International Rectifier IRL3102 Datasheet
PD- 9.1694A
PRELIMINARY
IRL3102
HEXFET® Power MOSFET
l Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
G
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 61
ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V 39 A
I
DM
PD @TC = 25°C Power Dissipation 89 W
V
GS
V
GSM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 240
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 10 V
Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy 220 mJ
Avalanche Current 35 A
Repetitive Avalanche Energy 8.9 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 1.4
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
D
S
TO-220AB
R
DS(on)
V
= 20V
DSS
= 0.013Ω
ID = 61A
°C
11/18/97
IRL3102
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.016 –– – V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.015 VGS = 4.5V, ID = 37A
––– ––– 0.013
Ω
VGS = 7.0V, ID = 37A
Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 36 ––– ––– S VDS = 16V, ID = 35A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 10V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
VDS = 20V, VGS = 0V
µA
VGS = 10V
nA
Total Gate Charge ––– ––– 58 ID = 35A
Gate-to-Source Charge ––– ––– 14 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– – –– 21 VGS = 4.5V, See Fig. 6
Turn-On Delay Time ––– 10 ––– VDD = 10V
Rise Time ––– 130 –––
Turn-Off Delay Time ––– 80 – –– RG = 9.0Ω, VGS = 4.5V
ns
ID = 35A
Fall Time ––– 110 ––– RD = 0.28Ω,
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 2500 ––– VGS = 0V
Output Capacitance ––– 1000 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 360 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 37A, VGS = 0V
Reverse Recovery Time ––– 59 88 n s TJ = 25°C, IF = 35A
Reverse Recovery Charge ––– 110 160 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 35A, di/dt ≤ 100A/µs, V
SD
TJ ≤ 150°C
= 25°C, L = 0.36mH
J
= 35A.
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
61
240
showing the
A
p-n junction diode.
≤ V
DD
(BR)DSS
D
G
S
,
IRL3102
1000
VGS
VGS
TOP
15V
TOP 10V
12V
8.0V
10V
6.0V
8.0V
4.0V
6.0V
3.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM
2.5V
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
1000
2.5V
20µs PULSE WIDTH
T = 25 C
J
°
1000
VGS
VGS
TOP
15V
TOP 10V
12V
8.0V
10V
6.0V
8.0V
4.0V
6.0V
4.0V
3.0V
3.0V
BOTTOM 2.5V
BOTTOM
2.5V
100
2.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
10
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
61A
°
T = 25 C
J
100
10
D
I , Drain-to-Source Current (A)
1
2 3 4 5 6 7
V , Gate-to-Source Voltage (V)
GS
°
T = 150 C
J
V = 15V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
4.5V
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