International Rectifier IRL3102S Datasheet
PD 9.1691A
PRELIMINARY
l Advanced Process Technology
l Surface Mount
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
2
Pak is a surface mount power package capable
The D
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
2
Pak is suitable for high current applications because
D
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
IRL3102S
HEXFET® Power MOSFET
D
V
= 20V
DSS
G
R
S
2
D Pak
DS(on)
ID = 61A
= 0.013W
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 61
ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V 39 A
I
DM
PD @TC = 25°C Power Dissipation 89 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 240
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 10 V
Single Pulse Avalanche Energy 220 mJ
Avalanche Current 35 A
Repetitive Avalanche Energy 8.9 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
qJC
R
q JA
Junction-to-Case ––– 1.4
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 °C/W
°C
9/16/97
IRL3102S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
DV
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
/DT
Breakdown Voltage Temp. Coefficient ––– 0.016 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.015 VGS = 4.5V, ID = 37A
––– ––– 0.013
W
VGS = 7.0V, ID = 37A
Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 36 ––– ––– S VDS = 16V, ID = 35A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 10V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
VDS = 20V, VGS = 0V
µA
VGS = 10V
nA
Total Gate Charge ––– ––– 58 ID = 35A
Gate-to-Source Charge ––– ––– 14 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 4.5V, See Fig. 6
Turn-On Delay Time ––– 10 ––– VDD = 10V
Rise Time ––– 130 –––
Turn-Off Delay Time ––– 80 ––– RG = 9.0W, VGS = 4.5V
ns
ID = 35A
Fall Time ––– 110 ––– RD = 0.28W,
Between lead,
Internal Source Inductance ––– 7.5 –––
nH
and center of die contact
Input Capacitance ––– 2500 ––– VGS = 0V
Output Capacitance ––– 1000 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 360 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25W, I
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
61
240
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 37A, VGS = 0V
Reverse Recovery Time ––– 59 88 ns TJ = 25°C, IF = 35A
Reverse Recovery Charge ––– 110 160 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
£ 35A, di/dt £ 100A/µs, V
SD
DD
£ V
TJ £ 150°C
= 25°C, L = 0.36mH
J
= 35A.
AS
Pulse width £ 300µs; duty cycle £ 2%.
Uses IRL3102 data and test conditions
(BR)DSS
,
D
G
S
`
IRL3102S
1000
VGS
TOP
TOP 10V
BOTTOM 2.5V
BOTTOM
VGS
15V
12V
8.0V
10V
6.0V
8.0V
4.0V
6.0V
4.0V
3.0V
3.0V
2.5V
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
1000
2.5V
20µs PULSE WIDTH
T = 25 C
J
°
1000
VGS
VGS
TOP
15V
TOP 10V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM
2.5V
8.0V
6.0V
4.0V
3.0V
100
2.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
10
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
61A
°
T = 25 C
J
100
10
D
I , Drain-to-Source Current (A)
1
2 3 4 5 6 7
V , Gate-to-Source Voltage (V)
GS
°
T = 150 C
J
V = 15V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
4.5V
Loading...