International Rectifier IRL2203NL, IRL2203NS Datasheet

PD - 94394

IRL2203NS

IRL2203NL

HEXFET® Power MOSFET

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

G

D

R

DS(on)

V

DSS

= 30V

= 7.0mΩ

ID = 116A

S

Description

Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on­resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL2203NL) is available for low-profile applications.

D2Pak

IRL2203NS

TO-262

IRL2203NL

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 116
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 82 A
I

DM

PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 180 W

V

GS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  400

Linear Derating Factor 1.2 W/°C
Gate-to-Source Voltage ± 16 V
Avalanche Current 60 A
Repetitive Avalanche Energy 18 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

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Junction-to-Case ––– 0.85
Junction-to-Ambient(PCB Mounted,steady-state) ––– 40

°C/W

02/18/02

IRL2203NS/IRL2203NL

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

E

AS

Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– ––– 7.0 V
––– ––– 10 VGS = 4.5V, ID = 48A 

mΩ

= 10V, ID = 60A 

GS

Gate Threshold Voltage 1.0 ––– ––– VVDS = VGS, ID = 250µA
Forward Transconductance 73 ––– ––– SVDS = 25V, ID = 60A

Drain-to-Source Leakage Current

––– ––– 25
––– ––– 250 VDS = 24V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 30V, VGS = 0V

µA

nA

VGS = -16V
Total Gate Charge ––– ––– 60 ID = 60A
Gate-to-Source Charge ––– ––– 14 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– ––– 33 VGS = 4.5V, See Fig. 6 and 13
Turn-On Delay Time ––– 11 ––– VDD = 15V
Rise Time ––– 160 ––– ID = 60A
Turn-Off Delay Time ––– 23 ––– RG = 1.8Ω
Fall Time ––– 66 ––– VGS = 4.5V, See Fig. 10 

Internal Drain Inductance ––– 4.5 –––

Internal Source Inductance ––– 7.5 –––

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 3290 ––– VGS = 0V
Output Capacitance ––– 1270 ––– VDS = 25V
Reverse Transfer Capacitance ––– 170 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 1320290 mJ I

= 60A, L = 0.16mH

AS

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)

––– –––

––– –––

116

400

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 60A, VGS = 0V 
Reverse Recovery Time ––– 56 84 ns TJ = 25°C, IF = 60A
Reverse Recovery Charge ––– 110 170 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

I

AS

 I

SD

= 25°C, L = 0.16mH RG = 25Ω,

J

= 60A, VGS=10V (See Figure 12)

≤ 60A, di/dt ≤ 110A/µs, V

DD

≤ V

(BR)DSS

TJ ≤ 175°C

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 This is a typical value at device destruction and represents

operation outside rated limits.

 This is a calculated value limited to T

= 175°C .

J

 Calculated continuous current based on maximum allowable

,

junction temperature. Package limitation current is 75A.

 When mounted on 1" square PCB (FR-4 or G-10 Material). For

recommended footprint and soldering techniques refer to

application note #AN-994.

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D

S

IRL2203NS/IRL2203NL

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

1000

VGS

TOP

15V
10V

4.5V

3.7V

3.5V

3.3V



3.0V

BOTTOM

2.7V

2.7V

20µs PULSE WIDTH



T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V
10V

4.5V

3.7V

3.5V

3.3V



3.0V

BOTTOM

2.7V

2.7V

20µs PULSE WIDTH



T = 175 C

V , Drain-to-Source Voltage (V)

DS

°

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

100A

I =



D

°

T = 25 C



J

T = 175 C



J

100

D

I , Drain-to-Source Current (A)

V = 15V

DS



10

2.0 3.0 4.0 5.0 6.0 7.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

°

2.0

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =



10V

GS

°

Vs. Temperature

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