International Rectifier IRL3103 Datasheet
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
®
Power MOSFETs from International
PD - 91337
IRL3103
HEXFET® Power MOSFET
D
G
S
TO-220AB
V
R
DS(on)
= 30V
DSS
= 12mΩ
ID = 64A
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 64
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 45 A
I
DM
PD @TC = 25°C Power Dissipation 94 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 220
Linear Derating Factor 0.63 W/°C
Gate-to-Source Voltage ± 16 V
Avalanche Current 34 A
Repetitive Avalanche Energy 22 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
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Junction-to-Case ––– 1.6
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
3/16/01
IRL3103
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 175°C
Drain-to-Source Breakdown Voltage 30 –– – – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 12 VGS = 10V, ID = 34A
––– ––– 16 VGS = 4.5V, ID = 28A
mΩ
Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 22 ––– ––– S VDS = 25V, ID = 34A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 30V, VGS = 0V
µA
nA
VGS = -16V
Total Gate Charge ––– ––– 3 3 ID = 34A
Gate-to-Source Charge ––– ––– 5.9 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– –– – 17 VGS = 4.5V, See Fig. 6 and 13
Turn-On Delay Time ––– 8.9 ––– VDD = 15V
Rise Time ––– 120 ––– ID = 34A
Turn-Off Delay Time ––– 14 ––– RG = 1.8Ω
Fall Time ––– 9.1 ––– VGS = 4.5V, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1650 ––– VGS = 0V
Output Capacitance ––– 650 ––– VDS = 25V
Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 1320130 mJ I
= 34A, L = 0.22mH
AS
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
64
220
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 34A, VGS = 0V
Reverse Recovery Time ––– 57 86 ns TJ = 25°C, IF = 34A
Reverse Recovery Charge ––– 110 170 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
= 25°C, L = 220µH
J
= 34A, VGS=10V (See Figure 12)
AS
≤ 34A, di/dt ≤ 120A/µs, V
DD
≤ V
(BR)DSS
,
operation outside rated limits.
This is a calculated value limited to T
= 175°C .
J
D
G
S
D
G
S
2 www.irf.com
IRL3103
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
56A
I =
D
°
T = 25 C
J
100
10
D
I , Drain-to-Source Current (A)
1
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V , Gate-to-Source Voltage (V)
GS
T = 175 C
J
V = 15V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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