International Rectifier IRK.56 SERIES, IRK.71 SERIES Data Sheet

Bulletin I27140 rev. B 09/97

IRK.56, .71 SERIES

ST ANDARD DIODES

Features

Electrically isolated: DBC base plate
3500 V
Standard JEDEC package
Simplified mechanical designs, rapid assembly
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved

isolating voltage

RMS

Description

These IRK series of NEW ADD-A-paks use power
diodes in a variety of circuit configurations. The
semiconductor chips are electrically isolated from
the base plate, allowing common heatsinks and
compact assemblies to be built. They can be
interconnected to form single phase or three phase
bridges. These modules are intended for general
purpose high voltage applications such as battery
chargers, welders and plating equipment

NEW ADD-A-pakTM Power Modules

60 A
80 A

Major Ratings and Characteristics

Parameters IRK.56 IRK.71 Units

I

F(AV)

@ 100°C

I

F(RMS)

@ 50Hz 1600 1790 A

I

FSM

@ 60Hz 1680 1870 A

I2t @ 50Hz 12.89 15.90 KA2s

@ 60Hz 11.76 14.53 KA

I2√t 128.9 159 KA2√s

range 400 to 1600 V

V

RRM

T

J

T

STG

60 80 A

94 126 A

- 40 to 150

- 40 to150

o

o

2

s

C
C

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IRK.56, .71 Series

Bulletin I27140 rev. B 09/97

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

Type number Code peak reverse voltage repetitive peak rev. voltage

04 400 500
06 600 700

08 800 900

IRK.56/ .71 10 1000 1100 10

12 1200 1300
14 1400 1500
16 1600 1700

Forward Conduction

Parameter IRK.56 IRK.71 Units Conditions

I

Max. average forward current 60 80 A 180° conduction, half sine wave

F(AV)

@ Case temperature 100 100 °C
Max. average forward current 55 70 A 180° conduction, half sine wave

I

F(AV)

@ Case temperature 105 108 °C
Max. RMS forward current 94 1 26 A DC @ 92°C case temperature

I

F(RMS)

Max. peak, one-cycle forward, 1600 1790 t = 10ms No voltage

I

FSM

non-repetitive surge current 1680 1870 t = 8.3ms reapplied

2

t Maximum I2t for fusing 12.89 15.90 t = 10ms No voltage Initial TJ = TJ max.

I

2

√ t Maximum I2√t for fusing 128.9 159.0 KA2√s t = 0.1 to 10ms, no voltage reapplied

I

Low level value of threshold

V

F(TO)1

voltage

V

High level value of threshold

F(TO)2

voltage

r

Low level value of forward

f1

slope resistance
High level value of forward

r

f2

slope resistance
Max. forward voltage drop 1.51 1.50 V I

V

FM

, maximum repetitive V

RRM

, maximum non- I

RSM

VVmA

1350 1500 t = 10ms 100% V
1420 1570 t = 8.3ms reapplied Sinusoidal half wave,

11.76 14.53 t = 8.3ms reapplied

9.12 11.25 t = 10ms 100% V

8.32 10.23 t = 8.3ms r eapplied

0.96 0.83 (16.7% x π x I

1.03 0.92 (I > x π x I

2.81 2.68 (16.7% x π x I

2.48 2.40 (I > x π x I

A

KA2s

V

mΩ

FM

= π x I

RRM

RRM

< I < π x I

F(AV)

), TJ = TJ max.

F(AV)

< I < π x I

F(AV)

), TJ = TJ max.

F(AV)

, TJ = 25°C, tp = 400µs square wave

F(AV)

), TJ = TJ max.

F(AV)

), TJ = TJ max.

F(AV)

RRM

@ 150°C

max.

Blocking

Parameter IRK.56 IRK.71 Units Conditions

I

Max. peak reverse leakage

RRM

current
RMS isolation voltage 3500 (1 sec) V 50 Hz, circuit to base, all terminals shorted

V

INS

10 mA T

= 150oC

J

2

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IRK.56, .71 Series

Bulletin I27140 rev. B 09/97

Thermal and Mechanical Specifications

Parameter IRK.56 IRK.71 Units Conditions

T

Junction temperature range -40 to 150 °C

J

Storage temperature range -40 to 150 °C

T

stg

Max. thermal resistance,

R

thJC

junction to case

R

Typical thermal resistance,

thCS

case to heatsink

T Mounting tourque ±10%

to heatsink 5

busbar 4

wt Approximate weight 83 (3) g (oz)

Case style TO-240AA JEDEC

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance R

Devices Units

180

Sine half wave conduction Rect. wave conduction

o

120

o

IRK.56 0.11 0.13 0.16 0.22 0.32 0.09 0.14 0.17 0.23 0.32
IRK.71 0.06 0.08 0.11 0.14 0.21 0.06 0.09 0.11 0.15 0.21

Ordering Information Table

0.5 0.4 K/ W Per junction, DC operation

0.1 K/W

thJC

o

90

o

60

o

30

Mounting surface flat, smooth and greased
Flatness < 0.03 mm; roughness < 0.02 mm

A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours

Nm

to allow for the spread of the compound

when devices operate at different conduction angles than DC)

180o120

o

o

90

o

60

o

30

°C/W

Device Code

1 - Module type
2 - Circuit configuration (See Circuit Configuration Table)
3 - Current code
4 - Voltage code (See Voltage Ratings Table)

Circuit Configurations Table

IRKD IRKE IRKJ IRKC

(1)

~

(2)

+

(2)

-

(3)

(3)

IRK D 71 / 16

1 23

(1)

-

+

-

+

(2)

+

(3)

4

(1)

+

-

(2)

D = 2 diodes in series
E = Single diode
J = 2 diodes/common anode
C = 2 diodes/common cathode

-

(3)

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