International Rectifier IRHNA7160, IRHNA8160 Datasheet
Provisional Data Sheet No. PD-9.1396
Next Data SheetIndex
Previous Datasheet
To Order
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
100 V olt, 0.045
International Rectifier’s RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required. These de vices are also
capable of surviving transient ionization pulses as high
as 1 x 10
tion within a few microseconds. Since the RAD HARD
process utilizes International Rectifier’s patented
HEXFET technology, the user can expect the highest
quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as
voltage control, very fast s witching, ease of par alleling
and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inver ters, choppers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
12
Rads (Si)/Sec, and return to normal opera-
®
TRANSIST OR
ΩΩ
Ω, MEGA RAD HARD HEXFET
ΩΩ
Product Summary
Part Number BVDSS RDS(on) ID
IRHNA7160 100V 0.045Ω 51A
IRHNA8160 100V 0.045Ω 51A
Features:
n Radiation Hardened up to 1 x 10
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Lightweight
IRHNA7160
IRHNA8160
N-CHANNEL
MEGA RAD HARD
6
Rads (Si)
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 51
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 32.5
I
DM
PD @ TC = 25°C Max. Power Dissipation 300 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.5
T
J
T
STG
Pre-Radiation
Parameter IRHNA7160, IRHNA8160 Units
A
Pulsed Drain Current 204
Linear Derating Factor 2.0 W/K
Gate-to-Source V oltage ±20 V
Single Pulse Avalanche Energy 500 mJ
Avalanche Current 51 A
Repetitive Avalanche Energy 30 mJ
V/ns
Operating Junction -55 to 150
Storage Temperature Range
Package Mounting Surface Temperature 300
Weight 3.3 (typical) g
(for 5 sec.)
o
C
IRHNA7160, IRHNA8160 Devices Pre-Radiation
Next Data SheetIndex
Previous Datasheet
To Order
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0 mA
/∆TJTemperature Coefficient of Breakdown — 0.13 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
Static Drain-to-Source — — 0.045 VGS = 12V, ID =32.5 A
On-State Resistance — — 0.050 Ω VGS = 12V, ID = 51A
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0 mA
Forw ard Tr ansconductance 12 — — S ( )VDS > 15V, IDS = 32.5A
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 224 VGS =12V, ID = 51A
Gate-to-Source Charge — — 50 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 90
Tur n-On Delay Time — — 65 VDD = 50V, ID =51 A,
Rise Time — — 265 RG = 2.35Ω
Turn-Off Delay Time — — 240
Fall Time — — 180
Internal Drain Inductance — 8.7 —
Internal Source Inductance — 8.7 —
Input Capacitance — 6000 — VGS = 0V, VDS = 25V
Output Capacitance — 1700 — f = 1.0 MHz
Reverse Transfer Capacitance — 280 —
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 51 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) — — 204 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 51A, VGS = 0V
SD
t
Reverse Recovery Time — — 570 ns Tj = 25°C, IF = 51A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 5.8 µCV
RR
t
Forward T urn-On Time
on
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
R
thJ-PCB
Junction-to-Case — — 0.42
Junction-to-PC board — TBD — soldered to a copper-clad PC board
A
K/W
≤ 50V
DD
Loading...