International Rectifier IRK.41 SERIES, IRK.56 SERIES Data Sheet
Bulletin I27131 rev. C 09/97
IRK.41, .56 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Electrically isolated: DBC base plate
3500 V
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
isolating voltage
RMS
Description
These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configurations. The semiconductor chips are electrically isolated from the base plate, allowing common heatsinks
and compact assemblies to be built. They can be
interconnected to form single phase or three phase
bridges or AC controllers. These modules are intended
for general purpose high voltage applications such as
high voltage regulated power supplies, lighting
circuits, and temperature and motor speed control
circuits.
Major Ratings and Characteristics
Parameters IRK.41 IRK.56 Units
I
or I
T(AV)
F(AV)
@ 85°C
I
(*) 100 135 A
O(RMS)
I
@ 50Hz 850 1310 A
TSM
@ 60Hz 890 1370 A
I
FSM
2
I
t @ 50Hz 3.61 8.50 KA2s
@ 60Hz 3.30 7.82 KA
I2√t 36.1 85.0 KA2√s
V
range 400 to 1600 V
RRM
T
STG
T
J
(*) As AC switch.
45 60 A
- 40 to 125
- 40 to125
2
s
o
C
o
C
NEW ADD-A-pakTM Power Modules
45 A
60 A
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IRK.41, .56 Series
Bulletin I27131 rev. C 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
V
, maximum V
RRM
Type number
Voltage repetitive non-repetitive peak off-state voltage, I
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
-VVVmA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.41/ .56 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
On-state Conduction
Parameters IRK.41 IRK.56 Units Conditions
I
Max. average on-state
T(AV)
current (Thyristors) 45 60 180
Maximum average 45 60 TC = 85oC
I
F(AV)
forward current (Diodes)
Max. continuous RMS
I
O(RMS)
on-state current.
As AC switch
I
Max. peak, one cycle 850 1310 t=10ms No voltage
TSM
or non-repetitive on-state 890 1370 t=8.3ms reapplied
or forward current 715 1100 t=10ms 100% V
I
FSM
2
t Max. I2t for fusing 3.61 8.56 t=10ms No voltage
I
2
√t Max. I2√t for fusing (1) 36.1 85.6 KA2√s t=0.1 to 10ms, no voltage reapplied
I
Max. value of threshold 0.88 0.85 Low level (3)
V
T(TO)
voltage (2) 0.91 0.88 High level (4)
Max. value of on-state 5.90 3.53 Low level (3)
r
t
slope resistance (2) 5.74 3.41 High level (4)
V
Max. peak on-state or I
TM
forward voltage I
V
FM
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 V
of rise of turned on I
current t
IHMax. holding current 200
Max. latching current 400 TJ = 25oC, anode supply = 6V,resistive load
I
L
(1) I2t for time t
(4) I > π x I
AV
= I2√t
x √tx(2) Average power = V
x
100 135
750 1150 t=8.3ms reapplied
940 1450 t=10ms T
985 1520 t=8.3ms no voltage reapplied
3.30 7.82 t=8.3ms reapplied
2.56 6.05 t=10ms 100% V
2.33 5.53 t=8.3ms reapplied
4.42 10.05 t=10ms T
4.03 9.60 t=8.3ms no voltage reapplied
1.81 1.54 V
15 0 A/µs
x I
T(TO)
T(AV)
2
, maximum V
RSM
A
KA2s
V
mΩ
mA
+ r
x (I
t
T(RMS)
, max. repetitive I
DRM
o
conduction, half sine wave,
or
I
(RMS)
Sinusoidal
half wave,
RRM
Initial T
= 25oC,
J
Initial T
RRM
= 25oC,
J
TJ = TJ max
T
= TJ max
J
= π x I
TM
T(AV)
= π x I
FM
F(AV)
=π x I
TM
T(AV)
< 0.5 µs, tp > 6 µs
r
= 25oC, anode supply = 6V,
T
J
, I
= 500mA,
g
TJ = 25oC
,
DRM
resistive load, gate open circuit
)2(3) 16.7% x π x I
< I < π x I
AV
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I
= TJ max.
J
= TJ max.
J
AV
RRM
DRM
(RMS)
Triggering
Parameters IRK.41 IRK.56 Units Conditions
PGMMax. peak gate power 10 10
Max. average gate power 2.5 2.5
P
G(AV)
Max. peak gate current 2.5 2.5 A
I
GM
Max. peak negative
-V
GM
gate voltage
Max. gate voltage
V
GT
required to trigger
Max. gate current
I
GT
required to trigger
V
Max. gate voltage
GD
that will not trigger
Max. gate current
I
GD
that will not trigger
10
4.0 T
2.5 T
1.7 T
270 T
150 mA T
80 T
0.25 V
6mA
W
V
Blocking
Parameters IRK.41 IRK.56 Unit s Conditions
I
Max. peak reverse and
RRM
off-state leakage current
I
V
DRM
INS
, V
at V
RRM
DRM
RMS isolation voltage V
dv/dt Max. critical rate of rise T
of off-state voltage (5) gate open circuit
(5) Available with dv/dt = 1000V /µs, to complete code add S90 i.e. IRKT41/16 S90.
15 mA T
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
500 V/µs
IRK.41, .56 Series
Bulletin I27131 rev. C 09/97
= - 40°C
J
= 25°C
J
= 125°C
J
= - 40°C
J
= 25°C
J
= 125°C
J
TJ = 125oC,
rated V
= 125oC,
T
J
rated V
= 125 oC, gate open circuit
J
= 125oC, linear to 0.67 V
J
DRM
DRM
applied
applied
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
DRM
,
Thermal and Mechanical Specifications
Parameters IRK.41 IRK.56 Units Conditions
TJJunction operating
temperature range
T
Storage temp. range - 40 to 125
stg
Max. internal thermal
R
thJC
resistance, junction 0.23 0.20 Per module, DC operation
to case
Typical thermal resistance
R
thCS
case to heatsink
T Mounting torque ± 10%
to heatsink 5
busbar 3
wt Approximate weight 83 (3) g (oz)
Case style TO-240AA JEDEC
- 40 to 125
0.1
°C
K/W
Nm
Mounting surface flat, smooth and greased.
Flatness < 0.03 mm; roughness < 0.02 mm
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
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