International Rectifier IRL3103D1S Datasheet
FETKYTM MOSFET & SCHOTTKY RECTIFIER
l Co-packaged HEXFET
and Schottky Diode
l Generation 5 Technology
l Logic Level Gate Drive
l Minimize Circuit Inductance
l Ideal For Synchronous Regulator Application
Description
The FETKY family of co-packaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5 MOSFET
with a low forward voltage drop Schottky diode and
minimized component interconnect inductance and
resistance result in maximized converter efficiencies.
2
The D
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
2
D
Pak is suitable for high current applications because
of its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
®
Power MOSFET
PD- 9.1558A
IRL3103D1S
D
V
= 30V
DSS
R
G
S
2
D P a k
DS(on)
ID = 64A
= 0.014Ω
TO-262
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 64
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 45 A
I
DM
PD @TA = 25°C Power Dissipation 3.1 W
PD @TC = 25°C Power Dissipation 89 W
V
GS
T
J
T
STG
Pulsed Drain Current 220
Linear Derating Factor 0.56 W/°C
Gate-to-Source Voltage ± 16 V
Operating Junction and -55 to + 150
Storage Temperature Range ° C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 1.4
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 °C/W
4/2/98
IRL3103D1S
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
C
iss
Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.014 VGS = 10V, ID = 34A
––– ––– 0.019
Ω
VGS = 4.5V, ID = 28A
Gate Threshold Voltage 1. 0 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 23 ––– ––– S VDS = 25V, ID = 34A
Drain-to-Source Leakage Current
––– ––– 0.10
––– ––– 22 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
VDS = 30V, VGS = 0V
mA
VGS = 16V
nA
Total Gate Charge ––– ––– 43 ID = 32A
Gate-to-Source Charge ––– ––– 14 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 4.5V, See Fig. 6
Turn-On Delay Time ––– 9.0 ––– VDD = 15V
Rise Time ––– 210 –––
Turn-Off Delay Time ––– 20 ––– RG = 3.4Ω, VGS =4.5V
ns
ID = 32A
Fall Time ––– 54 ––– RD = 0.43 Ω,
Internal Source Inductance ––– 7.5 –––
Between lead,
nH
and center of die contact
Input Capacitance ––– 1900 ––– VGS = 0V
Output Capacitance –– – 810 – –– VDS = 25V
Reverse Transfer Capacitance ––– 240 ––– ƒ = 1.0MHz, See Fig. 5
Input Capacitance ––– 3500 ––– VGS = 0V, VDS = 0V
Body Diode & Schottky Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IF (AV) ( Schottky) MOSFET symbol
I
SM
V
SD1
V
SD2
t
rr
Q
rr
t
on
Pulsed Source Current integral reverse
(Body Diode)
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 32A, VGS = 0V
Diode Forward Voltage ––– ––– 0.50 V TJ = 25°C, IS = 1.0A, VGS = 0V
Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = 32A
Reverse Recovery Charge ––– 49 73 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer
to application note #AN-994.
Uses IRL3103D1 data and test conditions
2.0
––––––
220
showing the
A
p-n junction and Schottky diode.
D
G
S
IRL3103D1S
)
A
)
A
A
)
A
)
1000
VGS
TOP 15V
1 2V
1 0V
8 .0V
6 .0V
4 .0V
3 .0V
BOTTOM 2.5V
100
10
D
I , Drain-to-Source Current (A)
2.5V
20µs PULSE WIDTH
T = 25°C
1
0.1 1 10 100
V , Dr a in-t o-So u rc e Vo ltage (V
DS
J
Fig 1. Typical Output Characteristics
30
VGS B
TOP 10V
8.0V
6.0V
4.0V
2.0V
BOTTOM 0.0V
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
2.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
1
0.1 1 10 10 0
V , Drain-to-Source Voltage (V
DS
J
Fig 2. Typical Output Characteristics
30
VGS
TOP 10V
8.0V
6.0V
4.0V
2.0V
BOTTOM 0.0V
20
10
S
I , Source-to-Drain Current (A)
0.0V
20µs PULSE WIDTH
T = 25°C
0
0.0 0.2 0.4 0.6 0.8 1.0
V , Source-to-Drain Voltage (V
SD
J
Fig 3. Typical Reverse Output Characteristics
20
10
S
I , Source-to-Drain Current (A)
0.0V
20µs PULSE WIDTH
T = 150°C
0
0 0.2 0.4 0.6 0.8
V , Source-to-Drain Voltage (V
SD
J
Fig 4. Typical Reverse Output Characteristics
Loading...