International Rectifier IRL3714S, IRL3714L, IRL3714 Datasheet
PD - 94175A
IRL3714
SMPS MOSFET
IRL3714S
IRL3714L
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
V
DSS
20V 20mΩ 36A
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
and Current
DS(on)
at 4.5V V
GS
TO-220AB
IRL3714
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 36
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 31 A
I
DM
PD @TC = 25°C Maximum Power Dissipation 47 W
PD @TC = 70°C Maximum Power Dissipation 33 W
Linear Derating Factor 0.31 W/°C
TJ , T
STG
Drain-Source Voltage 20 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 140
Junction and Storage Temperature Range -55 to + 175 °C
R
DS(on)
D2Pak
IRL3714S
max I
TO-262
IRL3714L
D
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case ––– 3.2
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Junction-to-Ambient (PCB mount) ––– 40
Notes through are on page 11
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06/19/01
IRL3714/3714S/3714L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max.Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
––– 15 20 V
––– 21 28 VGS = 4.5V, ID = 14A
mΩ
= 10V, ID = 18A
GS
Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200
µA
nA
V
= 16V, VGS = 0V
DS
VGS = -16V
Forward Transconductance 17 ––– ––– SVDS = 10V, ID = 14A
Total Gate Charge ––– 6.5 9.7 ID = 14A
Gate-to-Source Charge ––– 1.8 ––– nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 2.9 ––– VGS = 4.5V
Output Gate Charge ––– 7.1 ––– VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 8.7 ––– VDD = 10V
Rise Time ––– 78 ––– ID = 14A
Turn-Off Delay Time ––– 10 ––– RG = 1.8Ω
ns
Fall Time ––– 4.5 ––– VGS = 4.5V
Input Capacitance ––– 670 ––– VGS = 0V
Output Capacitance ––– 470 ––– VDS = 10V
Reverse Transfer Capacitance ––– 68 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 72 mJ
Avalanche Current ––– 14 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
36
–––
–––
140
showing the
A
p-n junction diode.
G
––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V
––– 0.88 ––– TJ = 125°C, IS = 18A, VGS = 0V
Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = 18A, VR=10V
Reverse Recovery Charge ––– 34 51 nC di/dt = 100A/µs
Reverse Recovery Time ––– 35 53 ns TJ = 125°C, IF = 18A, VR=10V
Reverse Recovery Charge ––– 35 53 nC di/dt = 100A/µs
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D
S
IRL3714/3714S/3714L
10000
1000
100
10
1
, Drain-to-Source Current (A)
D
0.1
I
VGS
TOP 15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
2.0V
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1000.00
1000
100
10
VGS
TOP 15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
2.0V
1
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
36A
I =
D
)
(Α
2.0
TJ = 25°C
100.00
TJ = 175°C
10.00
, Drain-to-Source Current
D
I
1.00
2.0 4.0 6.0 8.0 10.0
V
= 15V
DS
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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IRL3714/3714S/3714L
)
10000
1000
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
+ Cgd, C
gd
Ciss
Coss
100
C, Capacitance(pF)
10
1 10 100
Crss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000.00
SHORTED
ds
15
D
I =
14
12
9
6
3
GS
V , Gate-to-Source Voltage (V)
0
0 4 8 12 16 20
Q , Total Gate Charge (nC
G
V = 16V
DS
V = 10V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100.00
TJ = 175°C
100
100µsec
10.00
10
1msec
, Reverse Drain Current (A)
1.00
SD
I
0.10
0.0 1.0 2.0 3.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
TJ = 25°C
V
GS
= 0V
1
, Drain-to-Source Current (A)
D
Tc = 25°C
I
Tj = 175°C
Single Pulse
0.1
1 10 100
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10msec
Forward Voltage
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