International Rectifier IRK.41 SERIES, IRK.56 SERIES Data Sheet

Bulletin I27131 rev. C 09/97

IRK.41, .56 SERIES

THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR

Features

Electrically isolated: DBC base plate
3500 V
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved

isolating voltage

RMS

Description

These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configura­tions. The semiconductor chips are electrically iso­lated from the base plate, allowing common heatsinks
and compact assemblies to be built. They can be
interconnected to form single phase or three phase
bridges or AC controllers. These modules are intended
for general purpose high voltage applications such as
high voltage regulated power supplies, lighting
circuits, and temperature and motor speed control
circuits.

Major Ratings and Characteristics

Parameters IRK.41 IRK.56 Units

I

or I

T(AV)

F(AV)

@ 85°C

I

(*) 100 135 A

O(RMS)

I

@ 50Hz 850 1310 A

TSM

@ 60Hz 890 1370 A

I

FSM

2

I

t @ 50Hz 3.61 8.50 KA2s

@ 60Hz 3.30 7.82 KA

I2√t 36.1 85.0 KA2√s
V

range 400 to 1600 V

RRM

T

STG

T

J

(*) As AC switch.

45 60 A

- 40 to 125

- 40 to125

2

s

o

C

o

C

NEW ADD-A-pakTM Power Modules

45 A
60 A

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1

IRK.41, .56 Series

Bulletin I27131 rev. C 09/97

ELECTRICAL SPECIFICATIONS

Voltage Ratings

V

, maximum V

RRM

Type number

Voltage repetitive non-repetitive peak off-state voltage, I

Code peak reverse voltage peak reverse voltage gate open circuit 125°C

-VVVmA

04 400 500 400
06 600 700 600
08 800 900 800

IRK.41/ .56 10 1000 1100 1000 15

12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600

On-state Conduction

Parameters IRK.41 IRK.56 Units Conditions

I

Max. average on-state

T(AV)

current (Thyristors) 45 60 180
Maximum average 45 60 TC = 85oC

I

F(AV)

forward current (Diodes)
Max. continuous RMS

I

O(RMS)

on-state current.
As AC switch

I

Max. peak, one cycle 850 1310 t=10ms No voltage

TSM

or non-repetitive on-state 890 1370 t=8.3ms reapplied

or forward current 715 1100 t=10ms 100% V

I

FSM

2

t Max. I2t for fusing 3.61 8.56 t=10ms No voltage

I

2

√t Max. I2√t for fusing (1) 36.1 85.6 KA2√s t=0.1 to 10ms, no voltage reapplied

I

Max. value of threshold 0.88 0.85 Low level (3)

V

T(TO)

voltage (2) 0.91 0.88 High level (4)
Max. value of on-state 5.90 3.53 Low level (3)

r

t

slope resistance (2) 5.74 3.41 High level (4)

V

Max. peak on-state or I

TM

forward voltage I

V

FM

di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 V

of rise of turned on I
current t

IHMax. holding current 200

Max. latching current 400 TJ = 25oC, anode supply = 6V,resistive load

I

L

(1) I2t for time t
(4) I > π x I

AV

= I2√t

x √tx(2) Average power = V

x

100 135

750 1150 t=8.3ms reapplied
940 1450 t=10ms T

985 1520 t=8.3ms no voltage reapplied

3.30 7.82 t=8.3ms reapplied

2.56 6.05 t=10ms 100% V

2.33 5.53 t=8.3ms reapplied

4.42 10.05 t=10ms T

4.03 9.60 t=8.3ms no voltage reapplied

1.81 1.54 V

15 0 A/µs

x I

T(TO)

T(AV)

2

, maximum V

RSM

A

KA2s

V

mΩ

mA

+ r

x (I

t

T(RMS)

, max. repetitive I

DRM

o

conduction, half sine wave,

or

I

(RMS)

Sinusoidal

half wave,

RRM

Initial T

= 25oC,

J

Initial T

RRM

= 25oC,

J

TJ = TJ max

T

= TJ max

J

= π x I

TM

T(AV)

= π x I

FM

F(AV)

=π x I

TM

T(AV)

< 0.5 µs, tp > 6 µs

r

= 25oC, anode supply = 6V,

T

J

, I

= 500mA,

g

TJ = 25oC

,

DRM

resistive load, gate open circuit

)2(3) 16.7% x π x I

< I < π x I

AV

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I

= TJ max.

J

= TJ max.

J

AV

RRM
DRM

(RMS)

Triggering

Parameters IRK.41 IRK.56 Units Conditions

PGMMax. peak gate power 10 10

Max. average gate power 2.5 2.5

P

G(AV)

Max. peak gate current 2.5 2.5 A

I

GM

Max. peak negative

-V

GM

gate voltage

Max. gate voltage

V

GT

required to trigger

Max. gate current

I

GT

required to trigger

V

Max. gate voltage

GD

that will not trigger
Max. gate current

I

GD

that will not trigger

10

4.0 T

2.5 T

1.7 T

270 T
150 mA T

80 T

0.25 V

6mA

W

V

Blocking

Parameters IRK.41 IRK.56 Unit s Conditions

I

Max. peak reverse and

RRM

off-state leakage current

I

V

DRM

INS

, V

at V

RRM

DRM

RMS isolation voltage V

dv/dt Max. critical rate of rise T

of off-state voltage (5) gate open circuit

(5) Available with dv/dt = 1000V /µs, to complete code add S90 i.e. IRKT41/16 S90.

15 mA T

2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted

500 V/µs

IRK.41, .56 Series

Bulletin I27131 rev. C 09/97

= - 40°C

J

= 25°C

J

= 125°C

J

= - 40°C

J

= 25°C

J

= 125°C

J

TJ = 125oC,
rated V

= 125oC,

T

J

rated V

= 125 oC, gate open circuit

J

= 125oC, linear to 0.67 V

J

DRM

DRM

applied

applied

Anode supply = 6V
resistive load

Anode supply = 6V
resistive load

DRM

,

Thermal and Mechanical Specifications

Parameters IRK.41 IRK.56 Units Conditions

TJJunction operating

temperature range

T

Storage temp. range - 40 to 125

stg

Max. internal thermal

R

thJC

resistance, junction 0.23 0.20 Per module, DC operation
to case
Typical thermal resistance

R

thCS

case to heatsink

T Mounting torque ± 10%

to heatsink 5
busbar 3

wt Approximate weight 83 (3) g (oz)

Case style TO-240AA JEDEC

- 40 to 125

0.1

°C

K/W

Nm

Mounting surface flat, smooth and greased.
Flatness < 0.03 mm; roughness < 0.02 mm

A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound

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3

IRK.41, .56 Series

Bulletin I27131 rev. C 09/97

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance R

Devices Units

180o120

Sine half wave conduction Rect. wave conduction

o

o

90

o

60

IRK.41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34
IRK.56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28

Outlines Table

IRKT../.. (*)

18 REF.

Screws M5 x 0.8

30 ± 0.5

29 ± 0.5

(1.18 ± 0.02)

20.5 ± 0.75

(0.81 ± 0.03)

(1.13 ± 0.02)

IRKL../.. (*)

1

15 ± 0.5

(0.59 ± 0.02)

(0.71)

2

20 ± 0.5

(0.79 ± 0.02)

92 ± 0.5

(3.62 ± 0.02)

15.5 ± 0.5

(0.61 ± 0.02)

6.3 ± 0.3

(0.25 ± 0.01)

3

20 ± 0.5

(0.79 ± 0.02)

80 ± 0.3

(3.15 ± 0.01)

Screws M5 x 0.8

Faston tab. 2.8 x 0.8

(0.11 x 0.03)

576
4

24 ± 0.5

6.1 ± 0.3
(0.24 ± 0.01)

when devices operate at different conduction angles than DC)

thJC

o

30

180o120

o

o

90

IRKH../.. (*)

15.5 ± 0.5

1

(0.59 ± 0.02)

(0.11 x 0.03)

18 REF.

15 ± 0.5

(0.71)

2

20 ± 0.5

(0.79 ± 0.02 )

92 ± 0.5

(3.62 ± 0.02)

(0.61 ± 0.02)

6.3 ± 0.3

(0.25 ± 0.01 )

3

(0.79 ± 0.02)

80 ± 0.3

(3.15 ± 0.01)

5.8 ± 0.25

(0.94 ± 0.02)

(0.23 ± 0.01)

18 REF.

(0.71)

Screws M5 x 0.8

30 ± 0.1

30 ± 0.5

29 ± 0.5

(1.18 ± 0.04)

(1.18 ± 0.02)

(1.13 ± 0.0 2 )

(0.16 ± 0.01)

Pitch 4.0 ± 0.2

20.5 ± 0.75

(0.81 ± 0.03)

15.5 ± 0.5

(0.61 ± 0.02)

Faston tab. 2.8 x 0.8

o

60

5
4

20 ± 0. 5

o

30

Fast on tab. 2.8 x 0.8

(0 . 1 1 x 0.03)

24 ± 0.5

6.1 ± 0.3
(0.24 ± 0.01 )

(0.94 ± 0.02)

°C/W

30 ± 0.1

Pi tch 4.0 ± 0.2

(1.18 ± 0.04 )

(0.16 ± 0.01)

30 ± 0 .5

29 ± 0.5

(1.18 ± 0.0 2 )

(1.13 ± 0.02)

6.3 ± 0.3

(0.25 ± 0.01)

2

3

76

20.5 ± 0.75

(0.81 ± 0.03)

1

15 ± 0.5

(0.59 ± 0.02)

(3.62 ± 0.02)

20 ± 0.5

(0.79 ± 0.02)

(3.15 ± 0.01)

92 ± 0.5

20 ± 0.5

(0.79 ± 0.02)

80 ± 0.3

24 ± 0.5

6.1 ± 0.3
(0.24 ± 0.01)

All dimensions in millimeters (inches)

(*) For terminals connections, see Circuit configurations Table

NOTE: To order the Optional Hardware see Bulletin I27900

4

30 ± 0.1

(1.18 ± 0.04)

(0.94 ± 0.02 )

(0.1 6 ± 0.01)

Pitch 4.0 ± 0.2

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Circuit Configurations Table

0

)

0

)

IRKT IRKH IRKL

(1)

~

IRK.41, .56 Series

Bulletin I27131 rev. C 09/97

(1)

~

(1)

~

+

(2)

-

(3)

K1G1

K2 G2

(4) (5) (7) (6)

G1

(4) (5)

K1

Ordering Information Table

Device Code

IRK T 56 / 16 S90

1 2

1- Module type
2 - Circuit configuration (See Circuit Configuration table)
3 - Current code * *
4 - Voltage code (See Voltage Ratings table)
5 - dv/dt code: S90 = dv/dt 1000 V/µs

34

5

No letter = dv/dt 500 Vµs

+

(2)

-

(3)

+

(2)

-

(3)

K2

(7)G2(6)

IRK.57 types

With no auxiliary cathode

6

13.8 (0.53)

4

* * Available with no auxiliary cathode.

To specify change: 41 to 42

56 to 57

e.g. : IRKT57/16 etc.

130

120

110

IRK.41.. Series
R (DC) = 0.46 K/W

thJC

Conduction An g le

100

30°

60°

90°

90

80

Maxim um Allowable Case Temperature (°C

0 102030405

Average On-state Current (A)

120°

180°

130

IRK.41. . Series
R (DC) = 0.46 K/W

thJC

120

110

100

30°

60°

Conduction Period

90°

90

80

Ma xi mu m Allowab l e Ca s e Te mp e r a tu re (°C

0 2040608

120°

180°

DC

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

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5

IRK.41, .56 Series

0

)

50

)

)

1

t

l

.

)

)

Bulletin I27131 rev. C 09/97

70

180°

60

120°

50

90°
60°
30°

40

30

Conduction Angle

20

10

0

Maximum Average On-state Power Loss (W

0 10203040

IRK.41.. Series
Per Junction
T = 125°C

J

Average On- state Current (A)

Fig. 3 - On-state Power Loss Characteristics

800

At A n y Rated Loa d Co n dition And With

Rat ed V App li ed Followi ng Sur ge.

RRM

700

Initial T = 125°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

600

RMS Limit

J

100

DC

180°

80

120°

90°
60°
30°

60

40

20

0

Maximum Average On-stat e Power Loss (W

0 2040608

RMS Limit

Conduction P eriod

IRK.41.. Series
Per Junction
T = 125°C

J

Average On-state Current (A)

Fig. 4 - On-state Power Loss Characteristics

900

Maximum Non Repetitive Surge Cu rren

Versus Pulse Train Duration. Contro

Of Conductio n May Not Be Maintained

800

700

Initial T = 125°C

No Volta ge Reapplie d
Rated V Reapplied

J

RRM

600

500

500

400

IRK.4 1.. Series
Per Junction

300

Peak H a l f Si n e Wave On-state Cu r re n t (A )

110100

Number Of E qual Am plitude Half Cycle Current Pulses (N

400

IRK.41.. Series

Peak Half Sine Wave On-state Current (A

Per Junction

300

0.01 0.1
Pulse Train Duration (s)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

140

180°

120

100

120°

90°
60°
30°

80

60

Conduction Angle

40

20

Maximum Tota l On-s ta te Power Lo s s (W)

0

020

40

Tota l R MS Ou tp ut Cu r r en t ( A)

IRK.41.. Series

Per Modu le

T = 125°C

J

60

80

100

Fig. 7 - On-state Power Loss Characteristics

0

.

7

K

/

1

1

.

5

2

3

K

5

K

W

K

/

W

K

/

W

K

/

W

/

W

/

W

0 20 40 60 80 100 120 140

Maxim um Allowable Ambient Temperature (°C

0

.

0

3

.

5

K

/

W

R

K

/

t

h

W

S

A

=

0
.

1

K
/

W

­D

e
l

t

a

R

6

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IRK.41, .56 Series

)

)

0

)

0

)

Bulletin I27131 rev. C 09/97

350

300

250

200

180°

(Sine)

180°

(Rect)

150

100

Maximum Total Powe r Loss (W)

50

0

0 20406080100

2 x IRK .41.. Series

Single Ph a se Br idge

Connected

T = 125°C

J

Total Output Current (A)

Fig. 8 - On-state Power Loss Characteristics

500
450
400
350
300
250

120°

(Rect)

200
150
100

Maximum Total Power Loss (W)

50

0

0 20 40 60 80 100 120 140

3 x IRK.41.. Series

Three Phase Bridge

Con nected

T = 125°C

J

Total Output Current (A)

Fig. 9 - On-state Power Loss Characteristics

R

0

0

.

3

K

/

0

.

5

K

/

W

0

.

7

K

/

W

1

K

/

W

1

.

5

K

/

W

t

.

W

h

2

S

K

A

/

W

=

0

.

1

K

/

W

-

D

e

l

t

a

R

0 20 40 60 80 100 120 140

Maximum Allowable Ambient Temperature (°C

R

t

h

S

A

=

0.2 K/

0

.

3

K

/

0

.

5

K

/

0

.

7

K

/

1

K

/

W

0

.

1

K

W

W

W

W

/

W

-

D

e

l

t

a

R

0 20 40 6 0 80 100 12 0 140

Maximum Allowable Ambient Temperature (°C

130

120

IRK.56.. Series
R (DC) = 0.40 K/W

thJC

110

100

90

30°

80

70

Maximum Allowable Case Temperature (°C

0 1020304050607

Average On-state Current (A)

Conduction An gle

60°

90°

120°

180°

130

120

IRK.56.. Series
R (DC) = 0.4 0 K/W

thJC

110

Conduction Period

100

90

30°

60°

90°

120°

180°

80

70

Maximum Allowable Case Temperature (°C

0 2040608010

Average On-state Current (A)

DC

Fig. 11 - Current Ratings CharacteristicsFig. 10 - Current Ratings Characteristics

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7

IRK.41, .56 Series

0

)

60

)

)

)

1

)

t

l

.

)

Bulletin I27131 rev. C 09/97

90
80
70
60
50

180°

120°

90°
60°
30°

RMS Limit

40
30
20
10

0

Maximum Average On-state Power Loss (W

0 1020304050

Conduction Angle

IRK.56.. Ser ies
Per Junction
T = 125°C

J

Averag e On-state Current (A)

1200

At Any Rated Load Condition And With

Rated V A pplied Following Surge.

1100

1000

RRM

Initial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

900

800

700

600

IRK.5 6.. Series
Per Junction

Peak Half Sine Wave On-state Current (A

500

110100

Number Of E qua l Amplitude Half Cycle Current Pulses (N

Fig. 14 - Maximum Non-Repetitive Surge Current

120

100

80

60

40

20

Maximum Average On - s tate Power Los s (W

DC

180°

120°

90°
60°
30°

RMS Limit

Con ducti on Period

IRK. 5 6 .. Ser i es
Per Junction
T = 125°C

J

0

0 2040608010

Average On-state Current (A)

Fig. 13 - On-state Power Loss CharacteristicsFig. 12 - On-state Power Loss Characteristics

1400

Maximum Non Repetitive Surge Curren

Versus Pulse Train Duration. Contro

Of Conduction May Not Be Maintained

1200

1000

Initial T = 125°C

No V olta ge Reapp lied
Rated V Reapplied

J

RRM

800

600

IRK.56.. Series

Peak Half Sine Wav e On-s ta te Curre nt (A

Per Junction

400

0.01 0.1
Pulse Train Duration (s)

Fig. 15 - Maximum Non-Repetitive Surge Current

200

180
160

140

180°

120°

90°
60°
30°

120

100

80

Conduction Angle

60

40

20

Max imu m T otal O n- st a te Power Loss ( W)

0

0 20 40 60 80 100 120 140

Total RMS Output Curr en t (A)

Fig. 16 - On-state Power Loss Characteristics

IRK.56.. Series

Per Module

T = 125°C

J

0

.

3

K

0

.

4

K

/

W

0.5
K/

W

0

.

7

K

/

W

1

K

/

W

1

.

5

K

/

W

2

K

/

W

4

K

/

W

0 20 40 60 80 100 120 140

Maximum Allowable Ambient Temperature (°C

R

0

.

2

t

h

K

S

/

W

/

A

W

=

0

.

1

K

/

W

-

D

e

l

t

a

R

8

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)

450

)

.5

7

400
350
300
250
200

180°

(Sine)

180°

(Rect)

150
100

Maximum Total Power Loss (W)

50

0

0 20 40 60 80 100 120 140

2 x IRK.56.. Series

Single Phase Bridge

Connected

T = 125°C

J

Total Output Current (A)

Fig. 17 - On-state Power Loss Characteristics

600

500

400

120°

300

200

100

Maximum Total Power Loss (W)

0

0 20 40 60 80 100 120 140 160 180

(Rect)

3 x IRK.56.. Series

Three Ph ase Bridge

Connected

T = 125°C

J

Total Output Current (A)

Fig. 18 - On-state Power Loss Characteristics

IRK.41, .56 Series

Bulletin I27131 rev. C 09/97

R

t

h

S

A

=

0

0

.

3

0

.

5

0

.

7

1

K

/

2

K

/

0 20 40 60 80 100 120 140

Maxi mum Allowable Ambi ent Temperat ur e (°C

0

.

2

0

.

3

K

0

.

5

0

.

7

1

K

/

0 20406080100120140

Maximum Allowable Ambient Tem perature (°C

.

2

K

K

K

W

W

K

/

K

K

W

0

.

K

/

W

/

/

1

/

/

W

/

W

W

/

W

W

W

K

W

/

W

-

D

e

l

t

a

R

R

t

h

S

A

=

0

.

1

K

/

W

-

D

e

l

t

a

R

1000

100

T = 25 °C

J

10

T = 125°C

J

Instantaneous On-state Current (A)

1

0123456

Instantaneous On-state Voltage (V)

IRK.41.. Series
Per Junction

1000

100

T = 25°C

J

10

T = 125°C

J

IRK.56.. Series

Instantane ous On -state Cur re nt (A)

1

0.511.522.533.544

Per Junction

Instantaneo us On-state Voltage (V)

Fig. 19 - On-state Voltage Drop Characteristics Fig. 20 - On-state Voltage Drop Characteristics

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9

IRK.41, .56 Series

0

)

s)

0

s)

)

0

)

0

Bulletin I27131 rev. C 09/97

500

IRK.4 1 .. Series
IRK.5 6 .. Series

450

T = 125 °C

J

400

350

300

250

200

150

100

10 20 30 40 50 60 70 80 90 10

Maximum Reverse Recovery Charge - Qrr (µC

Rate Of Fall Of On-state Current - di/dt (A/µ

1

Stea dy St ate Value:
R = 0.46 K/W
R = 0.40 K/W
(DC Operation)

0.1

thJC
thJC

thJC

I = 200 A

TM

100 A

50 A

20 A

10 A

IRK.41. . Ser ie s
IRK.56. . Ser ie s

110

I = 200 A

TM

100

90

80

70

60

50

40

30

Maximum Reverse Recovery Current - Irr (A

10 20 30 40 50 60 70 80 90 10

IRK.41.. Series
IRK.56.. Series
T = 125 °C

J

Rate Of Fall Of Forward Curre nt - di/dt (A/µ

Fig. 22 - Recovery Current CharacteristicsFig. 21 - Recovery Charge Characteristics

100 A

50 A
20 A

10 A

Per Junction

0.01

Transient Thermal Impedance Z (K/W

0.001 0.01 0.1 1 1
Squ a re Wave Pulse Dur ation (s)

100

Rectangular gate pulse
a)Recommended load line for

rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs

b)Recommended load line for

<= 30% rated di/dt: 20 V, 65 ohms

10

tr = 1 µs, tp >= 6 µs

Fig. 23 - Thermal Impedance Z

(a)

(b)

TJ = -40 °C

TJ = 25 °C

TJ = 125 °C

Characteristics

thJC

(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms

1

(4 ) (3) (2) (1)

Instantaneous Gate Voltage (V)

VGD

IGD

0.1

0.001 0.01 0.1 1 10 100 100

IRK.41../.56.. Series

Fr equ ency Limited by PG(AV)

Instantaneous Gate Current (A)

Fig. 24 - Gate Characteristics

10

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