International Rectifier IRHNA9160 Datasheet
Provisional Data Sheet No. PD-9.1433
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REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET
-100Volt, 0.087
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10
test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain identical electrical specifications
up to 1 x 10
drive circuitry is required. These de vices are also capable of
surviving transient ionization pulses as high as 1 x 10
(Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International
Rectifier’s P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the RAD HARD
process utilizes International Rectifier’s patented HEXFET
technology, the user can e xpect the highest quality and reliability in the industry.
P- Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters. They are
well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers
and high-energy pulse circuits in space and weapons environments.
5
rads (Si). Under identical pre- and post-radiation
5
®
TRANSISTOR
ΩΩ
Ω, RAD HARD HEXFET
ΩΩ
Rads (Si) total dose. No compensation in gate
12
Rads
Absolute Maximum Ratings
Parameter IRHNA9160 Units
ID @ VGS = -12V, TC = 25oC Continuous Drain Current -38
ID @ VGS = -12V, TC = 100oC Continuous Drain Current -2 4
I
DM
PD @ TC = 25oC Max. P o wer Dissipation 30 0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Reco ve ry dv/dt ➂ -5.5
T
J
T
STG
Pulsed Drain Current ➀ -152
Linear Derating Factor 2.4 W/K➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 500 mJ
Avalanche Current ➀ -38 A
Repetitive Avalanche Energy ➀ 30 mJ
Operating Junction -55 to 150
Storage T emperature Range
Package Mounting Surf ace T emperature 300
Weight 3.3 (typical) g
IRHNA9160
P-CHANNEL
RAD HARD
Product Summary
Part Number BVDSS RDS(on) ID
IRHNA9160 -100V 0.087Ω -38A
Features:
■ Radiation Hardened up to 1 x 10
■ Single Event Burnout (SEB) Hardened
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ Neutron T olerant
■ Identical Pre- and P ost-Electrical Test Conditions
■ Repetitive A valanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Lightweight
(for 5 sec.)
5
Rads (Si)
Pre-Radiation
A
V/ns
o
C
IRHNA9160 Device Pre-Radiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. T yp . Max. Units T est Conditions
BV
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
DSS
Drain-to-Source Breakdown V oltage -100 — — V VGS = 0V, ID = -1.0 mA
/∆TJT emperature Coefficient of Breakdow n — -0.13 — V/
V oltage
Static Drain-to-Source — — 0.087 VGS = -12V, ID = -24A
On-State Resistance — — 0.010 Ω VGS = -12V, ID = -38A
Gate Threshold V oltage -2.0 — -4.0 V VDS = VGS, ID = -1.0 mA
Forward T ransconductance 10 — — S ( )VDS > -15V, IDS = -24A ➃
Zero Gate V oltage Dr ain Current — — -2 5 VDS = 0.8 x Max Rating,VGS = 0V
— — -250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — -100 VGS = -20V
Gate-to-Source Leakage Reverse — — 10 0 VGS = 20V
T otal Gate Charge — — 200 VGS =-12V, ID = -38A
Gate-to-Source Charge — — 50 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 90
T urn-On Dela y T ime — — 70 VDD = -100V, ID = -38A,
Rise Time — — 24 0 RG = 2.35Ω
T urn-Off Delay Time — — 22 0
Fall Time — — 150
Internal Drain Inductance — 8.7 —
Internal Source Inductance — 8.7 —
Input Capacitance — 7000 — VGS = 0V, VDS = -25V
Output Capacitance — 2000 — f = 1.0 MHz
Reverse T ransfer Capacitance — 500 —
o
C Reference to 25oC, ID = -1.0 mA
Ω
µA
VGS = 0V, TJ = 125oC
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
pF
Modified MOSFET
symbol showing the
internal inductances.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units T est Conditions
I
Continuous Source Current (Body Diode) — — -38 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ❋ — — -152 integral reverse p-n junction rectifier.
SM
V
Diode Forward V oltage — — -3.3 V Tj = 25oC, IS = -38A, VGS = 0V ➃
SD
t
Reverse Reco v ery Time — — 7 75 ns Tj = 25oC, IF = -38A, di/dt ≤ -100A/µs
rr
Q
Reverse Recovery Charge — — 5.0 µCV
RR
t
Fo r ward T urn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
Thermal Resistance
Parameter Min. Typ. Max. Units T est Conditions
R
thJC
R
thJ-PCB
Junction-to-Case — — 0.42
Junction-to-PC board — TBD — soldered to a copper-clad PC board
A
≤ -50V ➃
DD
+ LD.
S
K/W ➄
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