International Rectifier IRL620 Datasheet
HEXFET® Power MOSFET
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Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
Fast Switching
Ease of paralleling
Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
Specified at V
DS(ON)
= 4V & 5V
GS
PD -9.1217
IRL620
V
= 200V
DSS
R
ID = 5.2A
DS(on)
= 0.80 Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 5.0V 5.2
ID @ TC = 100°C Continuous Drain Current, VGS @ 5.0V 3.3 A
I
DM
PD @TC = 25°C Power Dissipation 50 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 21
Linear Derating Factor 0.40 W/°C
Gate-to-Source Voltage ±10 V
Single Pulse Avalanche Energy 125 mJ
Avalanche Current 5.2 A
Repetitive Avalanche Energy 5.0 mJ
Operating Junction and -55 to + 150
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case — — 2.5
Case-to-Sink, Flat, Greased Surface — 0.50 — °C/W
Junction-to-Ambient — — 62
Revision 0
IRL620
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient — 0.27 — V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
— — 0.80 VGS = 5.0V, ID = 3.1A
— — 1.0 VGS = 4.0V, ID = 2.6A
Ω
Gate Threshold Voltage 1.0 — 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 1.2 — — S VDS = 50V, ID = 3.1A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage — — 100 VGS = 10V
Gate-to-Source Reverse Leakage — — -100 VGS = -10V
— — 25 VDS = 200V , VGS = 0V
— — 250 VDS = 160V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge — — 16 ID = 5.2A
Gate-to-Source Charge — — 2.7 nC VDS = 160V
Gate-to-Drain ("Miller") Charge — — 9.6 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time — 4.2 — VDD = 100V
Rise Time — 31 — ID = 9.0A
ns
Turn-Off Delay Time — 18 — RG = 6.0Ω
Fall Time — 17 — RD = 11Ω, See Fig. 10
Internal Drain Inductance — 4.5 —
Internal Source Inductance — 7.5 —
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance — 360 — VGS = 0V
Output Capacitance — 91 — pF VDS = 25V
Reverse Transfer Capacitance — 27 — ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 50V, starting TJ = 25°C, L = 6.9mH
DD
RG = 25Ω, I
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
— — 5.2
A
— — 21
Diode Forward Voltage — — 1.8 V TJ = 25°C, IS = 5.2A, VGS = 0V
Reverse Recovery Time — 180 270 ns TJ = 25°C, IF = 5.2A
Reverse Recovery Charge — 1.1 1.7 µC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 5.2A, di/dt ≤ 120A/µs, V
SD
DD
≤ V
(BR)DSS
,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 5.2A. (See Figure 12)
AS
IRL620
I
D
, Drain Current (Amps)
I
D
, Drain Current (Amps)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
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D
I , Drain-to-Source Current (A)
Fig 1. Typical Output Characteristics,
TC = 25oC
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics,
TC = 150oC
Vs. Temperature
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