International Rectifier IRK.71 SERIES, IRK.91 SERIES Data Sheet
Bulletin I27132 rev. D 09/97
IRK.71, .91 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Electrically isolated: DBC base plate
3500 V
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
isolating voltage
RMS
Description
These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configurations. The semiconductor chips are electrically
isolated from the base plate, allowing common
heatsinks and compact assemblies to be built.
They can be interconnected to form single phase or
three phase bridges or AC controllers. These
modules are intended for general purpose high
voltage applications such as high voltage regulated
power supplies, lighting circuits, and temperature
and motor speed control circuits.
Major Ratings and Characteristics
Parameters IRK.71 IRK.91 Units
I
or I
T(AV)
F(AV)
@ 85°C
I
(*) 165 210 A
O(RMS)
I
@ 50Hz 1665 1785 A
TSM
@ 60Hz 1740 1870 A
I
FSM
2
I
t @ 50Hz 13.86 15.91 KA2s
@ 60Hz 12.56 14.52 KA
I2√t 138.6 159.1 KA2√s
V
range 400 to 1600 V
RRM
T
STG
T
J
(*) As AC switch.
75 95 A
- 40 to 125
- 40 to125
2
s
o
C
o
C
NEW ADD-A-pakTM Power Modules
75 A
95 A
1
IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
V
, maximum V
RRM
Type number
Voltage repetitive non-repetitive peak off-state voltage,I
Code peak reverse voltagepeak reverse voltage gate open circuit 125°C
-VVVmA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.71/ .91 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
On-state Conduction
Parameters IRK.71 IRK.91 Units Conditions
I
Max. average on-state
T(AV)
current (Thyristors) 180
Max. average forward TC = 85oC
I
F(AV)
current (Diodes)
Max. continuous RMS
I
O(RMS)
on-state current. 165 210
As AC switch
I
Max. peak, one cycle 1665 1785 t=10msNo voltage
TSM
or non-repetitive on-state 1740 1870 t=8.3msreapplied
or forward current 1400 1500 t=10ms100% V
I
FSM
2
t Max. I2t for fusing 13.86 15.91 t=10msNo voltage
I
2
√t Max. I2√t for fusing (1) 138.6 159.1 KA2√s t=0.1 to 10ms, no voltage reapplied
I
Max. value of threshold 0.82 0.80 Low level (3)
V
T(TO)
voltage (2) 0.85 0.85 High level (4)
Max. value of on-state 3.00 2.40 Low level(3)
r
t
slope resistance (2) 2.90 2.25 High level (4)
Max. peak on-state or I
V
TM
VFMforward voltage I
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 V
of rise of turned on 150 A/µs I
current t
Max. holding current 200 TJ = 25oC, anode supply = 6V,
I
H
Max. latching current 400 TJ = 25oC, anode supply = 6V, resistive load
I
L
(1) I2t for time t
(4) I > π x I
AV
= I2√t
x √tx(2) Average power = V
x
75 95
1470 1570 t=8.3msreapplied
1850 2000 t=10msT
1940 2100 t=8.3msno voltage reapplied
12.56 14.52 t=8.3msreapplied
9.80 11.25 t=10ms100% V
8.96 10.27 t=8.3msreapplied
17.11 20.00 t=10msT
15.60 18.30 t= 8.3msno voltage reapplied
1.59 1.58 V
x I
T(TO)
T(AV)
2
, maximum V
RSM
A
KA2s
V
mΩ
mA
+ r
x (I
t
T(RMS)
, max. repetitiveI
DRM
o
conduction, half sine wave,
or
I
(RMS)
Sinusoidal
half wave,
RRM
Initial T
= 25oC,
J
Initial TJ = TJ max.
RRM
= 25oC,
J
= TJ max
T
J
T
= TJ max
J
= π x I
TM
T(AV)
= π x I
FM
F(AV)
=π x I
T(AV)
, I
TM
< 0.5 µs, tp > 6 µs
r
= 500mA,
g
T
DRM
= 25°C
J
,
resistive load, gate open circuit
2
)
(3) 16.7% x π x I
< I < π x I
AV
RRM
DRM
I
(RMS)
= TJ max.
J
AV
Triggering
Parameters IRK.71 IRK.91 Units Conditions
Max. peak gate power 12 12
P
GM
Max. average gate power 3.0 3.0
P
G(AV)
Max. peak gate current 3.0 3.0 A
I
GM
Max. peak negative
-V
GM
gate voltage
Max. gate voltage 4.0 TJ = - 40°C
V
GT
required to trigger 2.5 T
10
1.7 T
Max. gate current 270 TJ = - 40°C
I
GT
required to trigger 150 mA T
80 T
V
Max. gate voltage T
GD
that will not trigger rated V
Max. gate current TJ = 125oC,
I
GD
that will not trigger rated V
0.25 V
6mA
W
V
Blocking
Parameters IRK.71 IRK.91 Units Conditions
I
Max. peak reverse and
RRM
off-state leakage current
I
V
DRM
INS
, V
at V
RRM
DRM
RMS isolation voltage V
dv/dtMax. critical rate of rise T
of off-state voltage (5) gate open circuit
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16 S90.
15 mA T
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
500 V/µs
IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
DRM
DRM
applied
applied
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
= 25°C
J
= 125°C
J
= 25°C
J
= 125°C
J
= 125oC,
J
= 125 oC, gate open circuit
J
= 125oC, linear to 0.67 V
J
DRM
,
Thermal and Mechanical Specifications
Parameters IRK.71 IRK.91 Units Conditions
T
Junction operating
J
temperature range
Storage temp. range - 40 to 125
T
stg
Max. internal thermal
R
thJC
resistance, junction 0.165 0.135 Per module, DC operation
to case
Typical thermal resistance
R
thCS
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar 3
wt Approximate weight 83 (3) g (oz)
Case style TO-240AA JEDEC
- 40 to 125
0.1
5
°C
K/W
Nm
Mounting surface flat, smooth and greased.
Flatness < 0.03 mm; roughness < 0.02 mm
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
3
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