International Rectifier IRHN8130, IRHN7130 Datasheet

Provisional Data Sheet No. PD-9.821A

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REPETITIVE A V ALANCHE AND dv/dt RATED

HEXFET

100 Volt, 0.18

International Rectifier’s MEGA RAD HARD technology
HEXFETs demonstrate excellent threshold voltage sta­bility and breakdown voltage stability at total radiation
doses as high as 1 x 10
and post-radiation test conditions, International Rectifier’s
RAD HARD HEXFETs retain identical electrical specifi­cations up to 1 x 10
(Si) total dose, under the same pre-dose conditions, only
minor shifts in the electrical specifications are observed
and are so specified in table 1. No compensation in gate
drive circuitry is required. In addition, these devices are
capable of surviving transient ionization pulses as high
as 1 x 10
within a few microseconds. Single Event Effect (SEE)
testing of International Rectifier RAD HARD HEXFETs
has demonstrated virtual immunity to SEE failure. Since
the MEGA RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.

RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt­age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.

They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, au­dio amplifiers and high-energy pulse circuits in space and
weapons environments.

12

Rads (Si)/Sec, and return to normal operation

®

TRANSISTOR

ΩΩ

Ω, MEGA RAD HARD HEXFET

ΩΩ

6

Rads (Si). Under identical pre-

5

Rads (Si) total dose. At 1 x 106 Rads

Absolute Maximum Ratings

Parameter IRHN7130, IRHN8130 Units

ID @ VGS = 12V , TC = 25°C Continuous Drain Current 14

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 9.0

I

DM

PD @ TC = 25°C Max. Power Dissipation 75 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ 5.5 (see fig. 30)

T

J

T

STG

Pulsed Drain Current ➀ 56

Linear Derating Factor 0.60 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 160 (see fig. 29) mJ
Avalanche Current ➀ 14 A
Repetitive Avalanche Energy ➀ 7.5 mJ

Operating Junction -55 to 150
Storage Temperature Range

Package Mounting Surface Temperature 300
Weight 2.6 (typical) g

IRHN7130
IRHN8130

N-CHANNEL

MEGA RAD HARD

Product Summary

Part Number BVDSS RDS(on) ID

IRHN7130 100V 0.18Ω 14
IRHN8130 100V 0.18Ω 14

Features:

■ Radiation Hardened up to 1 x 10

■ Single Event Burnout (SEB) Hardened

■ Single Event Gate Rupture (SEGR) Hardened

■ Gamma Dot (Flash X-Ray) Hardened

■ Neutron Tolerant

■ Identical Pre- and Post-Electrical Test Conditions

■ Repetitive Avalanche Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Surface Mount

■ Light-weight

(for 5 sec.)

6

Rads (Si)

Pre-Radiation

A

V/ns

o

C

IRHN7130, IRHN8130 Devices Pre-Radiation

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min. Typ. Max. Units Test Conditions

BV

DSS

∆BV
R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

DSS

Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0 mA

/∆TJTemperature Coefficient of Breakdown — 0.12 — V/°C Reference to 25°C, ID = 1.0 mA

Voltage
Static Drain-to-Source — — 0.18 VGS = 12V, ID = 9A
On-State Resistance — — 0.20 Ω VGS = 12V, ID = 14A
Gate Threshold V oltage 2.0 — 4.0 V VDS = VGS, ID = 1.0 mA
Forward Transconductance 3.3 — — S ( )VDS > 15V, IDS = 9A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V

— — 250 VDS = 0.8 x Max Rating

Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 45 VGS =12V, ID = 14A
Gate-to-Source Charge — — 11 VDS = Max. Rating x 0.5
Gate-to-Drain (‘Miller’) Charge — — 17
Turn-On Delay Time — — 30 VDD = 50V, ID = 14A,
Rise Time — — 120 RG = 7.5Ω
Turn-Off Delay Time — — 49
Fall Time — — 64
Internal Drain Inductance — 2.0 —

Internal Source Inductance — 4.1 —

Input Capacitance — 1100 — VGS = 0V, VDS = 25V
Output Capacitance — 310 — f = 1.0 MHz
Reverse Transfer Capacitance — 55 — (see figure 22)

Ω

µA

nA

nC

ns

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

nH

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

pF

VGS = 0V, TJ = 125°C

(see figure 23 and 31)

(see figure 28)

Modified MOSFET
symbol showing the
internal inductances.

➃

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

I

Continuous Source Current (Body Diode) — — 14 Modified MOSFET symbol showing the

S

I

Pulse Source Current (Body Diode) ➀ ——56 integral reverse p-n junction rectifier.

SM

V

Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 14A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 370 n s Tj = 25°C, IF = 14A, di/dt ≤ 100A/µs

rr

Q

Reverse Recovery Charge — — 3.5 µ CV

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by L

on

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

R

thJC

R

thJ-PCB

Junction-to-Case — — 1.67
Junction-to-PC board — TBD — soldered to a copper-clad PC board

A

≤ 50V ➃

DD

+ LD.

S

K/W➄

IRHN7130, IRHN8130 Devices Radiation Characteristics

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Radiation Performance of Mega Rad Hard HEXFETs

International Rectifier Radiation Hardened HEX-FETs
are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.

Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and
figure 8a and a V

bias condition equal to 80%

DSS

of the device rated voltage per note 7 and figure
8b. Pre- and post-radiation limits of the devices irra­diated to 1 x 10

5

Rads (Si) are identical and are pre­sented in Table 1, column 1, IRHN7130. Device
performance limits at a post radiation level of 1 x

6

10

Rads (Si) are presented in Table 1, column 2,
IRHN8130. The values in Table 1 will be met for ei­ther of the two low dose rate test circuits that are
used. Typical delta curves showing radiation re­sponse appear in figures 1 through 5. Typical post­radiation curves appear in figures 10 through 17.

Table 1. Low Dose Rate ➅ ➆ IRHN7130 IRHN8130

100K Rads (Si) 1000K Rads (Si) Units Test Conditions ➉

min. max. min. max.

BV
V

GS(th)

I

GSS

I

GSS

I

DSS

R

DS(on)1

V

SD

DSS

Parameter

Drain-to-Source Breakdown Voltage 100 — 100 —
Gate Threshold Voltage ➃ 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0 mA
Gate-to-Source Leakage Forward — 100 — 100
Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20V
Zero Gate Voltage Drain Current — 25 — 25 µAVDS = 0.8 x Max Rating, VGS = 0
Static Drain-to-Source ➃ — 0.18 — 0.24 Ω VGS = 12V, ID = 9A
On-State Resistance One
Diode Forward Voltage ➃ — 1.8 — 1.8 V TC = 25°C, IS = 14A,VGS = 0V

Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10

5

Rads (Si), no change in limits are specified in DC
parameters. At a radiation level of 1 x10

6

Rads (Si),
leakage remains low and the device is usable with
no change in drive circuitry required.

High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10

12

Rads
(Si)/Sec. Photocurrent and transient voltage wave­forms are shown in figure 7, and the recommended
test circuit to be used is shown in figure 9.

International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. The ef­fects on bulk silicon of the type used by Interna­tional Rectifier on RAD HARD HEXFETs are shown
in figure 6. Single Event Effects characterization is
shown in Table 3.

V

nA

VGS = 0V, ID = 1.0 mA

VGS = +20V

Table 2. High Dose Rate ➇

Parameter Min. Typ Max. Min.Typ. Max. Units Test Conditions

V
I

di/dt — — 1000 — — 200 A/µsec Rate of rise of photo-current
L

Drain-to-Source Voltage — — 80 — — 80 V Applied drain-to-source voltage

DSS

PP

1

Table 3. Single Event Effects ➈

Parameter Typ. Units Ion

BV

DSS

100 V Ni 28 1 x 10

1011 Rads (Si)/sec 1012 Rads (Si)/sec

— 100 — — 100 — A Peak radiation induced photo-current

0.1 — — 0.5 — — µH Circuit inductance required to limit di/dt

during gamma-dot

LET (Si) Fluence Range VDS Bias VGS Bias

(MeV/mg/cm

2

) (ions/cm2)(µm) (V) (V)

5

~41 100 -5

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Post-Radiation

VGS = 12V

ID = 9.0A

Figure 1. – T ypical Response of Gate Threshold Voltage

Figure 3. – Typical Response of Transconductance

Vs. T otal Dose Exposure.

VDS ≥ 15V

ID = 9.0A

Vs. T otal Dose Exposure.

Figure 2. – Typical Response of On-State Resistance

Vs. T otal Dose Exposure.

Figure 4. – Typical Response of Drain-to-Source

Breakdown Vs. Total Dose Exposure.

IRHN7130, IRHN8130 Devices

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Post-Radiation

Figure 5. – Typical Zero Gate Voltage Drain Current

Vs. T otal Dose Exposure.

Figure 7. – Typical T ransient Response of

Rad Hard HEXFET During 1 x 10

Rad (Si)/Sec Exposure.

Figure 6. – Typical On-State Resistance Vs.

Figure 8a – Gate Stress of

V

Equals 12

GSS

Volts During Radiation.

12

Figure 8b – V

Equals 80% of B

During Radiation.

DSS

Stress

VDSS

Neutron Fluence Level

Figure 9. – High Dose Rate (Gamma Dot)

Test Circuit