International Rectifier IRHNA7264SE Datasheet
HEXFET
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®
TRANSISTOR
SINGLE EVENT EFFECT (SEE) RAD HARD
Provisional Data Sheet No. PD-9.1432A
IRHNA7264SEREPETITIVE AVALANCHE AND dv/dt RATED
N-CHANNEL
250Volt, 0.110
ΩΩ
Ω, (SEE) RAD HARD HEXFET
ΩΩ
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure.
Additionally , under identical pre- and post-radiation test
conditions, International Rectifier’s RAD HARD HEXFET s
retain identical electrical specifications up to 1 x 10
Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of
surviving transient ionization pulses as high as 1 x 10
Rads (Si)/Sec, and return to normal operation within a
few microseconds. Since the SEE process utilizes International Rectifier’s patented HEXFET technology , the
user can expect the highest quality and reliability in the
industry .
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits in space
and weapons environments.
Product Summary
Absolute Maximum Ratings
Parameter IRHNA7264SE Units
ID @ VGS = 12V, TC = 25oC Continuous Drain Current 34
ID @ VGS = 12V, TC = 100oC Continuous Drain Current 21
I
DM
PD @ TC = 25oC Max. Power Dissipation 30 0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 4.0
T
J
T
STG
Pulsed Drain Current ➀ 136
Linear Derating Factor 2.4 W/K➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 500 mJ
Avalanche Current ➀ 34 A
Repetitive Avalanche Energy ➀ 30 mJ
Operating Junction -55 to 150
Storage T emperature Range
Package Mounting Surface Temperature 300
Weight 3.3 (typical) g
Part Number BVDSS RDS(on) ID
IRHNA7264SE 250V 0.110Ω 34A
5
Features:
■ Radiation Hardened up to 1 x 10
■ Single Event Burnout (SEB) Hardened
12
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ Neutron T olerant
■ Identical Pre- and Post-Electrical Test Conditions
■ Repetitive Avalanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Lightweight
5
Rads (Si)
Pre-Radiation
(for 5 sec.)
A
V/ns
o
C
IRHNA7264SE Device Pre-Radiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. T yp. Max. Units T est Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 250 — — V VGS = 0V, ID = 1.0 mA
/∆TJT emperature Coefficient of Breakdown — — — V/
Voltage
Static Drain-to-Source — — 0.110 VGS = 12V, ID =24A
On-State Resistance — — 0.123 Ω VGS = 12V, ID = 34A
Gate Threshold Voltage 2.5 — 4.5 V VDS = VGS, ID = 1.0 mA
Forward Transconductance 4 — — S ( )VDS > 15V, IDS = 21A ➃
Zero Gate Voltage Drain Current — — 50 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
T otal Gate Charge — — 185 VGS =12V, ID = 34A
Gate-to-Source Charge — — 55 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 180
Turn-On Delay Time — — 35 VDD = 125V, ID =34A,
Rise Time — — 20 0 RG = 2.35Ω
Turn-Off Delay T ime — — 14 0
Fall Time — — 75
Internal Drain Inductance — 2.0 —
Internal Source Inductance — 6.5 —
Input Capacitance — 7800 — VGS = 0V, VDS = 25V
Output Capacitance — 1250 — f = 1.0 MHz
Reverse Transfer Capacitance — 550 —
o
C Reference to 25°C, ID = 1.0 mA
Ω
µA
VGS = 0V, TJ = 125°C
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
pF
Modified MOSFET
symbol showing the
internal inductances.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 34 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ➀ — — 136 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 1.4 V Tj = 25°C, IS = 34A, VGS = 0V ➃
SD
t
Reverse Recovery T ime — — 87 5 ns Tj = 25°C, IF = 34A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 12 µCV
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by L
on
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
R
thJ-PCB
Junction-to-Case — — 0.42
Junction-to-PC board — TBD — soldered to a copper-clad PC board
A
K/W ➄
≤ 50V ➃
DD
+ LD.
S
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