International Rectifier IRHNA7360SE Datasheet
Provisional Data Sheet No. PD-9.1398A
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REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET
®
TRANSISTOR
SINGLE EVENT EFFECT (SEE) RAD HARD
400 Volt, 0.20
ΩΩ
Ω, (SEE) RAD HARD HEXFET
ΩΩ
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure. Additionally , under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality and
reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number BVDSS RDS(on) ID
IRHNA7360SE 400V 0.20Ω 24.3A
Features:
n Radiation Hardened up to 1 x 10
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Lightweight
IRHNA7360SE
N-CHANNEL
5
Rads (Si)
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 24.3
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 15.3
I
DM
PD @ TC = 25°C Max. Power Dissipation 300 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.0
T
J
T
STG
Pre-Radiation
Parameter IRHNA7360SE Units
A
Pulsed Drain Current 97.2
Linear Derating Factor 2.4 W/K
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 500 mJ
Avalanche Current 24.3 A
Repetitive Avalanche Energy 30 m J
V/ns
Operating Junction -55 to 150
Storage Temperature Range
Package Mounting Surface Temperature 300
Weight 3.3 (typical) g
(for 5 sec.)
o
C
IRHNA7360SE Device Pre-Radiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 400 — — V VGS = 0V, ID = 1.0 mA
/∆TJTemperature Coefficient of Breakdown — 0.45 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
Static Drain-to-Source — — 0.20 VGS = 12V, ID =15.3A
On-State Resistance — — 0.21 Ω VGS = 12V, ID = 24.3A
Gate Threshold Voltage 2.5 — 4.5 V VDS = VGS, ID = 1.0 mA
Forward Transconductance 4.75 — — S ( )VDS > 15V, IDS = 15.3A
Zero Gate Voltage Drain Current — — 50 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 180 VGS =12V, ID = 24.3A
Gate-to-Source Charge — — 75 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 100
Turn-On Delay Time — — 35 VDD = 200V , ID =24.3A,
Rise Time — — 100 RG = 2.35Ω
Turn-Off Delay Time — — 100
Fall Time — — 100
Internal Drain Inductance — 2.0 —
Internal Source Inductance — 6.5 —
Input Capacitance — 7500 — VGS = 0V, VDS = 25V
Output Capacitance — 1200 — f = 1.0 MHz
Reverse Transfer Capacitance — 500 —
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 24.3 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) — — 97.2 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 1.4 V Tj = 25°C, IS = 24.3A, VGS = 0V
SD
t
Reverse Recovery Time — — 750 ns Tj = 25°C, IF = 24.3A, di/dt ≤ 100A/µs
rr
QRRReverse Recovery Charge — — 16 µCV
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
R
thJ-PCB
Junction-to-Case — — 0.42
Junction-to-PC Board — TBD —
A
≤ 50V
DD
K/W
Soldered to a copper-clad PC board
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