International Rectifier IRHNA7064, IRHNA8064 Datasheet
Provisional Data Sheet No. PD-9.1416
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REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET
60 Volt, 0.015
International Rectifier’s RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure. Additionally , under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
tion within a few microseconds. Since the RAD HARD
process utilizes International Rectifier’s patented
HEXFET technology, the user can expect the highest
quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFET s, such as voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
12
Rads (Si)/Sec, and return to normal opera-
®
TRANSISTOR
ΩΩ
Ω, MEGA RAD HARD HEXFET
ΩΩ
Product Summary
Part Number BVDSS RDS(on) ID
IRHNA7064 60V 0.015Ω 75A*
IRHNA8064 60V 0.015Ω 75A*
Features:
■ Radiation Hardened up to 1 x 10
■ Single Event Burnout (SEB) Hardened
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ Neutron Tolerant
■ Identical Pre- and Post-Electrical Test Conditions
■ Repetitive Avalanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Lightweight
IRHNA7064
IRHNA8064
N-CHANNEL
MEGA RAD HARD
6
Rads (Si)
Absolute Maximum Ratings
Pre-Radiation
Parameter IRHNA7064, IRHNA8064 Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 75*
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 56
I
DM
PD @ TC = 25°C Max. Power Dissipation 300 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 4.5
T
J
T
STG
Notes: See page 4 *Current is limited by pin diameter
Pulsed Drain Current ➀ 356
Linear Derating Factor 2.0 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 500 mJ
Avalanche Current ➀ 75* A
Repetitive Avalanche Energy ➀ 30 m J
Operating Junction -55 to 150
Storage Temperature Range -55 to150
Package Mounting Surface Temperature 300
Weight 3.3 (typical) g
(for 5 sec.)
A
V/ns
o
C
IRHNA7064, IRHNA8064 Devices Pre-Radiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 60 — — V VGS = 0V, ID = 1.0 mA
/∆TJTemperature Coefficient of Breakdown — 0.048 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
Static Drain-to-Source — — 0.015 VGS = 12V, ID = 56A
On-State Resistance — — 0.018 Ω VGS = 12V, ID = 75A
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0 mA
Forward Transconductance 18 — — S ( )VDS > 15V, IDS = 56A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 260 VGS =12V, ID = 75A
Gate-to-Source Charge — — 60 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 86
Turn-On Delay Time — — 27 VDD = 30V, ID = 75A,
Rise Time — — 120 RG = 2.35Ω
Turn-Off Delay Time — — 76
Fall Time — — 93
Internal Drain Inductance — 8.7 —
Internal Source Inductance — 8.7 —
Input Capacitance — 7400 — VGS = 0V, VDS = 25V
Output Capacitance — 3200 — f = 1.0 MHz
Reverse Transfer Capacitance — 540 —
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 35 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ➀ — — 284 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 3.0 V Tj = 25°C, IS = 75A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 220 ns Tj = 25°C, IF = 75A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 1.1 µCV
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
R
thJ-PCB
Notes: See page 4
Junction-to-Case — — 0.42
Junction-to-PC board — TBD — soldered to a copper-clad PC board
K/W➄
A
≤ 50V ➃
DD
+ LD.
S
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