International Rectifier IRHNA7460SE Datasheet
Provisional Data Sheet No. PD-9.1399A
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REPETITIVE A V ALANCHE AND dv/dt RA TED
HEXFET
®
TRANSISTOR
SINGLE EVENT EFFECT (SEE) RAD HARD
500 Volt, 0.32Ω , (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure. Additionally , under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 10
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
tion within a few microseconds. Since the SEE process utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality and
reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits in space
and weapons environments.
5
Rads (Si) total dose. No compensation in
12
Rads (Si)/Sec, and return to normal opera-
Product Summary
Part Number BVDSS RDS(on) ID
IRHNA7460SE 500V 0.32Ω 20A
Features:
n Radiation Hardened up to 1 x 10
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Lightweight
IRHNA7460SE
N-CHANNEL
5
Rads (Si)
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 20
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 12
I
DM
PD @ TC = 25°C Max. Power Dissipation 30 0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 3.5
T
J
T
STG
Pre-Radiation
Parameter IRHNA7460SE Units
A
Pulsed Drain Current 80
Linear Derating Factor 2.4 W/K
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 500 mJ
Avalanche Current 20 A
Repetitive Avalanche Energy 30 mJ
V/ns
Operating Junction -55 to 150
Storage T emperature Range
Package Mounting Surface Temperature 300
Weight 3.3 (typical) g
(for 5 sec.)
o
C
IRHNA7460SE Device Pre-Radiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 1.0 mA
/∆TJT emperature Coefficient of Breakdown — 0.68 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
Static Drain-to-Source — — 0.32 VGS = 12V, ID =12A
On-State Resistance — — 0.36 Ω VGS = 12V, ID = 20A
Gate Threshold Voltage 2.5 — 4.5 V VDS = VGS, ID = 1.0 mA
Forward Transconductance 3.5 — — S ( )VDS > 15V, IDS = 12A
Zero Gate Voltage Drain Current — — 50 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
T otal Gate Charge — — 260 VGS =12V, ID = 20A
Gate-to-Source Charge — — 40 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 200
Turn-On Delay Time — — 45 VDD = 250V, ID =20A,
Rise Time — — 140 RG = 2.35Ω
Turn-Off Delay T ime — — 140
Fall Time — — 110
Internal Drain Inductance — 2.0 —
Internal Source Inductance — 6.5 —
Input Capacitance — 6400 — VGS = 0V, VDS = 25V
Output Capacitance — 1100 — f = 1.0 MHz
Reverse Transfer Capacitance — 375 —
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 20 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) —— 80 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 20A, VGS = 0V
SD
t
Reverse Recovery T ime — — 1200 ns Tj = 25°C, IF = 20A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 16 µCV
RR
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
R
thJ-PCB
Junction-to-Case — — 0.42
Junction-to-PC Board — TBD —
A
≤ 50V
DD
K/W
Soldered to a copper-clad PC board
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