International Rectifier IRL3103D1 Datasheet
FETKYTM MOSFET & SCHOTTKY RECTIFIER
TO-220AB
l Copackaged HEXFET
and Schottky Diode
l Generation 5 Technology
l Logic Level Gate Drive
l Minimize Circuit Inductance
l Ideal For Synchronous Regulator Application
Description
The FETKY family of copackaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5
MOSFET with a low forward voltage drop Schottky
diode and minimized component interconnect
inductance and resistance result in maximized
converter efficiencies.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
®
Power MOSFET
PD 9.1608C
IRL3103D1
D
V
= 30V
DSS
R
G
S
DS(on)
ID = 64A
= 0.014Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 64
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 45 A
I
DM
PD @TA = 25°C Power Dissipation 2.0 W
PD @TC = 25°C Power Dissipation 89 W
V
GS
T
J
T
STG
Pulsed Drain Current 220
Linear Derating Factor 0.56 W/°C
Gate-to-Source Voltage ± 16 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 1.4
Junction-to-Ambient ––– 62 °C/W
°C
12/16/97
IRL3103D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
iss
Drain-to-Source Breakdown Voltage 30 – –– – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.014 VGS = 10V, ID = 34A
––– ––– 0.019
Ω
VGS = 4.5V, ID = 28A
Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 23 ––– ––– S VDS = 25V, ID = 32A
Drain-to-Source Leakage Current
––– ––– 0.10
––– ––– 22 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
VDS = 30V, VGS = 0V
mA
VGS = 16V
nA
Total Gate Charge ––– ––– 43 ID = 32A
Gate-to-Source Charge ––– ––– 14 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 4.5V, See Fig. 6
Turn-On Delay Time ––– 9.0 ––– VDD = 15V
Rise Time ––– 210 –––
Turn-Off Delay Time ––– 20 ––– RG = 3.4Ω, VGS =4.5V
ns
ID = 32A
Fall Time ––– 54 ––– RD = 0.43 Ω,
Internal Drain Inductance
Internal Source Inductance 7.5
––– –––
4.5
–––
–––
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
Input Capacitance ––– 1900 ––– VGS = 0V
Output Capacitance ––– 810 ––– VDS = 25V
Reverse Transfer Capacitance ––– 240 ––– ƒ = 1.0MHz, See Fig. 5
pF
Input Capacitance ––– 3500 ––– VGS = 0V, VDS = 0V
D
G
S
Body Diode & Schottky Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IF (AV) ( Schottky) MOSFET symbol
I
SM
Pulsed Source Current integral reverse
(Body Diode)
V
SD1
V
SD2
t
rr
Q
rr
t
on
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 32A, VGS = 0V
Diode Forward Voltage ––– ––– 0.50 V TJ = 25°C, IS = 1.0A, VGS = 0V
Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = 32A
Reverse Recovery Charge ––– 49 73 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
––– –––
Notes:
Repetitive rating; pulse width limited by
Uses IRL3103 data and test conditions
max. junction temperature. ( See fig. 10 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
–––
2.0
220
showing the
A
p-n junction and Schottky diode.
D
G
S
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