International Rectifier IRL 3215 PbF Service Manual
PD - 95405
IRL3215PbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
D
V
= 150V
DSS
R
S
= 0.166 Ω
DS(on)
ID = 12A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
TO-220AB
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 12
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 8.5 A
I
DM
PD @TC = 25°C Power Dissipation 80 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 48
Linear Derating Factor 0.53 W/°C
Gate-to-Source Voltage ±16 V
Single Pulse Avalanche Energy 130 mJ
Avalanche Current 7.2 A
Repetitive Avalanche Energy 8.0 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 1.9
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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IRL3215PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.20 ––– V/°C Reference to 25°C, ID = 1mA
J
––– ––– 0.166 VGS = 10V, ID = 7.2A
Static Drain-to-Source On-Resistance
––– ––– 0.184 Ω V
= 5.0V, ID = 7.2A
GS
––– ––– 0.208 VGS = 4.0V, ID = 6A
Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 8.3 ––– ––– S VDS = 25V, ID = 7.2A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
µA
nA
V
= 150V, VGS = 0V
DS
V
= 16V
GS
Total Gate Charge ––– ––– 35 ID = 7.2A
Gate-to-Source Charge ––– ––– 4.1 nC VDS = 120V
Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time ––– 7.4 ––– VDD = 75V
Rise Time ––– 45 –––
Turn-Off Delay Time ––– 38 ––– RG = 12Ω, VGS = 5.0V
ns
ID = 7.2A
Fall Time ––– 36 ––– RD = 10.2Ω, See Fig. 10
Internal Drain Inductance 4.5
Internal Source Inductance ––– 7.5 –––
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
Input Capacitance ––– 775 ––– VGS = 0V
Output Capacitance ––– 140 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 70 ––– ƒ = 1.0MHz, See Fig. 5
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
12
48
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 7.2A, VGS = 0V
Reverse Recovery Time ––– 160 240 ns TJ = 25°C, IF = 7.2A
Reverse RecoveryCharge ––– 810 1210 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
G
S
D
G
S
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 4.9mH
J
= 7.2A. (See Figure 12)
AS
≤ 7.2A, di/dt ≤ 100A/µs, V
DD
≤ V
(BR)DSS
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
,
TJ ≤ 175°C
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IRL3215PbF
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
10
VGS
VGS
TOP 15V
TOP
15V
10V
10V
8.0V
5V
7.0V
4.5V
6.0V
3.5V
5.5V
3V
5.0V
2.75V
BOTTOM
4.5V
BOTTOM 2.50V
20µs PULSE WIDTH
T = 25 C
V , Drain-to-Source Voltage (V)
DS
T = 25 C
J
2.5V
J
°
°
10
1
VGS
VGS
TOP 15V
TOP
15V
10V
10V
8.0V
7.0V
4.5V
6.0V
3.5V
5.5V
5.0V
2.75V
BOTTOM
4.5V
BOTTOM 2.50V
5V
3V
2.5V
0.1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
0.01
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
T = 175 C
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
2.5
I =
D
12A
T = 175 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
2.0 3.0 4.0 5.0 6.0 7.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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