International Rectifier IRL3103S, IRL3103L Datasheet
PD - 94162
IRL3103S
l Advanced Process Technology
l Surface Mount (IRL3103S)
l Low-profile through-hole (IRL3103L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
HEXFET® Power MOSFET
D
G
S
IRL3103L
V
= 30V
DSS
DS(on)
I
= 64A
D
= 12mΩ
R
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRL3103L) is available for lowprofile applications.
D2Pak
IRL3103S
TO-262
IRL3103L
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 64
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 45 A
I
DM
PD @TC = 25°C Power Dissipation 94 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 220
Linear Derating Factor 0.63 W/°C
Gate-to-Source Voltage ± 16 V
Avalanche Current 34 A
Repetitive Avalanche Energy 22 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
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Junction-to-Case ––– 1.6
Junction-to-Ambient (PCB mount)** ––– 40
°C/W
02/14/02
IRL3103S/IRL3103L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 175°C
Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 12 V
––– ––– 16 VGS = 4.5V, ID = 28A
mΩ
= 10V, ID = 34A
GS
Gate Threshold Voltage 1.0 ––– ––– VVDS = VGS, ID = 250µA
Forward Transconductance 22 ––– ––– SVDS = 25V, ID = 34A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100
µA
nA
= 30V, VGS = 0V
V
DS
VGS = -16V
Total Gate Charge ––– ––– 33 ID = 34A
Gate-to-Source Charge ––– ––– 5.9 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– ––– 17 VGS = 4.5V, See Fig. 6 and 13
Turn-On Delay Time ––– 8.9 ––– VDD = 15V
Rise Time ––– 120 ––– ID = 34A
Turn-Off Delay Time ––– 14 ––– RG = 1.8Ω
Fall Time ––– 9.1 ––– VGS = 4.5V, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1650 ––– VGS = 0V
Output Capacitance ––– 650 ––– VDS = 25V
Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 1320130 mJ I
= 34A, L = 0.22mH
AS
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
64
220
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 34A, VGS = 0V
Reverse Recovery Time ––– 57 86 ns TJ = 25°C, IF = 34A
Reverse Recovery Charge ––– 110 170 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
= 25°C, L = 220µH
J
= 34A, VGS=10V (See Figure 12)
AS
≤ 34A, di/dt ≤ 120A/µs, V
DD
≤ V
(BR)DSS
,
operation outside rated limits.
This is a calculated value limited to T
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994
= 175°C .
J
D
G
S
D
G
S
2 www.irf.com
IRL3103S/IRL3103L
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
56A
I =
D
°
T = 25 C
J
100
10
D
I , Drain-to-Source Current (A)
1
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V , Gate-to-Source Voltage (V)
GS
T = 175 C
J
V = 15V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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