Bulletin I27132 rev. D 09/97
IRK.71, .91 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Electrically isolated: DBC base plate
3500 V
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
isolating voltage
RMS
Description
These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configurations. The semiconductor chips are electrically
isolated from the base plate, allowing common
heatsinks and compact assemblies to be built.
They can be interconnected to form single phase or
three phase bridges or AC controllers. These
modules are intended for general purpose high
voltage applications such as high voltage regulated
power supplies, lighting circuits, and temperature
and motor speed control circuits.
Major Ratings and Characteristics
Parameters IRK.71 IRK.91 Units
I
or I
T(AV)
F(AV)
@ 85°C
I
(*) 165 210 A
O(RMS)
I
@ 50Hz 1665 1785 A
TSM
@ 60Hz 1740 1870 A
I
FSM
2
I
t @ 50Hz 13.86 15.91 KA2s
@ 60Hz 12.56 14.52 KA
I2√t 138.6 159.1 KA2√s
V
range 400 to 1600 V
RRM
T
STG
T
J
(*) As AC switch.
75 95 A
- 40 to 125
- 40 to125
2
s
o
C
o
C
NEW ADD-A-pakTM Power Modules
75 A
95 A
1
IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
V
, maximum V
RRM
Type number
Voltage repetitive non-repetitive peak off-state voltage,I
Code peak reverse voltagepeak reverse voltage gate open circuit 125°C
-VVVmA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.71/ .91 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
On-state Conduction
Parameters IRK.71 IRK.91 Units Conditions
I
Max. average on-state
T(AV)
current (Thyristors) 180
Max. average forward TC = 85oC
I
F(AV)
current (Diodes)
Max. continuous RMS
I
O(RMS)
on-state current. 165 210
As AC switch
I
Max. peak, one cycle 1665 1785 t=10msNo voltage
TSM
or non-repetitive on-state 1740 1870 t=8.3msreapplied
or forward current 1400 1500 t=10ms100% V
I
FSM
2
t Max. I2t for fusing 13.86 15.91 t=10msNo voltage
I
2
√t Max. I2√t for fusing (1) 138.6 159.1 KA2√s t=0.1 to 10ms, no voltage reapplied
I
Max. value of threshold 0.82 0.80 Low level (3)
V
T(TO)
voltage (2) 0.85 0.85 High level (4)
Max. value of on-state 3.00 2.40 Low level(3)
r
t
slope resistance (2) 2.90 2.25 High level (4)
Max. peak on-state or I
V
TM
VFMforward voltage I
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 V
of rise of turned on 150 A/µs I
current t
Max. holding current 200 TJ = 25oC, anode supply = 6V,
I
H
Max. latching current 400 TJ = 25oC, anode supply = 6V, resistive load
I
L
(1) I2t for time t
(4) I > π x I
AV
= I2√t
x √tx(2) Average power = V
x
75 95
1470 1570 t=8.3msreapplied
1850 2000 t=10msT
1940 2100 t=8.3msno voltage reapplied
12.56 14.52 t=8.3msreapplied
9.80 11.25 t=10ms100% V
8.96 10.27 t=8.3msreapplied
17.11 20.00 t=10msT
15.60 18.30 t= 8.3msno voltage reapplied
1.59 1.58 V
x I
T(TO)
T(AV)
2
, maximum V
RSM
A
KA2s
V
mΩ
mA
+ r
x (I
t
T(RMS)
, max. repetitiveI
DRM
o
conduction, half sine wave,
or
I
(RMS)
Sinusoidal
half wave,
RRM
Initial T
= 25oC,
J
Initial TJ = TJ max.
RRM
= 25oC,
J
= TJ max
T
J
T
= TJ max
J
= π x I
TM
T(AV)
= π x I
FM
F(AV)
=π x I
T(AV)
, I
TM
< 0.5 µs, tp > 6 µs
r
= 500mA,
g
T
DRM
= 25°C
J
,
resistive load, gate open circuit
2
)
(3) 16.7% x π x I
< I < π x I
AV
RRM
DRM
I
(RMS)
= TJ max.
J
AV
Triggering
Parameters IRK.71 IRK.91 Units Conditions
Max. peak gate power 12 12
P
GM
Max. average gate power 3.0 3.0
P
G(AV)
Max. peak gate current 3.0 3.0 A
I
GM
Max. peak negative
-V
GM
gate voltage
Max. gate voltage 4.0 TJ = - 40°C
V
GT
required to trigger 2.5 T
10
1.7 T
Max. gate current 270 TJ = - 40°C
I
GT
required to trigger 150 mA T
80 T
V
Max. gate voltage T
GD
that will not trigger rated V
Max. gate current TJ = 125oC,
I
GD
that will not trigger rated V
0.25 V
6mA
W
V
Blocking
Parameters IRK.71 IRK.91 Units Conditions
I
Max. peak reverse and
RRM
off-state leakage current
I
V
DRM
INS
, V
at V
RRM
DRM
RMS isolation voltage V
dv/dtMax. critical rate of rise T
of off-state voltage (5) gate open circuit
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16 S90.
15 mA T
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
500 V/µs
IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
DRM
DRM
applied
applied
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
= 25°C
J
= 125°C
J
= 25°C
J
= 125°C
J
= 125oC,
J
= 125 oC, gate open circuit
J
= 125oC, linear to 0.67 V
J
DRM
,
Thermal and Mechanical Specifications
Parameters IRK.71 IRK.91 Units Conditions
T
Junction operating
J
temperature range
Storage temp. range - 40 to 125
T
stg
Max. internal thermal
R
thJC
resistance, junction 0.165 0.135 Per module, DC operation
to case
Typical thermal resistance
R
thCS
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar 3
wt Approximate weight 83 (3) g (oz)
Case style TO-240AA JEDEC
- 40 to 125
0.1
5
°C
K/W
Nm
Mounting surface flat, smooth and greased.
Flatness < 0.03 mm; roughness < 0.02 mm
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
3
IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
Devices Units
180
Sine half wave conduction Rect. wave conduction
o
120
o
o
90
o
60
IRK.71 0.06 0.07 0.09 0.12 0.18 0.04 0.08 0.10 0.13 0.18
IRK.91 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12
Outlines Table
IRKT../.. (*)
18 REF.
Screws M5 x 0.8
30 ± 0.5
(1.18 ± 0.02 )
20. 5 ± 0.75
(0.81 ± 0.03)
29 ± 0.5
(1.13 ± 0.02)
1
15 ± 0.5
(0.59 ± 0.02)
IRKL../.. (*)
(0.71)
2
20 ± 0.5
(0.79 ± 0.02)
92 ± 0.5
(3.62 ± 0.02)
15.5 ± 0.5
(0.61 ± 0.02)
6.3 ± 0.3
(0.25 ± 0.01)
3
20 ± 0.5
(0.79 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
Screws M5 x 0.8
Faston tab. 2.8 x 0.8
576
4
(0.11 x 0.03)
24 ± 0.5
6.1 ± 0.3
(0.24 ± 0.01)
when devices operate at different conduction angles than DC)
thJC
o
30
180o120
o
o
90
IRKH../.. (*)
15.5 ± 0.5
1
(0.59 ± 0.02)
(0.11 x 0.03)
18 REF.
(0.71)
15 ± 0.5
2
20 ± 0.5
(0.79 ± 0.02)
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
(0.61 ± 0.02)
6.3 ± 0.3
(0.25 ± 0.01)
3
(0.79 ± 0.02)
80 ± 0.3
5.8 ± 0.25
(0.94 ± 0.02 )
(0 . 2 3 ± 0.01)
18 REF.
(0.71)
Screws M5 x 0.8
30 ± 0.1
30 ± 0.5
29 ± 0.5
(1.18 ± 0.04 )
(1.18 ± 0.02)
(1.13 ± 0. 02)
(0.16 ± 0.01)
Pitch 4.0 ± 0. 2
20.5 ± 0.75
(0.81 ± 0.03)
15.5 ± 0.5
(0.61 ± 0.02)
Faston tab. 2.8 x 0.8
o
60
5
4
20 ± 0.5
o
30
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
24 ± 0.5
6.1 ± 0.3
(0.24 ± 0.01 )
(0.94 ± 0.02)
°C/W
30 ± 0.1
Pi tch 4.0 ± 0.2
(1.18 ± 0.04 )
(0.16 ± 0.01)
30 ± 0.5
29 ± 0.5
(1.18 ± 0.02)
(1.13 ± 0.02)
6.3 ± 0.3
(0.25 ± 0.01)
2
3
76
20.5 ± 0.75
(0.81 ± 0.03)
1
15 ± 0.5
(0.59 ± 0.02)
(3.62 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
(3.15 ± 0.01)
92 ± 0.5
20 ± 0.5
(0.79 ± 0.02)
80 ± 0.3
24 ± 0.5
6.1 ± 0.3
(0.24 ± 0.01)
All dimensions in millimeters (inches)
(*) For terminals connections, see Circuit configurations Table
NOTE: To order the Optional Hardware see Bulletin I27900
4
30 ± 0.1
(1.18 ± 0.04)
(0.94 ± 0.02 )
(0.1 6 ± 0.01)
Pitch 4.0 ± 0.2
Circuit Configurations Table
)
)
IRKT IRKH IRKL
(1)
~
IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
(1)
~
(1)
~
+
(2)
-
(3)
K1G1
K2G2
(4)(5) (7)(6)
G1
(4)(5)
K1
Ordering Information Table
Device Code
IRK T 91 / 16S90
1 2
1- Module type
2 - Circuit configuration (See Circuit Configuration table)
3 - Current code * *
4 - Voltage code(See Voltage Ratings table)
5 - dv/dt code: S90 = dv/dt 1000 V/µs
34
5
No letter = dv/dt 500 Vµs
+
(2)
-
(3)
+
(2)
-
(3)
K2
(7)G2(6)
IRK.92 types
With no auxiliary cathode
64
13.8 (0.53)
* *Available with no auxiliary cathode.
To specify change: 71 to 72
91 to 92
e.g. : IRKT92/16 etc.
130
120
IRK.71.. Series
R (DC) = 0.33 K/W
thJC
110
100
90
30°
80
70
Maximum Allowable Case Temperature (°C
0102030405060708
Average On-state Current (A)
Conduction Angle
60°
90°
120°
180°
0
130
120
IRK.71.. Series
R (DC) = 0.33 K/W
thJC
110
Conduction Period
100
90
30°
60°
80
70
Maximum Allowable Case Temperature (°C
0204060801001
90°
120°
Average On-state Current (A)
180°
DC
20
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
5
IRK.71, .91 Series
)
)
)
)
Bulletin I27132 rev. D 09/97
120
180°
100
80
60
40
20
0
Maximum Average On-state Power Loss (W
120°
90°
60°
30°
RMS Limit
Conduction Angle
IRK.71.. Series
Per Junction
T = 125°C
J
010203040506070
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
1600
At Any Rated Load Condition And With
1500
1400
1300
Rated V Applied Following Surge.
RRM
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1200
1100
1000
900
IRK.71.. Series
800
Peak Half Sine Wave On-state Current (A
Per Junction
700
1101
Number Of Equal Amplitude Half Cycle Current Pulses (N)
80
00
140
DC
180°
120
120°
100
90°
60°
30°
80
RMS Limit
60
40
20
0
Maximum Average On-state Power Loss (W
0 20 40 60 80 100 120
Conduction Period
IRK.71.. Series
Per Junction
T = 125°C
J
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
1800
Maximum Non Repetitive Surge Current
1600
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
1400
No Voltage Reapplied
Rated V Reapplied
1200
1000
800
IRK.71.. Series
Peak Half Sine Wa ve On-state Current (A
Per Junction
600
0.01 0.1
Pulse Train Duration (s)
J
RRM
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
1
250
180°
120°
200
90°
60°
30°
150
100
Conduction Angle
50
Maximum Total On-state Power Loss (W)
0
0 20 40 60 80100120140160180
Total RMS Output Current (A)
IRK.71.. Series
Per Module
T = 125°C
J
0
.
3
0
.
4
K
/
0
.
5
K
/
0.
7
K/
1
K
/
W
1
.
5
K
/
3
K
/
W
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C
R
0
.
2
t
h
K
S
/
A
W
K
/
W
W
W
W
W
=
0
.
1
K
/
W
-
D
e
l
t
a
R
)
Fig. 7 - On-state Power Loss Characteristics
6
600
)
)
500
400
180°
(Sine)
180°
(Rect)
300
200
2 x IRK.71.. Series
100
Maximum Total Power Loss (W)
0
0 20 40 60 80100120140160180
Single Phase Bridge
Connected
T = 125°C
J
Total Output Current (A)
Fig. 8 - On-state Power Loss Characteristics
800
700
600
500
400
120°
(Rect)
300
200
Maximum Total Power Loss (W)
100
0
0 40 80 120 160 200 240
3 x IRK.71.. Series
Three Phase Bridge
Connected
T = 125°C
J
Total Output Current (A)
Fig. 9 - On-state Power Loss Characteristics
IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
R
t
h
S
A
=
0.1
K/W
0
.
2
0
.
3
0
.
5
1
K
2
K
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C
0
.
2
0
.
3
0
.
5
1
K
020406080100120140
Maximum Allowable Ambient Temperature (°C
- Delta R
K
/
W
K
/
W
K
/
W
/
W
/
W
R
t
h
S
A
=
0
.
1
K
/
W
-
K
/
W
K
/
W
K
/
W
/
W
D
e
l
t
a
R
)
)
130
120
IRK.91.. Series
R (DC) = 0.27 K/W
thJC
110
Conduction Angle
100
90
80
70
Maximum Allowable Case Temperature (°C
02040608010
30°
60°
90°
120°
Average On-state Current (A)
180°
0
130
120
IRK.91.. Series
R (DC) = 0.27 K/W
thJC
110
Conduction Period
100
90
80
70
Maximum Allowable Case Temperature (°C
0 20 40 60 80 10012014016
30°
60°
90°
120°
180°
Average On-state Current (A)
DC
0
Fig. 11 - Current Ratings CharacteristicsFig. 10 - Current Ratings Characteristics
7
IRK.71, .91 Series
)
)
)
)
Bulletin I27132 rev. D 09/97
140
180°
120
100
80
120°
90°
60°
30°
RMS Limit
60
40
20
0
Maximu m Average On-state Pow er Los s (W
0204060801
Conduction Angle
IRK.91.. Series
Per Junction
T = 125°C
Average On-state Current (A)
J
00
180
DC
160
180°
120°
140
90°
60°
120
30°
100
RMS Limit
80
60
40
20
0
Maximum Average On-state Power Loss (W
0 20 40 60 80 10012014016
Conduction Period
IRK.91.. Series
Per Junction
T = 125°C
J
Average On-state Current (A)
Fig. 13 - On-state Power Loss CharacteristicsFig. 12 - On-state Power Loss Characteristics
1600
At Any Rated Load Condition And With
1500
1400
1300
Rated V Applied Following Surge.
RRM
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1200
1100
1000
900
IRK.91.. Series
800
Peak Half Sine Wave On-state Current (A
Per Junction
700
1101
Number Of Equal Amplitude Half Cycle Current Pulses (N)
00
1800
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
1600
Initial T = 125°C
1400
No Voltage Reapplied
Rated V Reapplied
1200
1000
800
IRK.91.. Series
Peak Half Sine Wave On-state Current (A
Per Junction
600
0.01 0.1
Pulse Train Duration (s)
J
RRM
Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
0
1
350
R
t
h
300
250
200
150
Conduction Angle
180°
120°
90°
60°
30°
100
IRK.91.. Series
50
Max imu m To ta l On-s ta te Power L oss (W)
0
0 40 80 120 160 200 240
Total RMS Output Current (A)
Per Module
T = 125°C
J
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C
S
A
0
.
2
=
K
0
/
.
W
1
0
.
3
K
/
W
0
.
5
K
/
0
.
7
K
/
1
K
/
W
1
.
5
K
/
3
K
W
/
K
/
W
D
e
l
t
a
W
W
W
R
)
Fig. 16 - On-state Power Loss Characteristics
8
600
180°
500
400
(Sine)
180°
(Rect)
300
200
2 x IRK.91.. Series
100
Maximum Total Power Loss (W)
0
0 40 80 120 160 200
Single Phase Bridge
Connected
T = 125°C
J
Total Output Current (A)
Fig. 17 - On-state Power Loss Characteristics
900
800
700
600
500
120°
(Rect)
400
300
200
Maximum Total Powe r Loss (W)
100
0
0 40 80 120 160 200 240 280
3 x IRK.91.. Series
Three Phase Bridge
Connected
T = 125°C
J
Total Output Current (A)
Fig. 18 - On-state Power Loss Characteristics
IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
R
t
h
S
A
=
0
.
1
K
/
0
.
2
0
.
3
K
0
.
5
1
K
/
2
K
/
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
R
t
h
S
A
0
.
2
0
.
3
0
.
5
1
K
/
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C
W
K
/
/
K
/
W
W
K
/
K
/
K
/
W
-
W
W
W
W
W
W
D
e
l
t
a
R
=
0
.
1
K
/
W
-
D
e
l
t
a
R
)
1000
100
T = 25°C
10
Instant aneous On-state Current (A)
1
0.511.522.533.5
J
T = 125°C
J
IRK.71.. Series
Per Junction
Instantaneous On-state Voltage (V)
4
1000
100
T = 25°C
J
10
T = 125°C
J
IRK.91.. Series
Instantan eous On- state Cur rent ( A)
1
0.511.522.533
Per Junction
Instantaneous On-state Voltage (V)
Fig. 19 - On-state Voltage Drop Characteristics Fig. 20 - On-state Voltage Drop Characteristics
.5
9
IRK.71, .91 Series
)
)
)
Bulletin I27132 rev. D 09/97
700
600
IRK.71.. Series
IRK.91.. Series
T = 125 °C
J
I = 200 A
TM
500
400
300
200
100
10 20 30 40 50 60 70 80 9010
Ma ximum Reve rse Rec overy Cha rge - Qrr (µC
Rate Of Fall Of On-state Current - di/dt (A/µs)
1
Steady State Value:
R = 0.33 K/W
thJC
thJC
R = 0.27 K/W
thJC
(DC Operation)
0.1
100 A
50 A
20 A
10 A
0
Maximum Reverse Recovery Current - Irr (A
IRK.71.. Series
IRK.91.. Series
140
120
100
80
60
IRK.71.. Series
IRK.91.. Series
T = 125 °C
J
I = 200 A
TM
100 A
50 A
20 A
10 A
40
20
10 20 30 40 50 60 70 80 9010
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 22 - Recovery Current CharacteristicsFig. 21 - Recovery Charge Characteristics
Per Junction
0
0.01
Transient Thermal Impedance Z (K/W
0.001 0.01 0.1 1 1
0
Square Wave Pulse Duration (s)
100
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 15 V, 40 ohms
10
tr = 1 µs, tp >= 6 µs
Fig. 23 - Thermal Impedance Z
(a)
(b)
TJ = -40 °C
TJ = 25 °C
T J = 125 °C
Characteristics
thJC
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
1
(4) (3) (2) (1)
Instantaneous Gate Voltage (V)
VGD
IGD
0.1
0.001 0.01 0.1 1 10 100 100
IRK.71../.91.. Series
Frequency Limited by PG(AV)
Instantaneous Gate Current (A)
0
Fig. 24 - Gate Characteristics
10
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