International Rectifier IRKT50016, IRKT50014, IRKT50012, IRKT50008, IRKH50016 Datasheet
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500 A
THYRISTOR / DIODE and
THYRISTOR / THYRIST OR
Bulletin I27401
1
IRK.500.. SERIES
SUPER MAGN-A-PAKTM Power Modules
Features
High current capability
3000 V
RMS
isolating voltage with non-toxic substrate
High surge capability
Industrial standard package
UL recognition pending
Typical Applications
Motor starters
DC motor controls - AC motor controls
Uninterruptable power supplies
Major Ratings and Characteristics
Parameters IRK.500.. Units
I
T(AV)
or I
F(AV)
500 A
@ T
C
82 °C
I
T(RMS)
900 A
@ T
C
82 °C
I
TSM
or I
FSM
@ 50Hz 17.8 KA
@ 60Hz 18.7 KA
I2t @ 50Hz 1591 KA2s
@ 60Hz 1452 KA2s
I2√t 15910 KA2√s
V
DRM /VRRM
range 800 to 1600 V
T
STG
range - 40 to 150 °C
T
J
range - 40 to 130 °C
IRK.500.. Series
2
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
RRM
, maximum repetitive V
RSM
, maximum non- I
RRM
max.
Type number Code peak reverse voltage repetitive peak rev. voltage @ T
J
= T
J
max.
VVmA
08 800 900
12 1200 1300
14 1400 1500
16 1600 1700
IRK.500.. 100
I
T(AV)
Maximum average on-state current 500 A 180° conduction, half sine wave
I
F(AV)
@ Case temperature 82 °C
I
T(RMS)
Maximum RMS on-state current 900 A 180° conduction, half sine wave @ TC = 82°C
I
TSM
Maximum peak, one-cycle, 17.8 KA t = 10ms No voltage
I
FSM
non-repetitive surge current 18.7 t = 8.3ms reapplied
15.0 t = 10ms 100% V
RRM
15.7 t = 8.3ms reapplied Sinusoidal half wave,
I
2
t Maximum I2t for fusing 1591 KA2s t = 10ms No voltage Initial TJ = TJ max.
1452 t = 8.3ms reapplied
1125 t = 10ms 100% V
RRM
1027 t = 8.3ms reapplied
I
2
√t Maximum I2√t for fusing 15910 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold voltage 0.85 V (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
V
T(TO)2
High level value of threshold voltage 0.93 (I > π x I
T(AV)
), TJ = TJ max.
r
t1
Low level value of on-state slope resistance 0.36 mΩ (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
r
t2
High level value of on-state slope resistance 0.32 (I > π x I
T(AV)
), TJ = TJ max.
V
TM
Maximum on-state or forward 1.50 V Ipk = 1500A, TJ = 25°C, tp = 10ms sine pulse
V
FM
voltage drop
I
H
Maximum holding current 500 mA TJ = 25°C, anode supply 12V resistive load
I
L
Typical latching current 1000
Parameter IRK.500.. Units Conditions
On-state Conduction
di/dt Maximum rate of rise of turned-on 1000 A/µs TJ = TJ max., ITM = 400A, V
DRM
applied
current
t
d
Typical delay time 2.0 µ s Gate current 1A, dig/dt = 1A/µs
V
d
= 0.67% V
DRM
, TJ = 25°C
t
q
Typical turn-off time 200 µs ITM = 750A, TJ = TJ max, di/dt = -60A/µs,
V
R
= 50V, dv/dt = 20V/µs, Gate 0 V 100Ω
Parameter IRK.500.. Units Conditions
Switching
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