = 3.1A
Drain-to-Source Leakage Current — — 25 VDS = 200V, VGS = 0V
— — 250 VDS = 320V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage — — 100 VGS = 10V
Gate-to-Source Reverse Leakage — — -100 VGS = -10V
µA
nA
Total Gate Charge — — 16 ID = 5.2A
Gate-to-Source Charge — — 2.9 nC VDS = 160V
Gate-to-Drain ("Miller") Charge — — 9.6 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time — 4.2 — VDD = 100V
Rise Time — 31 — ID = 5.2A
Turn-Off Delay Time — 18 — RG = 9.0Ω
ns
Fall Time — 17 — RD = 20Ω, See Fig. 10
Internal Drain Inductance — 4.5 — Between lead,
6mm (0.25in.)
Internal Source Inductance — 7.5 — from package
nH
and center of
die contact
Input Capacitance — 360 — VGS = 0V
Output Capacitance — 91 — pF VDS = 25V
Reverse Transfer Capacitance — 27 — ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 50V, starting TJ = 25°C, L = 6.9mH
DD
RG = 25Ω, I
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
— — 5.2
A
— — 21
Diode Forward Voltage — — 1.8 V TJ = 25°C, IS = 5.2A, VGS = 0V
Reverse Recovery Time — 180 270 ns TJ = 25°C, IF = 5.2A
Reverse RecoveryCharge — 1.1 1.7 µC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 5.2A, di/dt ≤ 95A/µs, V
SD
DD
≤ V
(BR)DSS
,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 5.2A. (See Figure 12)
AS
IRL620S
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain Current (Amps)
I
D
, Drain Current (Amps)
I
D
, Drain Current (Amps)
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Fig 1. Typical Output Characteristics,
TC = 25oC
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics,
TC = 150oC
Vs. Temperature
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